Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.     

广义Foster定理

利用Ｍａｘｗｅｌｌ方程组导出了适用于有耗网络的广义Ｆｏｓｔｅｒ定理，得到了一些有关电抗斜率以及Ｑ值的有用公式及结论。     

One-stage sternal stenting with homograft bone after cardiac operation in pediatric patients

Low cardiac output after open heart operations in neonates and infants carries a high mortality. Delayed sternal closure may be life-saving but may prolong hospital stay and increase costs. To circumvent these issues, we shaped homograft bone and interposed it between the sternal edges to allow primary wound closure in 2 pediatric patients. Midterm results are satisfactory.     

Synthesis and Properties of the Bi-Based Superconducting Powder Prepared by the Pechini Process

Bi-based superconductors are of great interest in high-temperature superconductors. We describe what is believed to be the first synthesis of these materials using the Pechini process, a low-temperature synthetic method that often yields inorganic oxide of excellent phase purity and well-controlled stoichiometry. Using this process, it has been possible to synthesize phase-pure Bi-2223 phase by calcining the appropriate polymeric precursors in air at 800°C for several hours. The superconductivity studies show that the Pechini-synthesized materials appear to offer high-quality performance.     

火焰动画快速模拟的新方法

针对火焰动画难以快速建模和绘制的问题,提出了完全利用GPU过程化生成火焰动画的高效算法。先用建模工具在预处理阶段构建一个由平面正方形组成的三维模型,在绘制阶段通过GPU编程对这些方形进行Billboard方式的变换,并用一些简单公式对他们的运动方式、大小和颜色来用过程化方式进行控制,最后通过alpha混合得到最终结果。算法完全在GPU里实现,能满足实时的绘制要求。     

A deep multi-source adaptation transfer network for cross-subject electroencephalogram emotion recognition

Neural Computing and Applications - In real-world application of affective brain–computer interface (aBCI), individual differences across subjects and non-stationary characteristics of...     

基于参数空间法的飞行器再入控制研究

针对空天飞行器再入段环境变化剧烈、气动参数变化范围大的特点,采用参数空间方法来设计其控制系统;首先建立飞行器控制系统的数学模型,鉴于飞行器再入过程中对攻角有着严格的要求,设计了以攻角反馈为被控信号的三回路自动驾驶仪结构,然后根据参数空间方法求出对应的控制器参数,最后基于Matlab/Simulink的非线性仿真表明,所设计的控制系统在大气密度偏差±30%、气动力/力矩系数各偏差±20%的组合偏差情况下仍具有较好的鲁棒稳定性和跟踪性能。     

Delay‐dependent stability for Markovian genetic regulatory networks with time‐varying delays

This paper is concerned with the problem of stochastic stability analysis for a class of genetic regulatory networks with Markovian jump parameters and time‐varying delays. A delay‐dependent stability criterion is derived by using a novel mode‐dependent Lyapunov functional. The derived stability criterion is expressed in terms of linear matrix inequalities and is less conservative than the existing ones in the literature. A numerical example is provided to demonstrate the effectiveness of the proposed stability criterion. Copyright © 2011 John Wiley and Sons Asia Pte Ltd and Chinese Automatic Control Society     

Growth characteristics of β-SiC by chemical vapour deposition

A twin-plane re-entrant corner effect (TPRE) in growth of chemical vapour deposited (CVD) -SiC is described by the film and particles of gas-phase homogeneous nucleation. The structural morphology has been characterized by scanning electron microscopy and transmission electron microscopy. Morphological characteristics of the deposited crystals, such as triangularity, hexagons or facets have been explained in terms of the re-entrant corner effect at twin junctions, which were proposed as preferential growth sites for perfect crystals. For real deposits, screw dislocations and/or the re-entrant corner effect are not expected to be compatible. The majority of chemical vapour deposited SiC crystals have a high defect density comprised of {111} twins and dislocations associated with the process variables. Infrared transmission spectra and electron spectroscopy of chemical analysis indicated that the major chemical bonds of CVD -SiC were Si-C and C-H bonds. The positions of the 1s or 2p corelevel peaks for deposits are described.