无横梁高刚性轧机的结构分析

本文介绍了无横梁高刚性轧机的新颖结构，分析了该轧机高刚性及轴承长寿的原理。该轧机在现场使用中，取得了良好的效果。     

Characteristics of aperture coupled microstrip antennas withvarious radiating patches and coupling apertures

A full wave moment method is applied to the analysis of aperture coupled microstrip antennas, in which all components of the electric and equivalent magnetic surface currents are considered. The electric current distributions on the rectangular patch for different coupling aperture positions are presented with their radiation patterns. The effects of the coupling aperture shape and size on the input impedance and radiation performance are also discussed. As an example of new radiators, slotted patches are studied, and it is shown that they can be used to achieve dual-frequency operation     

MIS型单晶硅液晶光阀

详细介绍了一种新颖、快速响应的金属－绝缘层－半导体构成的MIS型单晶硅液晶光阀的结构、工作机理、制作工艺和性能参数测试。液晶采用45°扭曲向列型混合场效应工作模式。所得到的光阀的极限分辨率为40lp／mm，口径40mm，最大对比度＞100：1，在930nm（△λ＝40nm）写入光灵敏度为20μW／cm2，响应时间为15ms。报道了该光阀在大屏幕投影显示中的应用。     

复杂电磁环境中线天线近场数模预测

本文应用矩量法和几何绕射理论的混合技术及矩量法的稀疏技术详细分析和计算了多导体同时存在的复杂电磁环境中线天线的近场。理论值与实验数据进行比较，两者基本吻合。     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

TVD有限体积法在二维超音速流计算中的应用

将具有二阶精度的ＴＶＤ有限体积法推广应用到三维无粘流的计算．提出三维流场计算使用的计算网格的生成方法．最后计算了三维纯头体超音速绕流，并和相应文献的结果进行了比较，结果令人满意