纳米技术在中药开发中的应用

本文综述了纳米科技与中药制剂相结合的发展，阐述了纳米中药的概念、特性，介绍了纳米中药的制备技术，另外探讨了收集纳米粒子的方法，最后，着重展望了纳米技术在中药制剂中广泛的应用前景。     

PRO——一种新的地震资料处理方法

PRO(影像的参数展开)技术是由俄罗斯地球物理学家开发的一种崭新的地震资料处理技术。本文从PRO基本原理入手,简单介绍了PRO的速度分析原理。PRO速度分析和成像均以信号的椭圆展开和参数展开为基础,其中参数展开方法考虑波型转换、介质的横向不均匀造成传播速度的变化。该技术抛开了传统共中心点叠加的思想,从根本上解决了以CMP方法为基础的传统地震处理技术遇到的困难。通过模型与实例分析对比,PRO比传统CMP方法更优越。     

变频调速技术在污水处理厂的应用

概述污水处理厂的一般工艺，简单介绍了风机、水泵等的节能特点，介绍了变频调速装置在污水处理厂各处理工段的应用。     

立方相GaN的持续光电导

研究了金属有机物化学气相外延 (MOVPE)方法生长的非故意掺杂的立方相 Ga N的持续光电导效应 .在六方相 Ga N中普遍认为持续光电导效应与黄光发射有关 ,而实验则显示在立方 Ga N中 ,持续光电导效应与其中的六方相 Ga N夹杂有关系 ,而与黄光发射没有关系 .文中提出 ,立方相 Ga N与其中的六方相 Ga N夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因 .通过建立势垒限制复合模型 ,解释了立方相 Ga N的持续光电导现象的物理过程 ,并对光电导衰减过程的动力学作了分析 .对实验数据拟合的结果证明以上的模型和推导是与实验相符的 .     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

NMR structure and mutagenesis of the FADD (Mort1) death-effector domain

When activated, membrane-bound receptors for Fas and tumour-necrosis factor initiate programmed cell death by recruiting the death domain of the adaptor protein FADD to the membrane. FADD then activates caspase 8 (also known as FLICE or MACH) through an interaction between the death-effector domains of FADD and caspase 8. This ultimately leads to the apoptotic response. Death-effector domains and homologous protein modules known as caspase-recruitment domains have been found in several proteins and are important regulators of caspase (FLICE) activity and of apoptosis. Here we describe the solution structure of a soluble, biologically active mutant of the FADD death-effector domain. The structure consists of six antiparallel, amphipathic alpha-helices and resembles the overall fold of the death domains of Fas and p75. Despite this structural similarity, mutations that inhibit protein-protein interactions involving the Fas death domain have no effect when introduced into the FADD death-effector domain. Instead, a hydrophobic region of the FADD death-effector domain that is not present in the death domains is vital for binding to FLICE and for apoptotic activity.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

半导体激光器用铷D2线光电流谱稳频

本文报导了用铷原子７８００Ａ光电流谱来稳定半导体激光器的工作，在光电流谱线的中部发现了有利于稳频的凹陷，将半导体激光器频率锁定在凹陷的中央，估算的频率稳定度为１ＭＨｚ。     

建立数据库用微机进行钻井液设计

为了更好地指导现场钻井液施工,利用微机建立有关数据库和相应的设计软件,根据地质、工程的要求和井下情况进行钻井液设计,其特点是资料全面、程序运行可靠且操作简便,设计符合现场情况,施工顺利。在千12区块,用微机设计的109口井与人工设计的75口井相比,钻井速度提高,井下复杂情况减少,提高了经济效益。