Mandela on tour with ISES

Dr Maki Mandela, Executive Manager of Corporate Services at the Development Bank of Southern Africa (DBSA; www.dbsa.org), visited the International Solar Energy Society (ISES) in June and was taken on a five-day RE fact-finding mission of Europe. The trip was unofficial; not representing the DBSA and the sole aim was to gather information to take back to DBSA to help increase the prominence of RE policies and initiatives within the DBSA, and hence in Southern Africa.     

Microscopic study on the polymorphism of Ca3SiO5

The polymorphism of Ca₃SiO₅ has been studied microscopically by following changes in optic properties and modes of twinning of the crystal as a function of temperature. Besides the six modifications already established, a hitherto-unidentified monoclinic phase M₃, which can be characterized only by microscopy at present, has been found to exist just below the rhombohedral phase (R). The transitions $\text{T}{}_2\text{?}\text{T}{}_3\text{et}\text{M}{}_1\text{?}\text{M}{}_2$ that give clear thermal effects on the DTA curve show no corresponding change under the microscope.     

Planar textures in superfluid 3He-A

Making use of the Ginzburg-Landau free energy, singularities such as disgyrations and vortex lines and stable textures in the planar (or two-dimensional) texture are studied. Here both % MathType!MTEF!2!1!+-% feaafeart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqaqpepeea0xe9qqVa0l% b9peea0lb9sq-JfrVkFHe9peea0dXdarVe0Fb9pgea0xa9pue9Fve9% Ffc8meGabaqaciGacaGaaeqabaWaaeaaeaaakeaaieqaceWFSbGbaK% aaaaa!3883!\[{\hat l}\] and % MathType!MTEF!2!1!+-% feaafeart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqaqpepeea0xe9qqVa0l% b9peea0lb9sq-JfrVkFHe9peea0dXdarVe0Fb9pgea0xa9pue9Fve9% Ffc8meGabaqaciGacaGaaeqabaWaaeaaeaaakeaaieqaceWFKbGbaK% aaaaa!387B!\[{\hat d}\] vectors, characterizing the texture in ³He-A, are assumed parallel to each other and lie always in a plane. The dynamics of disgyrations is also considered.Work supported by the National Science Foundation under grant number DMR76-21032.     

Tracking a Sea Turtle by an AUV with a Multibeam Imaging Sonar: Toward Robotic Observation of Marine Life

International Journal of Control, Automation and Systems - This paper proposes a method for autonomous underwater vehicles to chase sea turtles without attaching any tag to them, toward efficient...     

Thermal Conductivity of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Affected by Grain Size and Pores

A fine measurement system for measuring thermal conductivity was constructed. An accuracy of 1% was determined for the reference quartz with a value of 1.411 W/m K. Bi_0.5Sb_1.5Te₃ samples were prepared by mechanical alloying followed by hot-pressing. Grain sizes were varied in the range from 1 μm to 10 μm by controlling the sintering temperature in the temperature range from 623 K to 773 K. The thermal conductivity was 0.89 W/m K for the sample sintered at 623 K, while a grain size of 1.75 μm was measured by optical microscopy and scanning electron microscopy. The thermal conductivity increased on the sample sintered at 673 K because of grain growth and decreased on those sintered at the temperatures from 673 K to 773 K because the increase of pore size caused to decrease thermal conductivity. The increase of thermal conductivity for the samples sintered at temperatures above 773 K was affected by the increase of carrier concentration.     

A 500-MHz pipelined burst SRAM with improved SER immunity

This paper describes a 0.25-μm, 64 K×36 bit pipelined burst SRAM using a 6.156-μm² cell. It realizes over 500-MHz operation using a lower cost double metal process, Internal 16 K×144 organization by T-shaped bit line array reduces 20% of latency, 20% of active power, and 8.5% of die size. The low power also enables us to use lower cost thin quad flat type packages. Our solution to the soft error problem, a shallow triple well structure and four-transistor cell with stacked capacitor, improved soft error rate by 3.5 orders of magnitude compared with the conventional SRAM cell