首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   476396篇
  免费   21096篇
  国内免费   10033篇
电工技术   16700篇
技术理论   24篇
综合类   14335篇
化学工业   75456篇
金属工艺   20874篇
机械仪表   21620篇
建筑科学   24233篇
矿业工程   8036篇
能源动力   13517篇
轻工业   41912篇
水利工程   5675篇
石油天然气   18352篇
武器工业   1652篇
无线电   57635篇
一般工业技术   72233篇
冶金工业   58849篇
原子能技术   5565篇
自动化技术   50857篇
  2023年   4296篇
  2022年   7458篇
  2021年   10835篇
  2020年   8373篇
  2019年   7611篇
  2018年   9183篇
  2017年   10044篇
  2016年   9516篇
  2015年   10941篇
  2014年   14771篇
  2013年   24950篇
  2012年   20764篇
  2011年   24826篇
  2010年   20642篇
  2009年   20823篇
  2008年   21011篇
  2007年   20533篇
  2006年   20391篇
  2005年   18051篇
  2004年   14268篇
  2003年   13153篇
  2002年   11906篇
  2001年   11758篇
  2000年   11631篇
  1999年   13149篇
  1998年   21649篇
  1997年   15699篇
  1996年   12657篇
  1995年   9946篇
  1994年   8459篇
  1993年   7454篇
  1992年   5477篇
  1991年   4941篇
  1990年   4446篇
  1989年   4080篇
  1988年   3785篇
  1987年   2919篇
  1986年   2757篇
  1985年   3325篇
  1984年   2925篇
  1983年   2659篇
  1982年   2457篇
  1981年   2478篇
  1980年   2266篇
  1979年   2080篇
  1978年   1896篇
  1977年   2193篇
  1976年   2752篇
  1975年   1589篇
  1973年   1567篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
31.
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.  相似文献   
32.
33.
The selector activated sludge (SAS) systems are known to prevent excessive growth of filamentous microorganisms responsible for bulking sludge, but these systems were hardly ever modelled. This study aimed to develop a model capable of predicting rapid substrate removal in the SAS systems. For this purpose, the Activated Sludge Model No. 3 (ASM3) was extended with three processes (adsorption, direct growth on the adsorbed substrate under aerobic or anoxic conditions). The modified ASM3 was tested against the results of batch experiments with the biomass originating from two full-scale SAS systems in Germany. The endogenous biomass was mixed with various readily biodegradable substrates (acetate, peptone, glucose and wastewater) and the utilisation of substrate (expresses as COD) and oxygen uptake rates (OURs) were measured during the experiments. In general, model predictions fitted to the experimental data, but a considerable number of kinetic (5) and stoichiometric (2) parameters needed to be adjusted during model calibration. The simulation results revealed that storage was generally a dominating process compared to direct growth in terms of the adsorbed substrate utilisation. The contribution of storage ranged from 65-71% (Plant A) and 69-92% (Plant B).  相似文献   
34.
35.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry  相似文献   
36.
The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.  相似文献   
37.
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.  相似文献   
38.
Self-induced effects in a passive polarization-independent vertical-cavity semiconductor gate are investigated numerically and experimentally. We demonstrate all-optical seed-pulse extraction for synchronization of differential phase-shift keying and ON-OFF keying packets at 10 Gb/s. Our results provide evidence that vertical-cavity gates, exploiting saturable absorption in semiconductor quantum-wells, exhibit attractive performances in terms of efficiency, power consumption, and polarization independency.  相似文献   
39.
This paper provides an overview of the main aspects of modern fluorescence microscopy. It covers the principles of fluorescence and highlights the key discoveries in the history of fluorescence microscopy. The paper also discusses the optics of fluorescence microscopes and examines the various types of detectors. It also discusses the signal and image processing challenges in fluorescence microscopy and highlights some of the present developments and future trends in the field.  相似文献   
40.
In this paper a digital filter is proposed for the generation of smooth set points for motion control systems. The proposed nonlinear filter produces profiles with bounded velocity and acceleration starting from rough reference signals (steps and ramps). An actual implementation of the filter for a tile printing machine is presented and experimental results are reported.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号