CoGaInS4: A new layered compound

We report on the synthesis results obtained for some compositions in the Co(GaxIn_1-x)₂S₄ family, whose intermediate member CoGaInS₄ is shown to display a layered structure. This result is discussed and compared with the literature.     

DRYING OF GRANULAR PARTICLES IN A MULTISTAGE INCLINED FLUIDIZED BED WITH MECHANICAL VIBRATION

A mathematical model for the drying rate of granular particles in a multistage inclined fluidized bed(IFB) is presented from the standpoint of simultaneous heat and mass transfer, with taking the effect of mechanical vibration added vertically into consideration.

Steady-state distributions for the temperatures and concentrations of the particles and the heating gas, and for the moisture content of the particles are numerically calculated based on the present model. The calculated results show fairly good agreement with the experimental data, which were obtained from the drying experiments of brick particles in a three-stage IFB using comparatively low temperature air(40-60°C) as the heating gas.

It has been found within the range of the experimental conditions employed that, the mechanical vibration added vertically enhances the over-all drying rate of the particles and its effect can be considered equivalent to an increase in the air velocity.     

Segregation in sputtered Co-Cr films

The segregation growth process in sputtered Co-Cr films is investigated by examining the effect of substrate temperature on the segregated microstructure and magnetic properties. In sputtered Co-25at%Cr films, segregation occurs below 560°C, and both the saturation magnetization and the perpendicular anisotropy constant show a maximum around a substrate temperature of 300°C, where a specific microstructure, called a CP (chrysanthemum-like pattern) structure, is observed. The results suggest that the CP structure becomes observable in the highly segregated state and generates high perpendicular anisotropy. A new segregation growth model is derived from the results of the CP structure observations. Using this model, it is possible to explain the continuous transition of the magnetization mode between the continuous and the particulate modes.     

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer.