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61.
Sosnowchik B.D. Azevedo R.G. Cao A. Lin L. Pisano A.P. 《Advanced Packaging, IEEE Transactions on》2005,28(4):626-634
This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests. 相似文献
62.
Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall 总被引:1,自引:0,他引:1
Chia-Feng Lin Zhong-Jie Yang Jing-Hui Zheng Jing-Jie Dai 《Photonics Technology Letters, IEEE》2005,17(10):2038-2040
In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications. 相似文献
63.
64.
Tsang T.K.K. Kuan-Yu Lin El-Gamal M.N. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(3):214-218
This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology. 相似文献
65.
Lei Liu Ying Kong Hong Xu Jin P. Li Jin X. Dong Zhi Lin 《Microporous and mesoporous materials》2008,115(3):624-628
A three-dimensional zinc phosphate compound with DFT topology, designated as ZnPO4-EU1, has been synthesized by an ionothermal approach from the system HF-ZnO–P2O5-choline chloride-imidazolidone. Ethylenediamine, derived from decomposition of the imidazolidone component of the deep-eutectic solvent (DES) itself, is delivered to the synthesis and serves as an appropriate template for ZnPO4-EU1. Experiments in which the synthesis conditions were varied showed that ZnPO4-EU1 may be prepared over a wide molar ratio of P/Zn = 0.55–13.0. Powder X-ray diffraction patterns have been obtained at intervals to track the crystallization process of this material. The experimental data show that Zn3(PO4)2 · 4H2O (a dense phase) was first isolated from the DES after reaction for 1 h. Subsequently, the pure phase of ZnPO4-EU1 was obtained with increasing crystallization time from 12 h to 72 h. The experimental results show that the nucleation and crystallization take place with relatively low levels of solvent degradation, demonstrating that zinc phosphate with a three-dimensional framework can be synthesized by in situ generation of an appropriate template using an unstable DES at high temperatures (150–200 °C). 相似文献
66.
67.
Nanofiber bundles of Ag2S, Ag2Se, and Ag have been successfully synthesized by making use of Ag2C2O4 template nanofiber bundles, utilizing both anion‐exchange and redox reactions. The obtained bundles were polycrystalline nanofibers composed of nanoparticles in which the precursor morphology was well‐preserved, indicating that Ag2C2O4 nanofiber bundles acted as a general sacrificial template for the synthesis of silver‐based semiconductor and metal nanofibers. Dispersing media and transforming reactants were found to be key factors influencing the chemical transformation in the system. In particular, separate single‐crystalline Ag nanofibers were obtained via a nontemplate route when ascorbic acid was used as a relatively weak reductant. An electrical transfer and switching device was built with the obtained Ag2S and Ag nanofiber bundles, utilizing the unique ion‐conductor nature of Ag2S and revealing their potential applications in electronics. 相似文献
68.
Haijun Fang Zongli Lin 《Automatic Control, IEEE Transactions on》2006,51(7):1177-1184
In this note, we revisit the problem of global practical stabilization for planar linear systems subject to actuator saturation and input additive disturbances. A parameterized linear state feedback law is designed such that, by tuning the value of the parameter, all trajectories of the closed-loop system converge to an arbitrarily small neighborhood of the origin in a finite time and remain in there. 相似文献
69.
Zhiping Lin Xu L. Bose N.K. 《IEEE transactions on circuits and systems. I, Regular papers》2008,55(1):445-461
70.