Surface Hardening of Carbon Steel Using High Powered YAG Laser

A high powered YAG laser with kaleidoscope for surface modification was applied to the surface hardening of carbon steels containing 0. 18-0.54 wt% C without the absorbents, and the relationships between laser processing and surface hardening were investigated by hardness and microstructure. The structure of the hardened zone underwent complete martensitic transformation in all of the carbon steels tested, and its hardness increased with greater carbon content. Under identical irradiated conditions, the hardened zone expanded with increasing carbon content. A hardened zone extending from the surface to a depth of 1.0 mm was obtained at a laser power of 1.0 kW and a scanning speed of 1 mm/sec. It was found that in the surface hardening of carbon steels, a high powered YAG laser can be used to control the hardened zone by selecting the appropriate irradiation conditions, however, the hardened zone was affected by the assistant gas and the flow rate.     

Intelligent manipulator system with nonsymmetric and redundant master-slave

Some work is so complicated and unsteady that it is not possible to use automatic robots, such as FA robots. In such a case, a teleoperated manipulation system is applied. In this research, the authors aim at a reduction in the operator's physical and mental burdens. An artificially intelligent manipulator system has been developed with nonsymmetric and redundant master-slave. This system has five features: (1) a polar coordinates master arm; (2) a highly operational articulated slave arm with 7 degrees of freedom; (3) a nonsymmetric configuration and different degrees of freedom master-slave control; (4) an expert system; and (5) a new master-slave control motion, which makes the operator's task easier with automatic force/position control. The system was experimentally produced and its performance tested and evaluated. A qualitative evaluation was carried out by conducting a comparative test on the conventional master-slave control and the new master-slave control. It was found to be effective in reducing operating time, as well as work-induced fatigue.     

Transmission and attenuation of the dominant mode in uniformly bentcircular hollow waveguides for the infrared: scalar analysis

A numerical evaluation is conducted of electric field distributions, phase constants, and attenuation constants of the lowest eigenmode in the general class of uniformly bent circular hollow waveguides. The analysis is based on a scalar equation, and numerical results are compared with those of existing approximate theories. Normalized forms of attenuation constants are presented for the parallel and perpendicular polarizations to the bending plane by using structural and material parameters. For sharply bent waveguides, useful and simple expressions are derived for the attenuation constants of the TE and TM modes in the corresponding slab geometry with suitable weighting parameters     

Ultrahigh-speed HEMT LSI technology for supercomputer

The current status of high electron mobility transistor (HEMT) technology at Fujitsu for high-performance VLSI is presented, focusing on device performance in the submicrometer dimensional range and the HEMT LSIs implemented in supercomputer systems. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. A 1.1 K-gate bus-driver logic LSI has been developed to demonstrate the high-speed data transfer in a high-speed parallel processing system at room temperature, operating at 10.92 GFLOPS. A cryogenic 3.3 K-gate random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate the high-clock-rate system operations at liquid-nitrogen temperature. For VLSI level complexity, a HEMT 64-kb static RAM with 1.2-ns access operation and a 45 K-gate gate array with 35-ps logic delay have been developed operating at room temperature, demonstrating the high performance required for future high-speed computer systems     

AP的安全制备（英）

1 IntroductionThe ammonium perchlorate ( AP)-based compositepropellant is currently the most widely used one becausethis propellant has good burning characteristics and me-chanical properties. One of the few serious drawbacks ofthe AP-based propellant is that its products of combus-tion, which include HCl, chlorine, and chlorine oxides,cause atmospheric pollution. Increasing concern for aclean atmosphere in recent years has resulted in a com-pelling need for developing a chlorine-free,enviro…     

Dynamics of Vortex Lattice Formation in a Rotating Bose-Einstein Condensate with an Optical Lattice Potential

We study dynamics of quantized vortex lattice formation in a rotating Bose-Einstein condensate with a square blue-detuned optical lattice by solving the Gross-Pitaevskii equation. This dynamics depends on the depth of the optical lattice. Vortices tend to form a triangular lattice under the rotation, while an optical lattice likes to pin vortices at their peaks. Such a competition of two effects makes this system more interesting and complicated.     

Collective Shape Oscillation and Domain Formation of Two-Component Bose–Einstein Condensates

In this paper, we describe two kinds of characteristic nonlinear dynamics in two-component Bose–Einstein condensates. For two overlapping components, we analyzed the collective modes and a variety of nonlinear mode couplings, which were then confirmed by numerical simulation of the time-dependent Gross–Pitaevskii equations. Next, we consider the nonlinear dynamics of two condensates after abruptly turning on the intercomponent coupling strength. For strong intercomponent interactions the out-of-phase density wave of the condensates became unstable, leading to mugtiple domain formation.     

Reduction of the off-state current of polysilicon thin-filmtransistors by means of a polysilicon buffer layer

The off state current for polysilicon thin-film transistors for pixels in LCDs has been successfully reduced by introducing a polysilicon buffer layer between a polysilicon active layer fabricated by solid-phase-crystallisation (SPC) and a fused quartz substrate. Off-slate current of less than 1 pA under V_gs=-25 V at V_ds=3 V was obtained for n-channel single-gate coplanar transistors using the buffer layer (400 Å)