45~#钢宽带激光淬火研究

:本文利用宽带CO2 激光束 ,对 45 #钢表面进行宽带淬火 ,获得单道淬火宽度 10mm以上。淬硬层硬度达 5 0 0～ 6 30Hv0 3是非淬硬层的 2～ 2 5倍 ,深度达 1 9～ 2 .0mm。激光淬硬层分为表面过热区、均匀相变区和过渡区三个区域 ,所对应的金相组织分别为高碳马氏体、隐晶马氏体和混和马氏体。宽带激光淬火造成的组织细化和大量高碳马氏体的形成是硬度提高的主要原因。在扫描速度v =4mm/s和离焦量 18mm条件下 ,45 #钢宽带激光淬火的最佳功率约为 3 0～ 3 3kW。     

熔融石英的热及电场诱导机理

详细分析了熔融石英样品经热及电场诱导后 ,建立二阶极化率的机理。该机理表明 ,二阶极化率是由样品耗尽区中偶极子的定向和三阶极化率经强静电场作用共同形成的。在一般条件下诱导 ,前者是主要因素 ;在较高电压诱导时 ,后者是主要因素。推导了二阶极化率的表达式 ,并进行了数值计算。数值结果表明 ,在一般情况下 ,χ3 3 ( 2 ) 约 1pm/V ,χ3 3 ( 2 ) ∶χ3 1( 2 ) 约为 3。理论证明提高诱导的外加电压和选用Na和OH杂质浓度较大的石英材料能提高二阶极化率。     

用矩阵元表示的空间自相关函数的传输特性

根据自相关函数的定义 ,从Fresnel衍射理论入手 ,运用Collins公式 ,推导得到了任意波面的空间自相关函数的传输公式 ,并针对几种特殊的光学系统进行了分析。     

多用户共信道信号的半盲闭式分离方法

该文充分利用数字移动通信系统中的已知短序列,给出了一种半盲多用户共信道信号分离方法。该方法首先得到信号的零空间,然后借助于各用户中的已知短序列,采用LMS算法得到各用户信号的估计。与非盲方法相比,所需的已知短序列非常有限,其最短长度仅为共用同一个信道的用户数。同时也克服了全盲方法运算量大和存在局部极小点等问题。计算机仿真实验表明,在多径条件下,该方法适用于智能天线系统中上行共信道信号的分离。     

S1240J型机市话带故障的处理

介绍制作S1240交换机市话计费带时容易出现的几种故障,并给出了相应的处理方法。     

主动防御新技术及其在电力信息网络安全中的应用

随着信息化技术的不断发展和普及,构建信息网络系统提高了人们的工作效率,也改变了人们的工作方式,在各个行业中都起到了非常好的促进作用.本文就电力信息网络安全存在的问题,对主动防御技术进行相应的分析,并对主动防御技术在电力信息网络安全中的应用进行相应的探讨.希望为电力网络安全的发展提供一些有用的建议.     

Single-Crystalline TiO2(B) Nanobelts with Unusual Large Exposed {100} Facets and Enhanced Li-Storage Capacity

The {100} facet of single-crystalline TiO₂(B) is an ideal platform for inserting Li ions, but it is hard to be obtained due to its high surface energy. Here, the single-crystalline TiO₂(B) nanobelts from H₂Ti₃O₇ with nearly 70% {100} facets exposed are synthesized, which significantly enhances Li-storage capacity. The first-principle calculations demonstrate an ab in-plane 2D diffusion through the exposed {100} facets. As a consequence, the nanobelts can significantly accommodate Li ions in LiTiO₂ formula with specific capacity up to 335 mAh g⁻¹, which is in good agreement with the electrochemical characterizations. Coating with conductive and protective poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), the cut-off discharge voltage is as low as 0.5 V, leading to a capacity of 160.7 mAh g⁻¹ after 1500 cycles with a retention rate of 66% at 1C. This work provides a practical strategy to increase the Li-ion capacity and cycle stability by tailoring the crystal orientation and nanostructures.     

X射线脉冲星导航系统选星方法研究

针对X射线脉冲星导航(XPNAV)系统的选星问题,该文研究了脉冲星可见性、品质因子及空间分布对脉冲星优选的影响。分别建立了第三体阴影遮挡,X射线干扰源影响以及X射线探测器视场角限制造成脉冲星不可见的约束方程;分析了基于克拉美罗界的脉冲星品质因子评价公式;提出了脉冲星组合加权几何精度因子(WDOP)的计算方法,并证明了加权几何精度因子值随着脉冲星观测数量的增加而减小。最后设计了一种基于查表法的脉冲星选星方法。仿真结果表明,设计的脉冲星选星方法可以有效地从适合导航的脉冲星中优选出最佳脉冲星组合。     

Single event soft error in advanced integrated circuit

As technology feature sizes decrease, single event upset (SEU), and single event transient (SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU) (or multi cell upset) effects, digital single event transient (DSET) and analogue single event transient (ASET) caused serious problems for advanced integrated circuits (ICs) applied in a radiation environment and have become a pressing issue. To face this challenge, a lot of work has been put into the single event soft error mechanism and mitigation schemes. This paper presents a review of SEU and SET, including: a brief historical overview, which summarizes the historical development of the SEU and SET study since their first observation in the 1970's; effects prominent in advanced technology, which reviews the effects such as MBU, MSET as well as SET broadening and quenching with the influence of temperature, device structure etc.; the present understanding of single event soft error mechanisms, which review the basic mechanism of single event generation including various component of charge collection; and a discussion of various SEU and SET mitigation schemes divided as circuit hardening and layout hardening that could help the designer meet his goals.     

Design of 25 Gbit/s half-rate CDR with 1:2 demultiplexer for 100 GbE optical interconnects

A 25 Gbit/s clock and data recovery(CDR) circuit with 1:2 demultiplexer for 100 Gbit/s Ethernet(100 Gb E) optical interconnects has been designed and fabricated in Taiwan Semiconductor Manufacture Company(TSMC) 65 nm complementary metal-oxide-semiconductor(CMOS) technology. A novel quadrature voltage-controlled-oscillator(QVCO) structure adopts two pairs of transconductance cell and inverters to acquire rail-to-rail output swing. A half-rate bang-bang phase detector adopts four flip-flops array to sample the 25 Gbit/s input data and align the data phase, so the 25 Gbit/s data are retimed and demultiplexed into two paths 12.5 Gbit/s output data. Experimental results show that the recovered clock exhibits a peak-to-peak jitter of 7.39 ps and the recovered data presents a peak-to-peak jitter of 7.56 ps, in response to 312-1 pseudorandom bit sequence(PRBS) input. For 1.2 V voltage supply, the CDR circuit consumes 92 m W(excluding output buffers).