钡-硫酸钡重量基准方法研究

为将钡-硫酸钡重量法发展成为可行的基准方法,选定浓度为20mg/g的钡溶液为研究对象,采用重量法与仪器分析相结合,测定溶液中钡含量和各不确定度影响因素的量值,并对测定结果进行了讨论。结果表明重量法与仪器分析相结合,明显改善了测量重复性,提高了测量不确定度,得到扩展不确定度为0.08%(k=2)。     

A survey of efficiency-estimation methods for in-service induction motors

Condition monitoring of electric motors avoids severe economical losses resulting from unexpected motor failures and greatly improves the system reliability and maintainability. Efficiency estimation, which shares many common requirements with condition monitoring in terms of data collections, is expected to be implemented in an integrated product. This brings more considerations into the selection of the efficiency-estimation methods. This paper presents the results of an up-to-date literature survey on efficiency-estimation methods of in-service motors, particularly with considerations of the motor-condition-monitoring requirements. More than 20 of the most commonly used methods are briefly described and classified into nine categories according to their physical properties. Six categories of these methods are more related to in-service testing and are compared in a table summarizing the required tests and measurements, intrusion level, and average accuracy. Estimation of the rotor speed and the stator resistance, the two stumbling blocks of various efficiency-estimation methods, is also carefully studied; commonly used methods are summarized. Based on the survey results, four efficiency-estimation methods are suggested as candidates for nonintrusive in-service motor-efficiency estimation and condition-monitoring applications. Another contribution of this paper is that a general approach for developing nonintrusive motor-efficiency-estimation methods is proposed, incorporating rotor speed, stator resistance, and no-load loss estimations.     

Energy transfer mechanism of GdPO4: RE3+ (RE = Tb, Tm) under VUV-UV excitation

Polycrystal of GdPO₄:RE³⁺ (RE=Tb, Tm) phosphors were prepared by solid-state method. Vacuum ultraviolet excitation and emission spectrum and the energy transfer mechanism between the host and dopants of Tb³⁺ and Tm³⁺ were investigated respectively. The emission of Gd³⁺ at 313 nm was enhanced by the strong absorption of CTS of Tm³⁺ at 180 nm in GdPO₄: Tm. It has also been concluded that the excitation of Gd³⁺ is transferred to Tb³⁺ and then emission peaks of ⁵D_J→⁷F_J of Tb³⁺ were observed.     

恰希玛核电站二期工程核岛基坑降水与回灌技术

恰希玛核电站二期工程核岛基坑降水与回灌，没有可供参考的先例。本文阐述了降水与回灌所经历的过程、改进措施以及最后取得的成果，总结了与回灌技术相关的经验教训，为类似的大型工程提供借鉴。     

Simultaneous all-optical inverted and noninverted wavelength conversion using a single-stage fiber-optical parametric amplifier

We have demonstrated, for the first time to our knowledge, simultaneous all-optical inverted and noninverted wavelength conversion by using a single-stage two-pump fiber-optical parametric amplifier with an extinction ratio between 7 and 14 dB over 24 nm.     

Characteristics of a 12-domain MVA-LCD

A multi-domain (12-domain) vertical alignment liquid crystal display (MVA-LCD) device is proposed and its electro-optic characteristics evaluated through a 3-D simulator. The MVA-LCD exhibits advantages in wide viewing angle, high transmittance, fast response time, and small color shift when a pair of wide view crossed circular polarizers is employed. Potential applications of this MVA-LCD for high quality LCD TVs and computer monitors are emphasized.     

Microstructure evolution of the Sn–Ag–y%Cu interconnect

The lead free Sn–Ag–y%Cu (y = 0.0, 0.5, 1.0 and 2.0) interconnect interfacial microstructures and the microstructure evolution under thermal treatment (isothermal aging, 150 °C/1000 h) were studied in detail by using surface microetching microscopy and cross section microscopy. The corresponding mechanical and reliability behaviors were evaluated by performing shear test and fracture mode analysis before and after the thermal treatment. The results indicate: (i) The interconnects could have different microstructures and intermetallic compound (IMC), depending on the Cu content. The Cu–Sn IMC could have microstructures that were clusters or protrusion-like, Augustine grass leaf-like, scissor-like, tweezers-like, etc. (ii) Ag₃Sn IMCs were not observed at time zero for any interconnect groups, but they occurred after the aging for all groups. The Ag₃Sn IMC could have different microstructures, again depending on Cu content. For low Cu content, the Ag₃Sn IMCs were granules or nodules; for higher Cu content, Ag₃Sn IMCs were plate-like. (iii) The growth of Ag₃Sn plates was promoted by the growth of Cu–Sn IMCs, but indirectly linked to the Cu content. (iv) High Cu content (1.0 wt% and higher) could degrade the mechanical and reliability performances of the LF interconnect by providing a brittle joint, which was mainly achieved through the substantial growth of Cu–Sn IMCs and Ag₃Sn plates.     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

自主协助动态并行I/O调度策略研究

随着处理器速度和网络传输速度的快速提升，I／O成为限制计算机性能的一大瓶颈，并行I／O提供了解决这一问题的有效途径。在并行I／O的实现中，数据访问调度策略对系统的性能有着重要的影响。文章通过对集群计算中现有I／O数据访问调度策略的研究，针对调度器瓶颈问题，提出了自主协助动态I／O调度策略，实验结果表明了所提出策略的有效性。