论国有企业激励机制和约束机制的设计

本文通过对建立国有企业激励机制和约束机制的过程中存在的问题进行分析，找出其产生的原因，并尝试提出国有企业激励和约束机制设计思路与对策。     

以设计驱动企业发展

“我们不想通过一点点发展现有的业 务来挣一些小钱，公司需要的是进行创新，研发新产品并提高边际增长率。”[编者按]     

Hydriding and Dehydriding Characteristics of Mechanically Alloyed LaMg_(17) Ni Composite Material

Magnesiumandmagnesiumalloyshavebeenin vestigatedashydrogenstoragematerialsforseveralde cadesbecausefarmorehydrogenbyweightcanbestoredinthemthaninmostoftheothercurrentlyknownhydrogenstoragealloys .Moreover ,thehighnaturalabundanceofMg ,itslightmassandenviron mentalcompatibilitypotentiallymakemagnesiumoneofthemostprospectivecandidatesforfuturehydrogenstoragematerials .Unfortunately ,thepracticalappli cationofMganditsalloyshasbeenlimitedonlytocertainstoragedevicebecauseoftheirpoorhydriding dehydr…     

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing

In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The annealing procedure was performed immediately after the deposition of the InAs layer. The effects of annealing time and annealing temperature on the dot density, dot size, and optical characteristics of the QDs were investigated. The optimum annealing conditions to obtain low-density QDs are longer than 60 s and higher than 500degC . Meanwhile, no luminescence can be observed for the wetting-layer, which may suggest that the postgrowth annealing will make the wetting layer thinner and thus reduce the effects of wetting layer on carrier relaxation and recombination. On the other hand, we observe that a decrease of the PL intensity at the annealing conditions of 60 s and 515degC , which is possibly due to the increasing surface dislocations resulted from the In adatom desorption at higher annealing temperature.     

Enhancement of underfill capillary flow in flip-chip packaging by means of the inertia effect

This paper describes how the use of inertia forces induced by the rotation of a working disk may be adopted to increase the fill rate of the flip-chip packaging process and thereby reduce the process cycle time. It is shown how the driving forces resulting from the inertia effect are determined by the Weber number. The constant and varying contact angle models are compared under a specified set of process conditions. The calculated flow behavior results indicate that the relationship between the contact angle, the average fluid velocity, the liquid-air interface position, and the filling time depends upon the Weber number. The constant and varying contact angle models are utilized in the analysis of a new processing method referred to as rotation-enhanced underfill packaging (REUP). The inertia effect induced by the angular motion of the working disk is shown to enhance the flow of the underfill encapsulant and to reduce the time of the underfill process. The present results confirm that the rotation of the working disk leads to an increased underfill capillary flow rate, which is beneficial in reducing the production cycle time of the flip-chip packaging process.     

梯恩梯-吉纳、地恩梯-太安装药体系自旋爆轰特性的研究

本文研究了梯恩梯-吉纳(TNT-DINA)和地恩梯-太安(DNT-PETN)体系的自旋爆轰现象,爆轰波是以低频脉冲方式传播.这些体系具有的爆速、爆热分别为DJ=7.3～7.4km/s和Qv=(5.40±0.01)MJ/kg.不同组成的爆速和爆压PJ通过SW程序计算.用扩散区的爆压P3和爆温T3来评估爆轰波的衰减和重新点火.敏化剂含量相同,梯恩梯-黑索金(TNT-RDX)体系的爆压PJ大于TNT-DINA的爆压,TNT-RDX体系的温度T3比TNT-DINA高60～100K.计算值与实验结果吻合较好.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Stabilization of singularly perturbed fuzzy systems

This paper presents some novel results for stabilizing singularly perturbed (SP) nonlinear systems with guaranteed control performance. By using Takagi-Sugeno fuzzy model, we construct the SP fuzzy (SPF) systems. The corresponding fuzzy slow and fast subsystems of the original SPF system are also obtained. Two fuzzy control designs are explored. In the first design method, we propose the composite fuzzy control to stabilize the SPF subsystem with H/sup /spl infin// control performance. Based on the Lyapunov stability theorem, the stability conditions are reduced to the linear matrix inequality (LMI) problem. The composite fuzzy control will stabilize the original SP nonlinear systems for all /spl epsiv//spl isin/(0,/spl epsiv//sup */) and the upper bound /spl epsiv//sup */ can be determined. For the second design method, we present a direct fuzzy control scheme to stabilize the SP nonlinear system with H/sup /spl infin// control performance. By utilizing the Lyapunov stability theorem, the direct fuzzy control can guarantee the stability of the original SP nonlinear systems for a given interval /spl epsiv//spl isin/[/spl epsiv/_,/spl epsiv/~]. The stability conditions are also expressed in the LMIs. Two SP nonlinear systems are adopted to demonstrate the feasibility and effectiveness of the proposed control schemes.     

Benzoquinones, a homoisoflavanone and other constitutents from Polygonatum alte-lobatum

From the rhizomes of Polygonatum alte-lobatum, two new homologous series of 1,4-benzoquinones, polygonaquinones A and B, a novel homoisoflavanone, a new gentrogenin glycoside and 13 known compounds were isolated and characterized. The structures of the new compounds were determined as two homologous series of three 2,5-dihydroxy-3-methyl-6-alkyl-1,4-benzoquinones and three 2-hydroxy-3-methyl-6-alkyl-1,4-benzoquinones, with chain lengths C21 to C23, and 4',5,7-trihydroxy-6,8-dimethylhomoisoflavanone and gentrogenin 3-O-beta-D-glucopyranosyl(1-->2)-[beta-D-xylopyranosyl(1-->3)] -beta-D-glucopyranosyl(1-->4)-beta-D-galactopyranoside.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.