一个基于启发式经验的立体布局进化策略

目前求解布局问题只能求得近似解,三维布局则更加复杂。本文提出一种基于启发式经验、采用遗传算法求解布局问题的新方法,此方法对任意维布局问题在求解策略上是一致的。实验表明,结合领域知识和遗传算法对解决布局问题具有广泛的前景。     

基于极化不变量的飞机目标识别

基于宽带毫米波极化雷达体制背影，通过极化不变量之一的去极化系数，研究了飞机目标的极化散射特性，并提取了极化特征，设计了飞机目标的分类或识别器结构，它能对五种飞机目标进行有效的分类或识别。     

半导体光开关工作电流和速率的理论分析

本文从载流子连续性方程出发，采用半导体双异质结概念，从理论上推出了计算半导体光波导开关工作电流和速率的理论公式，为器件选取工作电流和提高开关速率提供了理论依据．     

用1／f噪声表征MOSFET的负温偏不稳定性

负温偏不稳定性是ＭＯＳ顺件最重要的可靠问题之一。本文实验上发现ＭＯＳＦＥＴ的Ａ／ｆ噪声与其负温偏不稳定性相关，初始１／ｆ噪声谱密度正比于负温偏应力下的跨导退化量。     

双极晶体管g－r噪声模型与深能级分析

本文根据发射结空间电荷区深能级缺陷诱生ｇ－ｒ噪声机构，建立了双极晶体管ｇ－ｒ噪声定量分析模型，从而对实验上观察到的双极晶体管ｇ－ｒ噪声的偏置特性作出了合理的解释．基于该模型，提出了一种利用ｇ－ｒ噪声测量确定双极型器件深能级参数的新方法．     

真空微电子微波管

本文在扼要地提及真空微电子学的主要进展（如：场发射阵列，场发射显示器和微波毫米波器件等）后，主要叙述了发展真空微电子微波管的主要内容，问题及其意义，场发射阵列的三个重要特点（冷阴极，高发射能力和栅极控制）可用于发展新一代的高频率，高效率，高功率，超小型和长寿命的面向２１世纪的高性能微波管：真空微电子微波管，双栅极场发射阵列，电子流的形成与维持，与其相匹配的互作用电路，特殊的器件结构和相关的制管工艺     

Noncoherent hybrid parallel PN code acquisition for CDMA mobilecommunications

This paper proposes a noncoherent hybrid parallel pseudonoise (PN) code acquisition scheme for code-division multiple access (CDMA) mobile communication systems and analyzes the effect of multiple access interference (MAI) on the code acquisition performance for Rayleigh and Rician fading channels. The hybrid acquisition scheme combines parallel search with serial search to cover the whole uncertainty region of the input code phase. It has a much simpler acquisition hardware structure than the total parallel acquisition and can achieve the mean acquisition time slightly inferior to that of the total parallel acquisition in the case of severe MAI; on the other hand, it provides the flexibility in the tradeoff between the mean acquisition time and system complexity if no MAI is considered. The closed-form expressions of the detection and false-alarm probabilities and mean acquisition time are derived. Numerical analysis quantifies the severe performance degradation of code acquisition due to both MAI and channel fading, and demonstrates the dependence of the increase of mean acquisition time (due to MAI) on the number of users in the CDMA system, system design parameters, and channel fading statistics     

MCT液相外延薄膜的生长和特性

用开管水平液相外延系统从富Te溶剂中生长了不同x值的MCT薄膜。经X射线衍射、Hall电学参数、红外光谱、扫描电镜、X射线能谱仪和电子通道花样分析测试,结果表明:外延薄膜表面平整,光学参数较好,纵向、横向组份均匀,晶体结构完整,电学参数较好,外延膜质量优良。短波材料(n型):载流子浓度3.54×10~(14)cm~(-3),迁移率1.63×10~4cm~2V~(-1)s~(-1);中波材料(n型):载流子浓度9.95×10~(14)cm~(-3),迁移率为1.76×10~4cm~2V~(-1)s~(-1);原生长波材料(n型):载流子浓度为2.15×10~(15)cm~(-3),迁移率2.00×10~4cm~2V~(-1)s~(-1)。     

介质膜技术在半导体激光器中的应用(一)——改变阈值电流,提高外量子效率与最大输出功率

本文从理论上分析了介质膜对半导体激光器外特性如阈值电流、外量子效率和最大输出功率等的影响。实验研究结果也表明腔镜镀膜技术能有效地改善半导体激光器的输出特性,且工艺简便,较之设计研制新结构容易实现。     

Correlation between 1/f noise and hFElong-term instability in silicon bipolar devices

Accelerated life tests with high-temperature storage and electric aging for n⁺-p-n silicon planar transistors were carried out. Current gain h_FE increases monotonously with time during the tests, and the h_FE drift is correlated with initial measured 1/f noise in the transistors, i.e. the drift amount significantly increases with the increase of noise level. The correlation coefficient of relative drift Δh_FE /h_FE and 1/f noise spectral density S_iB(f) is far larger than that of Δ h_FE/h_FE and initial DC parameters of the transistors. A quantitative theory model for the h _FE drift has been developed and explains the h _FE drift behavior in the tests, which suggests that the h _FE drift and 1/f noise can be attributed to the same physical origin, and both are caused by the modulation of the oxide traps near the Si-SiO₂ interface to Si surface recombination. 1/f noise measurement, therefore, may be used as a fast and nondestructive means to predict the long-term instability in bipolar transistors