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991.
对比了熔体快淬合金和常规熔铸合金Zr0.9Ti0.1(Ni,Co,Mn,V)2.1的微结构和电化学性能. XRD分析表明: 熔体快淬合金在退火前后的晶体结构与铸态合金一样,都为面心立方结构,由Laves C15主相组成;随快淬速度的增加,快淬合金中的非晶成份增多. 电化学测试表明:快淬合金有较好的活化性能,经6~8次循环即可完全活化,但其最大放电容量较低,小于270 mAh/g;而退火后的快淬合金需经30次循环才能完全活化,其最大放电容量皆为340 mAh/g左右,高于铸态合金和退火前的快淬合金;在电流密度为300 mA/g下充放电循环,发现退火后的快淬合金循环稳定性明显高于铸态合金电极,并且随快淬速度增加,循环稳定性越好.  相似文献   
992.
本文基于虚拟样机技术,以沙滩车机械锁止式差速器为例,对其特殊工况时差速器锁止机构的自锁与解锁功能进行了运动学仿真分析,分析结果对改善机械传动系统动力学性能和关键零部件设计有一定的指导作用,为其主要部位的齿轮载荷获取以及疲劳寿命预测提供了新的研究方法,同时为沙滩车差速器的优化设计提供了依据。  相似文献   
993.
超声相控阵检测技术研究进展   总被引:1,自引:0,他引:1  
超声相控阵检测技术的特点使它成为重要的无损检测方法,本文综述了国内外超声波检测技术的发展和和研究现状,超声相控阵检测技术的优缺点和关键技术,总结了其发展、使用和研究中遇到的问题,指出了其有良好的发展前景。  相似文献   
994.
Four N,N′-bis(salicylidene)-1,2-(phenylene-ediamine) (H2L) trinuclear lanthanide complexes, namely, [Ln3L3(CH3OH)2(NO3)3]·(CH2Cl2)·(CH3OH)·(H2O)2 [Ln = Tb (1), Ho (2), Er (3) and Lu (4)], have been isolated by the reactions of H2L and Ln(NO3)3·6H2O. And one N,N′-bis(salicylidene)-1,2-(phenylene-ediamine) dinuclear neodymium complex [Nd2L3(CH3OH)] (5) has been harvested from the reaction of H2L with Nd(OAc)3·4H2O. X-ray crystallographic analysis reveals that complexes 1?4 are of triple-decker trinuclear sandwich structure, while complex 5 is of a triple-decker dinuclear sandwich structure, expanding upon the recent reports of the multinuclear pure lanthanide complexes.  相似文献   
995.
根据曼尼希反应的基本原理,设计并制备了一种水溶性的曼尼希碱缓蚀剂(MNX-B)。采用红外和质谱测试,分析了MNX-B的分子结构特征。采用极化曲线和电化学阻抗谱测试,研究了MNX-B及其氯化铈CeCl3对海水中20#钢的缓蚀作用机理。研究表明,MNX-B为吸附成膜、以抑制20#钢海水腐蚀的阳极反应为主的混合控制型缓蚀剂,单剂的缓蚀作用较为有限;MNX-B与阴极沉淀型缓蚀剂CeCl3可产生明显的协同增效作用,共同抑制20#钢海水腐蚀。  相似文献   
996.
研究了钡锶锑锰等离子掺杂对锆钛酸铅(PZT)系压电陶瓷的介电、压电性能和体积密度的影响。实验结果表明:对于Pb0.95Ba0.03Sr0.02(Zr1-yTiy)O3+xwt%MnSb2O6(PBSZTMS),在x=1.5、Zr/Ti=52/48附近获得了优越的压电活性。对于Pb0.95Ba0.03Sr0.02(MnSb2O6)x/3(Zr54Ti46)1-xO3(PBSMSZT),综合性能较好的组成点出现在x=0.05处。对于PbaBabSrc(MnSb2O6)x/3(Zr1-yTiy)1-xO3+zwt%MnSb2O6系列配方,发现Sr2+和Ba2+的共同添加会使样品致密度降低,介电常数、介质损耗和压电常数增加;当a=1,b=0,c=0,x=0.03,y=0.48,z=0.76时,获得了综合性能较好的陶瓷材料,有望应用于大功率超声压电马达器件领域。  相似文献   
997.
Oil‐absorption resins are considered one of the effective materials to separate organic chemical compounds from oily water. In this work, well‐defined high oil‐absorption resins of poly(methyl methacrylate–butyl methacrylate) grafted onto silica gel were prepared by surface‐initiated atom transfer radical polymerization using activators regenerated by electron transfer mediated by FeCl3/iminodiacetic acid. The grafted polymers were grown in a controlled manner. By considering the effect of different polymerization conditions, we prepared novel high oil‐absorption resins. The chemical structures of the resins were determined by Fourier transform IR spectroscopy. SEM and TGA were also used to characterize the resins. It was found that the resins had good heat‐resistant quality, higher oil absorbency and better oil retention and regeneration properties. The resins can absorb 31.2 g g?1 for tricholoromethane and 23.3 g g?1 for toluene. Copyright © 2012 Society of Chemical Industry  相似文献   
998.
Chitosan, a biocompatible, biodegradable, nontoxic polymer, is prepared from chitin, which is the second most naturally occurring biopolymer after cellulose. Schiff base of chitosan, sorbyl chitosan, and p‐aminobenzoyl chitosan were synthesized working under high‐intensity ultrasound and their antimicrobial properties were analyzed against Escherichia coli, Staphylococcus aureus, and Aspergillus niger. The structures of the derivatives were characterized by FTIR spectroscopy and elemental analysis. The results of antimicrobial activities indicated that the antimicrobial activities of the derivatives increased with increasing the concentration. The antibacterial activity of schiff base of chitosan against E. coli was stronger, while acylated chitosan had better inhiting effect on S. aureus than others. It was also found that the antifungal activities of the derivatives were stronger than that of chitosan, and schiff base of chitosan was obviously superior to acylated chitosan. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2012  相似文献   
999.
High Al content AlxGa1−xN/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates. Atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. High-resolution X-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the AlGaN/GaN MQW layer could be achieved when the AlGaN interlayer is inserted. The ISB absorption with a peak at 3.7 μm was demonstrated in MQW films with AlGaN interlayer. However, we have not observed the infrared absorption in MQW films with GaN/AlN SL interlayer. It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer.  相似文献   
1000.
One of the challenges to prepare high-performance and uniform III-V semiconductor nanowires (NWs) is to control the crystal structure in large-scale. A mixed crystal phase is usually observed due to the small surface energy difference between the cubic zincblende (ZB) and hexagonal wurtzite (WZ) structures, especially on non-crystalline substrates. Here, utilizing Au film as thin as 0.1 nm as the catalyst, we successfully demonstrate the large-scale synthesis of pure-phase WZ GaAs NWs on amorphous SiO2/Si substrates. The obtained NWs are smooth, uniform with a high aspect ratio, and have a narrow diameter distribution of 9.5 ± 1.4 nm. The WZ structure is verified by crystallographic investigations, and the corresponding electronic bandgap is also determined to be approximately 1.62 eV by the reflectance measurement. The formation mechanism of WZ NWs is mainly attributed to the ultra-small NW diameter and the very narrow diameter distribution associated, where the WZ phase is more thermodynamically stable compared to the ZB structure. After configured as NW field-effect-transistors, a high ION/IOFF ratio of 104 − 105 is obtained, operating in the enhancement device mode. The preparation technology and good uniform performance here have illustrated a great promise for the large-scale synthesis of pure phase NWs for electronic and optical applications.  相似文献   
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