互联网市场:理性的高速发展——直击“2007中国互联网市场年会”

<正>2006岁末,美国《时代》周刊年度风云人物的揭晓让人意外之余又都颇感认同——全球逾10亿“互联网使用者”共同获此殊荣。的确,历经十几年的发展,“互联网”已密切融入人们的生活。与此同时,互联网市场也发展成为今天涵盖基础接人服务、电子商务、网络游戏、即时通讯、网络搜索等诸多领域的庞大产业。那么目前我国互联网产业整体发展状况以及未来的发展趋势究竟如何呢?透过1月19日于北京成功举办的“2007中国互联网市场年会”,我们可以对此有一个比较深入的了解。     

石蜡微胶囊中脲醛树脂壁材渗透性的研究

利用差示扫描量热法研究了石蜡微胶囊中脲醛树脂壁材对水及甲苯的渗透性 ,结果表明 ,水不能透过脲醛树脂壁材 ,而甲苯则易透过脲醛树脂壁材。因此 ,该石蜡微胶囊不能用于芳香族溶剂存在的场合。     

智能工作站主机的MMPIS实验模型研究──一个全互连式结构MMPIS硬件环境的设计与实现

本文介绍中日国际合作开发研究的Ａ１型智能网（Ａ１型ＩＮ）智能工作站（ＩＷ）主机的并行推理硬件结构的实验模型设计与实现，给出了一种并行推理硬件支持环境实现方案和该方案在实现中若干问题的解决方法。     

新型重整催化剂的研究——Pt／L中沸石酸碱性的作用

Ｐｔ／ＫＬ、Ｐｔ／ＢａＫＬ及Ｐｔ／ＨＬ上的铂与沸石的酸碱位发生相互作用，导致催化剂上存在不同电子状态和粒度分布的铂位，从而产生有着完全不同催化作用、不同抗硫性能的两类催化剂，即以碱性沸石为载体的“单功能”催化剂和以酸性沸石为载体的“双功能”催化剂。在Ｐｔ／ＫＬ、Ｐｔ／ＢａＫＬ催化剂上，存在着对硫敏感的具有环化脱氢功能和对硫不敏感的仅具有脱氢功能的两类铂活性位。     

内燃机油添加剂之间相互作用的研究

探讨了内燃机油添加剂之间的相互作用，磺酸盐与水杨酸盐的相容性差，混合后有沉淀物生产；水杨酸盐与丁二酰亚胺，ＺＤＤＰ有较弱的相互作用，添加量小时无沉淀物生成，添加量大时才有沉淀物生成；磺酸盐与丁二酰亚胺，ＺＤＤＰ的相容性好，混合后沉淀物生成。该结论为内燃机油的调配，贮存和全用提供了科学依据。     

OSCILLATION AMPLITUDE OF THE FREE END OF A FLEXIBLY MOUNTED RIGID CYLINDER IN TRIANGLE ARRANGEMENT

In this paper,the oscillation amplitude of the free end of a group of threecylinders are studied.The three cylinders are erected at the vertices of an equilateral trian-gle,and three arrangements are made in this study.One of the three cylinders is served asa working cylinder which is mounted by a flexible cantilever and two accelerometers areattached on the free end in two directions.The results of the three-cylinder arrangementare compared with those of two cylinders in tandem/side-by-side arrangement in the samecondition.The experimental results show that the rear cylinder of a group of three cylin-ders is affected more seriously than that of the corresponding two cylinders in the contrastarrangement.The main direction of oscillation is changed.The transversal oscillation isstronger than the longitudinal oscillation in the three-cylinder arrangement.On the con-trary,the transversal oscillation is much weaker than the longitudinal oscillation in two-cylinder arrangement.The largest transversal oscillat     

GLOBAL: A Design for Random Testability Algorithm

1MotivationsIncreasingdensityofVLSIchipsmakesthecostoftestingveryexpensive.Designfortestabilitycantemperthisproblemdrastically.Therearetwokindsofsolutions:(i)localsolutionl3'2]withlowcomputingcomplexity,whichcannotalwaysgetsatisfactoryresults;(ii)globa.lsolutionwithprohibitivecomputingcomplekityl1'5].T.H.Chen'andM.A.Breuer[1lpresentedanILPmodeltoplacetestpointsglobally.Becauseofitscomputingcomplealty,[1lcanonlydealwithsmallormediumscalecircuits.SCOAPisusedin[1],whichisnotaveryaccuratet…     

非线性系统鲁棒吸引的动态补偿方法

考虑非线性不确定系统的鲁棒吸引问题,借助于动态输出反馈,构造了两类控制律。这两类控制律分别可使相应的闭环系统被一任意小的区域鲁棒吸引,或被一预先设置的区域有限吸引。     

Clinical study on effect of bushen shengxue paste in treating renal anemia patients

OBJECTIVE: To evaluate the therapeutical mechanism of Bushen Shengxue Paste (BSSXP) on anemia. METHODS: Chronic renal failure induced anemia patients were treated with BSSXP, clinical manifestation, anemia and renal function as indicators were observed in patients. The erythropoietin (EPO) and inhibition of colony-forming unit-erythrocyte (CFU-E) in patients' serum were determined by CFU-E in vitro. RESULTS: The patients' symptoms, renal function and anemia were improved after administration with BSSXP 1-2 course. EPO in serum was slightly increased. The inhibition of CFU-E in patient's serum was significantly decreased. CONCLUSIONS: BSSXP could improve the anemia degree, its mechanism might be through clearing the inhibitor of CFU-E in serum.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors