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81.
This paper investigates the operation of four space vector-based synchronized pulse-width modulation (PWM) strategies in the overmodulation zone using three different overmodulation algorithms. It is shown that the symmetries in the PWM waveforms generated can be preserved in the overmodulation zone also. With any given overmodulation algorithm, the voltage control characteristics (i.e., fundamental voltage versus control variable) are found to vary with PWM strategy, pulse number and type of clamping. The inverse of the appropriate voltage control curve is used during premodulation to maintain the modulator gain constant. The differences in the nature of the voltage control characteristics with the different overmodulation algorithms are brought out. These characteristics are compared and contrasted against those at high switching frequencies. The harmonic distortion in the different cases is evaluated and compared. It is shown that the bus clamping strategies perform better than the conventional strategy with any given overmodulation algorithm employed. These strategies, which exploit the flexibilities in the space vector approach, are useful in high power drives on account of their superior waveform quality at low switching frequencies and high DC bus utilization.  相似文献   
82.
Object-oriented programming (OOP) has been revolutionizing software development and maintenance. When applied to simulation of manufacturing systems, OOP also provides an opportunity for developing new ways of thinking and modeling. In this paper, we identify existing large-scale, persistent OOP-based research efforts focusing on manufacturing system simulation, and present an integrating framework for discussing the associated modeling abstractions, implementation strategies, common themes, and distinctive features. The goal is to identify the fundamental research and application issues, assess the current state of the art, and identify key research needs.  相似文献   
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85.
Metal nanocrystal memories-part II: electrical characteristics   总被引:3,自引:0,他引:3  
This paper describes the electrical characteristics of the metal nanocrystal memory devices continued from the previous paper [see ibid., vol. 49, p. 1606-13, Sept. 2002]. Devices with Au, Ag, and Pt nanocrystals working in the F-N tunneling regime have been investigated and compared with Si nanocrystal memory devices. With hot-carrier injection such as the programming mechanism, retention time up to 106 s has been observed and 2-bit-per-cell storage capability has been demonstrated and analyzed. The concern of the possible metal contamination is also addressed by current-voltage (I-V) and capacitance-voltage (C-V) characterizations. The extracted inversion layer mobility and minority carrier lifetime suggest that the substrate is free from metal contamination with continuous operations  相似文献   
86.
Ingraffea et al.[1] have presented a consistent method to compute stress-intensity factors from wedge quarter-point element nodal displacements for the straight crack front. The method was generalized to permit functional evaluation of stress-intensity factors along the crack front. Here the method is generalized for curved crack fronts.  相似文献   
87.
In preparing specimens for studying reaction kinetics, it is essential to ensure proper contact between couple end-members. In the present work, reaction couples were prepared by spraying layers of the end-member materials over one another. This method has many advantages, including precise control over the properties of the end-members.  相似文献   
88.
We have used the theory of self adjoint operators to derive a number of useful differential inequalities for thermohaline convection in containers. Variation of critical eigenvalues with boundary conditions, domain size and fluid properties is shown. Exchange of stabilities is assumed in general but is shown to be always true for the case of fluids, which are salted above and heated below. The differential inequalities are useful to obtain first order effects of the various parameters on the critical eigenvalues.  相似文献   
89.
Self-assembled magnetic colloidal suspensions are sought after by material scientists owing to its huge application potential. The biomedical applications of colloidal nanoparticles necessitate that they are biocompatible, non-interacting, monodispersed and hence the synthesis of such nanostructures has great relevance in the realm of nanoscience. Silica-coated superparamagnetic iron oxide nanoparticles based ferrofluids were prepared using polyethylene glycol as carrier fluid by employing a controlled co-precipitation technique followed by a modified sol-gel synthesis. A plausible mechanism for the formation of stable suspension of SiO2-coated Iron Oxide nanoparticles with a size of about 9 nm dispersed in polyethylene glycol (PEG) is proposed. Core-shell nature of the resultant SiO2-Iron Oxide nanocomposite was verified using transmission electron microscopy. Fourier transform-infrared spectroscopy studies were carried out to understand the structure and nature of chemical bonds. The result suggests that Iron Oxide exist in an isolated state inside silica matrix. Moreover, the presence of silanol bonds establishes the hydrophilic nature of silica shell confirming the formation of stable ferrofluid with PEG as carrier fluid. The magnetic characterization reveals the superparamagnetic behavior of the nanoparticles with a rather narrow distribution of blocking temperatures. These properties are not seen in ferrofluids prepared from Iron Oxide nanoparticles without SiO2 coating. The latter suggests the successful tuning of the inter-particle interactions preventing agglomeration of nanoparticles. Cytotoxicity studies on citric acid coated water based ferrofluid and silica-coated PEG-based ferrofluid were evaluated by 3-(4,5-dimethylthiazole-2-yl)-2,5-diphenyltetrazolium chloride assay and it shows an enhanced compatibility for silica modified nanoparticles.  相似文献   
90.
Today’s analog/RF design and verification face significant challenges due to circuit complexity, process variations and short market windows. In particular, the influence of technology parameters on circuits, and the issues related to noise modeling and verification still remain a priority for many applications. Noise could be due to unwanted interaction between the circuit elements or it could be inherited from the circuit elements. In addition, manufacturing disparity influence the characteristic behavior of the manufactured circuits. In this paper, we propose a methodology for modeling and verification of analog/RF designs in the presence of noise and process variations. Our approach is based on modeling the designs using stochastic differential equations (SDE) that will allow us to incorporate the statistical nature of noise. We also integrate the device variation due to 0.18μ m fabrication process in an SDE based simulation framework for monitoring properties of interest in order to quickly detect errors. Our approach is illustrated on nonlinear Tunnel-Diode and a Colpitts oscillator circuits.  相似文献   
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