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41.
42.
An empirical formula for calculating the extinction cross section (ECS) by raindrops over a broad frequency range is first derived based on extensive calculations made on a widely varying in mean radius of modified Pruppacher and Pitter (MPP) raindrop models ranging from 0.25 to 3.5 mm. The expansion coefficients in the empirical formula are determined by least-squares curve fitting of numerical data obtained by the volume integral equation formulation (VIEF). The formula satisfies the frequency and raindrop size dependence. Numerical results obtained from the empirical formula for calculating the ECS are generally in good agreement with those calculated by the VIEF for raindrops with mean radius varying from 0.25 to 3.5 mm in the frequency range from 0.6 to 100 GHz. The average error in the ECS is less than 10%. The formula thus provides a simple and inexpensive method for calculating the ECS of raindrops, which otherwise requires complicated and expensive methods of calculation. By implementing this empirical formula of ECS into the rain attenuation equation, a new numerically empirical formula for calculating the specific rain attenuation is also proposed. The validity of the empirical formula for calculating the specific rain attenuation is also checked by comparing the obtained results of specific rain attenuation with those obtained from Li et al.'s (1995) solution, Yeo et al.'s (1993) measurement, and Olsen et al.'s (1978) power-law equation  相似文献   
43.
转移法色交换   总被引:1,自引:0,他引:1  
将图G的着色由一种变为中一种,通常用Kempe法以交换。但是,对于某些情况,用此法无效。针对这个问题,本文提出了一种转移法色交换,它适用于平面图着色,方法直观,清晰且有效。  相似文献   
44.
 Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force” simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective inductance” method, in which an approximate, very efficient method of extracting an SSN L eff  is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm. Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence. Received: 19 March 1997 / Accepted: 25 March 1997  相似文献   
45.
The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development  相似文献   
46.
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device  相似文献   
47.
The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied  相似文献   
48.
49.
Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.  相似文献   
50.
Acrylonitrile–butadiene–styrene (ABS)/montmorillonite nanocomposites have been prepared using a direct melt intercalation technique by blending ABS and organophilic clay of two different particle sizes: OMTa (5 µm) and OMTb (38 µm). Their structure and flammability properties were characterized by X‐ray diffraction, high resolution electronic microscopy (HREM), thermogravimetric analysis (TGA) and cone calorimeter experiments. The results of HREM showed that ABS/5 wt% OMTa nanocomposite was a kind of intercalated–delaminated structure, while ABS/5 wt% OMTb nanocomposite was mainly an intercalated structure. The nanocomposites showed a lower heat release rate peak and higher thermal stability than the original ABS by TGA and cone calorimeter experiments. Also, the intercalated nanocomposite was more effective than an exfoliated–intercalated nanocomposite in fire retardancy. Copyright © 2003 Society of Chemical Industry  相似文献   
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