A simple method for extracting average doping concentration in thepolysilicon and silicon surface layer near the oxide in polysilicon-gateMOS structures

The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

Fabrication of optical fibre nanowires and their optical and mechanical characterisation

It is demonstrated for the first time that long nanowires with radii as small as 30 nm can be manufactured with a conventional coupler fabrication rig. The temporal deterioration of nanowire optical properties has been studied and correlated with its mechanical behaviour. The original transmission properties have been restored by a post-fabrication treatment.     

与商业比肩而行

“许多美术行为都是与商业客户相结合的。以商业的视角看待作品更重视在整个概念部分是不是能够从设计的观点很忠实地传达出商业诉求，并引起更大共鸣”。[编者按]     

Measurement of three-phase transformer derating and reactive power demand under nonlinear loading conditions

The measurement of real and apparent power derating of three-phase transformers is important for transformers feeding nonlinear loads. This paper presents a new digital data-acquisition method for measuring derating and reactive power demand of three-phase transformers under full or partial load conditions. The accuracy requirements of the instruments employed (potential, current transformers, shunts, voltage dividers, optocouplers volt- and current meters) are addressed. Application examples demonstrate the usefulness of this new digital data-acquisition method.