Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology

In this study, nondestructive test is developed to analyze the structure failure of LED package. The relationship between thermal resistance analysis and LED package failure structure is build with T3Ster thermal transient tester and scanning electron microscope (SEM). The failure LED device with defect in the attaching layer and gap between LED chip and copper are designed advisedly. The failure factors of LED package have been measured with thermal resistance analysis and SEM cross-section images. The thermal dissipation performance of LED with defect in the attaching layer is indicated by thermal resistance analysis combined with SEM cross-section images. The blister in attaching layer results in 4.4 K/W additional thermal resistance. The gap between LED chip and copper also makes high additional thermal resistance with 8.6 K/W. Different failures of LED packages are indicated obviously using thermal transfer analysis. The LED package failure structure such as interface defect between solder and cup-shaped copper is able to forecast without destructive measurement.     

Chaos in wavelength of tunable semiconductor laser diode with time-delayed Fabry-Perot feedback

With time-delayed Fabry-Perot feedback, chaos in the wavelength of a tunable semiconductor laser diode has been successfully demonstrated. The nonlinear feedback function can be easily tuned by varying the optical path difference of a Fabry-Perot cavity. Experimental results are compared with theoretical simulation and good agreement is obtained.     

Transparent Soft Robots for Effective Camouflage

Transparency is a surprisingly effective method to achieve camouflage and has been widely adapted by natural animals. However, it is challenging to replicate in synthetic systems. Herein, a transparent soft robot is developed, which can achieve effective camouflage. Specifically, this robot is driven by transparent dielectric elastomer actuators (DEAs). Transparent and stretchable conductive polymers, based on blends of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and water‐borne polyurethane (WPU), are employed as compliant solid‐state electrodes in the DEAs. The electrode exhibits large stretchability, low stiffness, excellent conductivity at large strain, and high transmittance. Consequently, the DEA can achieve a large voltage‐induced area strain of 200% and a high transmittance of 85.5%. Driven by these soft actuators, the robot can realize translations using its asymmetric vibration mode, which can be explained by dynamics analysis and is consistent with finite element modeling. This soft robot can achieve effective camouflage, due to its high transparency as well as thin structure. Furthermore, the robot can become completely flat for even better camouflage by converting its 3D structure to 2D. The transparent soft robot is potentially useful in many applications such as robots for battlefield, reconnaissance, and security surveillance, where effective camouflage is required in dynamic and/or unstructured environments.     

A 20-Gb/s 0.13-/spl mu/m CMOS serial link transmitter using an LC-PLL to directly drive the output multiplexer

A 20-Gb/s transmitter is implemented in 0.13-/spl mu/m CMOS technology. An on-die 10-GHz LC oscillator phase-locked loop (PLL) creates two sinusoidal 10-GHz complementary clock phases as well as eight 2.5-GHz interleaved feedback divider clock phases. After a 2/sup 20/-1 pseudorandom bit sequence generator (PRBS) creates eight 2.5-Gb/s data streams, the eight 2.5-GHz interleaved clocks 4:1 multiplex the eight 2.5-Gb/s data streams to two 10-Gb/s data streams. 10-GHz analog sample-and-hold circuits retime the two 10-Gb/s data streams to be in phase with the 10-GHz complementary clocks. Two-tap equalization of the 10-Gb/s data streams compensate for bandwidth rolloff of the 10-Gb/s data outputs at the 10-GHz analog latches. A final 20-Gb/s 2:1 output multiplexer, clocked by the complementary 10-GHz clock phases, creates 20-Gb/s data from the two retimed 10-Gb/s data streams. The LC-VCO is integrated with the output multiplexer and analog latches, resonating the load and eliminating the need for clock buffers, reducing power supply induced jitter and static phase mismatch. Power, active die area, and jitter (rms/pk-pk) are 165 mW, 650 /spl mu/m/spl times/350 /spl mu/m, and 2.37 ps/15 ps, respectively.     

Performance analysis of two-branch transmit diversity block-coded OFDM systems in time-varying multipath Rayleigh-fading channels

Based on Alamouti code, Lee and Williams proposed two-branch transmit diversity block-coded orthogonal frequency-division multiplexing (TDBC-OFDM) systems, namely, space-time block-coded OFDM (STBC-OFDM) and space-frequency block-coded OFDM (SFBC-OFDM). However, they employed the simple maximum-likelihood (SML) detector, which was designed under the assumption that the channel is static over the duration of a space-time/frequency codeword. Therefore, STBC-OFDM/SFBC-OFDM suffers from the high time/frequency selectivity of the wireless mobile fading channel. In this paper, besides the original SML detector, three detectors proposed by Vielmon et al. are applied to improve the two-branch TDBC-OFDM systems. Additionally, assuming sufficient cyclic prefix, the performances of all systems in spatially uncorrelated time-varying multipath Rayleigh-fading channels are evaluated by theoretical derivation and computer simulation, as well. According to the derived bit-error rate (BER), we further derive the bit-error outage (BEO) to provide a more object judgment on the transmission quality within a fading environment. Numerical results have revealed that significant performance improvement can be achieved even when the systems are operated in highly selective channels.     

Real-time processing algorithms for target detection andclassification in hyperspectral imagery

The authors present a linearly constrained minimum variance (TCMV) beamforming approach to real time processing algorithms for target detection and classification in hyperspectral imagery. The only required knowledge for these LCMV-based algorithms is targets of interest. The idea is to design a finite impulse response (FIR) filter to pass through these targets using a set of linear constraints while also minimizing the variance resulting from unknown signal sources. Two particular LCMV-based target detectors, the constrained energy minimization (CEM) and the target-constrained interference-minimization filter (TCIMF), are presented. In order to expand the ability of the LCMV-based target detectors to classification, the LCMV approach is further generalized so that the targets can be detected and classified simultaneously. By taking advantage of the LCMV-based filter structure, the LCMV-based target detectors and classifiers can be implemented by a QR-decomposition and be processed line-by-line in real time. The experiments using HYDICE and AVIRIS data are conducted to demonstrate their real time implementation     

Time and temperature-dependent mechanical behavior of underfill materials in electronic packaging application

The thermo-mechanical testing of HYSOL FP4549 polymer-filled underfill materials was conducted under different strain rate and temperature environment. A new specimen preparation procedure and further test methodology are developed to characterize the time–temperature mechanical behaviors of underfill materials. The stress–strain behavior of materials is simulated with constitutive framework, and the dependence of Young’s modulus on temperature and strain rate was evaluated. In addition, the specimens were tested with microforce testing system to evaluate the creep curve of underfill materials as a function of temperature and stress level. In view of the uncertainty of the Young’s modulus determination, the specimens were tested with unloading–reloading technique to verify the test results and investigate its cyclic mechanical behaviors. On the other hand, the adhesion strength of underfill materials are tested between different adhesion surface by different deformation rate after some isothermal and hygro-thermal environments attack, which is to simulate the environment that the electronic components may be encountered. The results reveal that the rise of the temperature and moisture cause the apparent reduction of the surface adhesion strength, due to the microstructure transition of materials and the diffusion and concentration of moisture. For all conditions of the experiment after environmental preconditioning, the specimen fracture surfaces occur between solder mask and FR4 substrates, which means the measured strength is the adhesion strength between solder mask and FR4. Comparing different adhesion surface, the adhesion strength of underfill/FR4 is higher than solder mask/FR4. The interface of solder mask/FR4 is more sensitive to the temperature and moisture. In all of the cases, increasing the moisture level has a varying but significant effect on both fracture strength and absorption energy Ψ. The failure mode transfer and the strength degradation are attributed to the moisture uptake between the FR4/solder mask and solder mask/underfill interface.     

Analysis of etched long-period fibre grating and its response to external refractive index

Analytical formulas are presented for the first time to describe the shift in the resonance wavelength of a long-period fibre grating (LPFG) in response to etching of the fibre cladding or a change in the external refractive index. The accuracy of the formulas is confirmed by comparison with numerical simulations and experimental results. It is shown that the resonance wavelengths of an etched LPFG are more sensitive to the external refractive index than those of an unetched grating.     

Fabrication process simulation and reliability improvement of high-brightness LEDs

To enhance the light extraction efficiency and thermal performance of AlGaInP light-emitting diodes (LEDs), the wafer bonding technique which can replace the GaAs substrate with other high thermal conductivity substrates was applied. However, this technique may make the film crack during either the removal etching process of the GaAs substrate or the annealing process after the GaAs removal. Therefore, this crack problem is an important issue in the reliability/yield of high-brightness LEDs. In this research, a detailed finite element model of the high-brightness AlGaInP LED, which is replaced by the GaAs substrate with high thermal conductivity substrate through the Au–In metal bonding technique, was developed and fabricated. In addition, the mechanical behavior of wafer-level metal bonding was also simulated by finite element analysis (FEA) and validated by experimental measurements. Hence, the above validated simulation technique combined with process modeling is used to understand the stress variation of the multilayer structure of AlGaInP LED during the fabrication process and to find the principal cause of the film crack.     

Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

Constant-voltage-bias (V_DS = V_GS = 30 V) stress measurements are performed for a period of 10⁵ s on thin-film transistors (TFTs) with amorphous indium-gallium-zinc-oxide (IGZO) channel layers fabricated via RF sputtering using a postdeposition annealing temperature of 200degC, 250degC, or 300degC. Thermal silicon dioxide is employed as a TFT bottom-gate insulator. All SiO₂/IGZO TFTs tested exhibit the following: 1) a positive rigid log(I_D)- V_GS transfer curve shift; 2) a continuous drain-current decrease over the entire stress duration; and 3) recovery of the log(I_D)-V_GS transfer curve toward the prestressed state when the stressed TFT is left unbiased in the dark at room temperature for an extended period of time. The SiO₂/IGZO TFTs subjected to a higher postdeposition annealing temperature are more stable. A small (and typically negligible) amount of clockwise hysteresis is present in the log(I_D) -V_GS transfer curves of IGZO TFTs. These instability and hysteresis observations are consistent with a SiO₂/ IGZO TFT instability mechanism involving electron trapping within the IGZO channel layer.