Nanocell logic gates for molecular computing

Molecular electronics seeks to build electrical devices to implement computation - logic and memory - using individual or small collections of molecules. These devices have the potential to reduce device size and fabrication costs, by several orders of magnitude, relative to conventional CMOS. However, the construction of a practical molecular computer will require the molecular switches and their related interconnect technologies to behave as large-scale diverse logic, with input/output wires scaled to molecular dimensions. It is unclear whether it is necessary or even. possible to control the precise regular placement and interconnection of these diminutive molecular systems. This paper describes genetic algorithm-based simulations of molecular device structures in a nanocell where placement and connectivity of the internal molecular switches are not specifically directed and the internal topology is generally disordered. With some simplifying assumptions, these results show that it is possible to use easily fabricated nanocells as logic devices by setting the internal molecular switch states after the topological molecular assembly is complete. Simulated logic devices include an inverter, a NAND gate, an XOR gate and a 1-bit adder. Issues of defect and fault tolerance are addressed.     

Cluster analysis in industrial market segmentation through artificial neural network

Market segmentation has commonly applied cluster analysis. This study intends to make the comparison of conventional two-stage method with proposed two-stage method through the simulated data. The proposed two-stage method is the combination of self-organizing feature maps and K-means method. The simulation results show that the proposed scheme is better than the conventional two-stage method based on the rate of misclassification.     

Transformed Estimates of Densities of Heavy-Tailed Distributions and Classification

Nonparametric estimation of the density of a heavy-tailed probability distribution is investigated. The initial data are transformed to a bounded interval and the distribution density is determined by an inverse transformation of the distribution density estimate of transformed data. An adaptive data transformation is studied, in which the order of decay of the tail of the true distribution density is preserved and stable estimation of the deviation in tail index estimates is guaranteed. In classification, the empirical risk of erroneous classification by the Bayes empirical classifier is used as a measure for the quality of distribution density estimates.     

Unique ESD failure mechanisms during negative to Vcc HBM tests

HBM ESD tests on two types of 0.6 μm DRAM devices showed that internal circuit or output driver failures would occur after the input or I/O pins were ESD stressed negative with respect to Vcc at ground. These failures occurred at lower than expected ESD stress voltages due to power-up circuit interactions that either turned-on unique internal parasitic ESD current paths or disrupted the normal operation of the output pin’s ESD protection circuit. ESD analysis found there exists a set of power-up sensitive circuits and if placed near a Vcc bond pad can result in low voltage ESD failures.     

ROLE OF COMPOSITION ON THE VISCOSITY AND SHEAR STRESS TEMPERATURE BEHAVIOUR OF SOME LUBE OIL BASE STOCKS

Lubricating oil base stocks differ greatly in their chemical composition and consequently in their physical properties and applications. Influence of waxes and various hydrocarbon type constituents viz saturates and aromatic components on the viscosity and shear stress as a function of temperature in different lube oil base stocks has been studied in the present paper.     

Analysis of intensity interference caused by cross-phase modulationin dispersive optical fibers

Under a set of broadly justified simplifying assumptions, an analytical approach to the problem of cross phase modulation in optical fibers is presented. Simple analytical expressions describing intensity interference caused by cross-phase modulation (XPM) are derived. It turns out that within a physically realizable range of parameters the power penalties induced by XPM have a linear dependence on the power of the interfering signal. Examples of specific systems are presented and discussed     

Baseband Volterra filters for implementing carrier basednonlinearities

A diagonal coordinate representation for Volterra filters is developed and exploited to derive efficient Volterra filter implementations for processing carrier based input signals. In the diagonal coordinate representation, the output is expressed as a sum of linear filters applied to modified input signals. Hence, linear filtering methods are employed to implement the nonlinear filter on a baseband version of the input. Downsampling is then used to reduce computational complexity. The same approach is employed to develop efficient implementations for processing continuous-time carrier-based signals, pulse amplitude-modulated signals, and frequency division multiplexed input signals     

A versatile leaky-wave antenna based on stub-loaded rectangularwaveguide .III. Comparisons with measurements

For pt.II ibid., vol.46, no.7, p.1042-46. The article describes the measurements that verify the validity of the theoretical expressions for this new type of antenna. Measurements were made both at millimeter wavelengths (40 to 60 GHz) and in the X-band (8 to 12 GHz) frequency range and of two different quantities: the propagation wavenumbers β and α and radiation patterns. Comparisons were made with numerical values obtained from the theoretical expressions derived in parts I and II and very good agreement was found in all cases     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.