Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

系统仿真技术在控制系统中的应用

系统仿真技术是一种以对实际系统建立正确的数学模型为基础，以计算机为工具的对实际系统进行模拟的技术。计算机技术的高速发展，使系统仿真技术在各个领域中都得到了广泛的应用。以化工及工业锅炉自动控制系统中水箱系统的液位控制问题为例，阐述了系统仿真技术在自动控制领域中的应用。     

Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

Discrete Wavelet Transform: Architectures, Design and Performance Issues

Due to the demand for real time wavelet processors in applications such as video compression [1], Internet communications compression [2], object recognition [3], and numerical analysis, many architectures for the Discrete Wavelet Transform (DWT) systems have been proposed. This paper surveys the different approaches to designing DWT architectures. The types of architectures depend on whether the application is 1-D, 2-D, or 3-D, as well as the style of architecture: systolic, semi-systolic, folded, digit-serial, etc. This paper presents an overview and evaluation of the architectures based on the criteria of latency, control, area, memory, and number of multipliers and adders. This paper will give the reader an indication of the advantages and disadvantages of each design.     

Magnetotransport Calculations for Two-Dimensional Electrons with Spin-Orbit Interaction

We present calculations of the magnetoconductivity in a two-dimensional electron system including the Rashba spin-orbit interaction. Essential for these calculations is an extension of the self-consistent Born approximation which takes into account the electron spin degree of freedom. The calculated magnetoconductivity exhibits, besides the beating in the Shubnikov-de Haas oscillations, a modulation related to the spin-orbit induced crossings of Landau levels, as a consequence of spin-conserving scattering between spin-orbit coupled states.     

硫化氢吸收液的电化学分解条件研究

理想的脱硫工艺应满足体积小、费用低、净化度高、无二次污染等要求。在碱性溶液吸收微量硫化氢时同步进行电解，可有效减小设备体积，并将硫化氢转变为氢气和硫磺，不产生恶性气味。为此，实验研究了温度、浓度、电流密度、pH值等因素对电解阳极过程的影响，确定了适宜的电解条件，并在该条件下进行了吸收实验。结果表明，在最佳电解条件下，硫化钠溶液能充分吸收天然气中经变压吸附提浓的硫化氢（800 mg/m³），吸收率大于99.9％。     

闪光灯泵浦Nd3+:GGG激光特性研究

用闪光灯泵浦掺钕钆镓石榴石(Nd^3 ：GGG)激光晶体，研究了脉冲宽度0．5ms、1ms、1．5ms和2ms的放电泵浦下激光输出，实验获得了1．92J的最大激光能量．     

微杯电子纸及其后加工制程

SiPix利用独特的微杯(Microcup)结构和顶部灌注封装技术，通过连续整卷高速涂布的制程成功地制造出高性能的双稳性、装填电泳微粒的电子纸。SiPix可提供下列两种规格形式任意的EPD卷式成品：(A)用于有源矩阵EPD和直接驱动产品的可剥离保护膜／已灌装及密封的Microcup／无图案导体膜夹层卷；及（P）用于无源矩阵的行导体膜／已灌装及密封的Microcup／列导体膜夹层卷。已经开发出将EPD卷制成不同的显示模块或产品的简单的后续加工制程。     

Al、Mo含量对铸造钛合金力学性能的影响

运用正交实验 ,考察了Al、Mo含量对Ti Al Mo 1Zr系铸造钛合金力学性能的影响。试验结果表明 :随Al、Mo含量提高 ,铸造合金的强度增加 ,塑性和冲击韧性降低 ,但Al、Mo的交互作用却使合金塑性提高 ,强度和冲击韧性降低