Crosstalk between microstrip transmission lines

Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk     

High-frequency analysis of the Ellipticus antenna

Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz     

Microscopic simulation of electronic noise in semiconductormaterials and devices

We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n⁺nn ⁺ structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices     

1/f noise sources

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10^-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices     

Localization of deformation and its effect on the course of processes of pressure working metals

The author examines the problems of spontaneous and stationary localization of deformation on the development of plastic yielding in pressure working of metals. It is established that localization of plastic yielding results in the dispersion of the geometrical dimensions, structure, texture and properties, and also in changes in their general level. Possible methods of affecting the deformation region are discussed with special reference to controlling the development of localization of plastic yielding and properties of the component.Translated from Problemy Prochnosti, No. 2, pp. 89–92, February, 1994.     

New version of an instrument for measuring the sun's height by means of a ring laser

An instrument is proposed for continuously tracking the Sun and measuring its height by the use of a laser gyrometer as measuring converter. The accuracy in photoelectric sighting on the Sun is improved by greatly reducing the light fluxes to be compared by screening out the central part of the Sun's image in the focal plane. Translated from Izmeritel'naya Tekhnika, No. 3, pp. 7–9, March, 1994.     

Metal diffraction gratings as laser power or energy dividers

The authors survey published results on the application of metal diffraction gratings as laser power or energy dividers when the laser beam is split into two approximately equal pans. The normal incidence of laser radiation on metal diffraction gratings of various profiles in the case of three propagating diffraction orders n=0, ±1 is discussed, along with the case of oblique incidence with only two propagating diffraction orders n=0 and n =–1.Translated from Izmeritel'naya Tekhnika, No. 2, pp. 22–26, February, 1994.     

Effects of error variation in means of measurement on reliability parameters in engineering-system monitoring

A method is given for calculating the monitoring reliability parameters (MRP) for an engineering system with allowance for the drift in the measurement error of the means of measurement (MM). The approach is based on introducing a biased MM error distribution into the traditional formulas for the conditional probabilities of spurious and unobserved failure. The bias at the center of the distribution is determined by the systematic error at the given instant. An example is given to illustrate the performance in MRP calculation.Translated from Izmeritel'naya Tekhnika, No. 1, pp. 12–13, January, 1994.