Reducible rank codes and their applications to cryptography

We present a new family of so-called reducible rank codes which are a generalization of rank product codes . This family includes maximal rank distance (MRD) codes for lengths n>N in the field F/sub N/. We give methods for encoding and decoding reducible rank codes. A public key cryptosystem based on these codes and on the idea of a column scrambler is proposed. The column scrambler "mixes" columns of a generator (parity-check) matrix of a code. It makes the system more resistant to structural attacks such as Gibson's attacks. Possible attacks on the system are thoroughly studied. The system is found to be secure against known attacks for public keys of about 16 kbits and greater.     

A multiwinding modeling method for high frequency transformers and inductors

This paper presents a method to obtain an electric model for transformers and inductors, including both frequency and geometry effects in the windings, which can be linked with existing core models. One-dimensional distributions for magnetic and electric fields are assumed, and from Maxwell's equations an equivalent electric circuit is easily obtained. This equivalent circuit has been included in analog simulators (Spice, AnalogWorkBench, Saber ...), and comparisons between measured and simulated results are shown, both in time domain and in AC sweep, which verify the model accuracy. The model described in this paper allows designers to deal with key issues in the design of high-frequency magnetic components (copper losses, leakage inductance, skin and proximity effects) by using analog simulators, which are usually more familiar to them than finite-element analysis tools.     

伊朗卡尔黑水利枢纽

伊朗卡尔黑多目标水利枢纽，首台机组于2002年9月投运。介绍了工程历史，并从导流系统遂洪道、渗漏控制和惟幕灌浆等方面介绍了工程的技术要求。     

Extracting Light from Polymer Light‐Emitting Diodes Using Stamped Bragg Gratings

In this paper, we describe a method for increasing the external efficiency of polymer light‐emitting diodes (LEDs) by coupling out waveguided light with Bragg gratings. We numerically model the waveguide modes in a typical LED structure and demonstrate how optimizing layer thicknesses and reducing waveguide absorption can enhance the grating outcoupling. The gratings were created by a soft‐lithography technique that minimizes changes to the conventional LED structure. Using one‐dimensional and two‐dimensional gratings, we were able to increase the forward‐directed emission by 47 % and 70 %, respectively, and the external quantum efficiency by 15 % and 25 %.     

Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).     

Learning in multiple model adaptive control switch

Including a learning mechanism in SMMAC (switched, multiple-model adaptive control) avoids the need for a priori knowledge of the model set of the plant to control and leads to a significant performance improvement with respect to the sole inclusion of an adaptive control channel in combination with switched fixed local controllers.     

Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.