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991.
对比了熔体快淬合金和常规熔铸合金Zr0.9Ti0.1(Ni,Co,Mn,V)2.1的微结构和电化学性能. XRD分析表明: 熔体快淬合金在退火前后的晶体结构与铸态合金一样,都为面心立方结构,由Laves C15主相组成;随快淬速度的增加,快淬合金中的非晶成份增多. 电化学测试表明:快淬合金有较好的活化性能,经6~8次循环即可完全活化,但其最大放电容量较低,小于270 mAh/g;而退火后的快淬合金需经30次循环才能完全活化,其最大放电容量皆为340 mAh/g左右,高于铸态合金和退火前的快淬合金;在电流密度为300 mA/g下充放电循环,发现退火后的快淬合金循环稳定性明显高于铸态合金电极,并且随快淬速度增加,循环稳定性越好. 相似文献
992.
993.
994.
Quan Li Pengfei Yan Peng Chen Guangfeng Hou Guangming Li 《Journal of Inorganic and Organometallic Polymers and Materials》2012,22(5):1174-1181
Four N,N′-bis(salicylidene)-1,2-(phenylene-ediamine) (H2L) trinuclear lanthanide complexes, namely, [Ln3L3(CH3OH)2(NO3)3]·(CH2Cl2)·(CH3OH)·(H2O)2 [Ln = Tb (1), Ho (2), Er (3) and Lu (4)], have been isolated by the reactions of H2L and Ln(NO3)3·6H2O. And one N,N′-bis(salicylidene)-1,2-(phenylene-ediamine) dinuclear neodymium complex [Nd2L3(CH3OH)] (5) has been harvested from the reaction of H2L with Nd(OAc)3·4H2O. X-ray crystallographic analysis reveals that complexes 1?4 are of triple-decker trinuclear sandwich structure, while complex 5 is of a triple-decker dinuclear sandwich structure, expanding upon the recent reports of the multinuclear pure lanthanide complexes. 相似文献
995.
996.
研究了钡锶锑锰等离子掺杂对锆钛酸铅(PZT)系压电陶瓷的介电、压电性能和体积密度的影响。实验结果表明:对于Pb0.95Ba0.03Sr0.02(Zr1-yTiy)O3+xwt%MnSb2O6(PBSZTMS),在x=1.5、Zr/Ti=52/48附近获得了优越的压电活性。对于Pb0.95Ba0.03Sr0.02(MnSb2O6)x/3(Zr54Ti46)1-xO3(PBSMSZT),综合性能较好的组成点出现在x=0.05处。对于PbaBabSrc(MnSb2O6)x/3(Zr1-yTiy)1-xO3+zwt%MnSb2O6系列配方,发现Sr2+和Ba2+的共同添加会使样品致密度降低,介电常数、介质损耗和压电常数增加;当a=1,b=0,c=0,x=0.03,y=0.48,z=0.76时,获得了综合性能较好的陶瓷材料,有望应用于大功率超声压电马达器件领域。 相似文献
997.
Oil‐absorption resins are considered one of the effective materials to separate organic chemical compounds from oily water. In this work, well‐defined high oil‐absorption resins of poly(methyl methacrylate–butyl methacrylate) grafted onto silica gel were prepared by surface‐initiated atom transfer radical polymerization using activators regenerated by electron transfer mediated by FeCl3/iminodiacetic acid. The grafted polymers were grown in a controlled manner. By considering the effect of different polymerization conditions, we prepared novel high oil‐absorption resins. The chemical structures of the resins were determined by Fourier transform IR spectroscopy. SEM and TGA were also used to characterize the resins. It was found that the resins had good heat‐resistant quality, higher oil absorbency and better oil retention and regeneration properties. The resins can absorb 31.2 g g?1 for tricholoromethane and 23.3 g g?1 for toluene. Copyright © 2012 Society of Chemical Industry 相似文献
998.
Chitosan, a biocompatible, biodegradable, nontoxic polymer, is prepared from chitin, which is the second most naturally occurring biopolymer after cellulose. Schiff base of chitosan, sorbyl chitosan, and p‐aminobenzoyl chitosan were synthesized working under high‐intensity ultrasound and their antimicrobial properties were analyzed against Escherichia coli, Staphylococcus aureus, and Aspergillus niger. The structures of the derivatives were characterized by FTIR spectroscopy and elemental analysis. The results of antimicrobial activities indicated that the antimicrobial activities of the derivatives increased with increasing the concentration. The antibacterial activity of schiff base of chitosan against E. coli was stronger, while acylated chitosan had better inhiting effect on S. aureus than others. It was also found that the antifungal activities of the derivatives were stronger than that of chitosan, and schiff base of chitosan was obviously superior to acylated chitosan. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2012 相似文献
999.
He Hui Sun Feng Yun Guo Deng Yue Li Lu Wang Dong Bo Wang Lian Cheng Zhao 《Nanoscale research letters》2012,7(1):649
High Al content AlxGa1−xN/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates. Atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. High-resolution X-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the AlGaN/GaN MQW layer could be achieved when the AlGaN interlayer is inserted. The ISB absorption with a peak at 3.7 μm was demonstrated in MQW films with AlGaN interlayer. However, we have not observed the infrared absorption in MQW films with GaN/AlN SL interlayer. It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer. 相似文献
1000.
Ning Han Jared J Hou Fengyun Wang SenPo Yip Hao Lin Ming Fang Fei Xiu Xiaoling Shi TakFu Hung Johnny C Ho 《Nanoscale research letters》2012,7(1):632
One of the challenges to prepare high-performance and uniform III-V semiconductor nanowires (NWs) is to control the crystal structure in large-scale. A mixed crystal phase is usually observed due to the small surface energy difference between the cubic zincblende (ZB) and hexagonal wurtzite (WZ) structures, especially on non-crystalline substrates. Here, utilizing Au film as thin as 0.1 nm as the catalyst, we successfully demonstrate the large-scale synthesis of pure-phase WZ GaAs NWs on amorphous SiO2/Si substrates. The obtained NWs are smooth, uniform with a high aspect ratio, and have a narrow diameter distribution of 9.5 ± 1.4 nm. The WZ structure is verified by crystallographic investigations, and the corresponding electronic bandgap is also determined to be approximately 1.62 eV by the reflectance measurement. The formation mechanism of WZ NWs is mainly attributed to the ultra-small NW diameter and the very narrow diameter distribution associated, where the WZ phase is more thermodynamically stable compared to the ZB structure. After configured as NW field-effect-transistors, a high ION/IOFF ratio of 104 − 105 is obtained, operating in the enhancement device mode. The preparation technology and good uniform performance here have illustrated a great promise for the large-scale synthesis of pure phase NWs for electronic and optical applications. 相似文献