Mapping of Discrete Cosine Transforms onto Distributed Hardware Architectures

We present an algorithmically-aware, high-level partitioning methodology for discrete cosine transforms (DCT) targeted to distributed hardware architectures. The methodology relies on the exploration of alternate DCT formulations as part of the partition optimization process. To the best of our knowledge, no previously proposed DCT algorithm exists that is capable of consistently producing alternate regular formulations for an n-size DCT. Hence, a new Cooley-Tukey-like DCT factorization algorithm was developed to allow exploration of alternate formulations as part of the partitioning optimization process. The use of our factorization mechanism along with a greedy strategy to explore the space of equivalent DCT formulations yielded partitioning solutions with as much as 18% reduction in latency and 83% reduction in run-time as compared to previously proposed regular DCT formulations.

Analog circuits optimization based on evolutionary computation techniques

This paper presents a new design automation tool, based on a modified genetic algorithm kernel, in order to improve efficiency on the analog IC design cycle. The proposed approach combines a robust optimization with corner analysis, machine learning techniques and distributed processing capability able to deal with multi-objective and constrained optimization problems. The resulting optimization tool and the improvement in design productivity is demonstrated for the design of CMOS operational amplifiers.     

The effect of small-signal AC voltages on C–V characterization and parameter extraction of SiO2 thin films

The effect of different small-signal ac voltage amplitudes on C–V curves characterized by thin SiO₂ based p-type MOS capacitor with aluminum gate is reported. When the small-signal ac voltage is comparable to the gate bias, the thickness of SiO₂ thin films extracted from the accumulation capacitance is found to be independent of small-signal ac voltage amplitudes, but the flat band voltage shift and interface state density associated with the variation of depletion layer capacitance are dependent on small-signal ac voltage amplitudes. They all increase with the small-signal ac voltage amplitudes. The experimental results reveal that the optimum small-signal ac voltage should be less than 100 mV. The mechanisms involving the depletion layer changes with small-signal ac voltages in SiO₂ thin films are also discussed in this paper.     

Computer Simulations of VANETs Using Realistic City Topologies

Researchers in vehicular ad hoc networks (VANETs) commonly use simulation to test new algorithms and techniques. This is the case because of the high cost and labor involved in deploying and testing vehicles in real outdoor scenarios. However, when determining the factors that should be taken into account in these simulations, some factors such as realistic road topologies and presence of obstacles are rarely addressed. In this paper, we first evaluate the packet error rate (PER) through actual measurements in an outdoor road scenario, and deduce a close model of the PER for VANETs. Secondly, we introduce a topology-based visibility scheme such that road dimension and geometry can be accounted for, in addition to line-of-sight. We then combine these factors to determine when warning messages (i.e., messages that warn drivers of danger and hazards) are successfully received in a VANET. Through extensive simulations using different road topologies, city maps, and visibility schemes, we show these factors can impact warning message dissemination time and packet delivery rate.     

Retarding Thermal Degradation in Hybrid Perovskites by Ionic Liquid Additives

Recent years have witnessed considerable progress in the development of solar cells based on lead halide perovskite materials. However, their intrinsic instability remains a limitation. In this context, the interplay between the thermal degradation and the hydrophobicity of perovskite materials is investigated. To this end, the salt 1‐(4‐ethenylbenzyl)‐3‐(3,3,4,4,5,5,6,6,7,7,8,8,8‐tridecafluorooctylimidazolium iodide (ETI), is employed as an additive in hybrid perovskites, endowing the photoactive materials with high thermal stability and hydrophobicity. The ETI additive inhibits methylammonium (MA) permeation in methylammonium lead triiodide (MAPbI₃) occurring due to intrinsic thermal degradation, by inhibiting out‐diffusion of the MA⁺ cation, preserving the pristine material and preventing decomposition. With this simple approach, high efficiency solar cells based on the unstable MAPbI₃ perovskite are markedly stabilized under maximum power point tracking, leading to greater than twice the preserved efficiency after 700 h of continuous light illumination and heating (60 °C). These results suggest a strategy to tackle the intrinsic thermal decomposition of MAI, an essential component in all state‐of‐the‐art perovskite compositions.     

Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO3 Multiferroic Films

Domain switching pathways fundamentally control performance in ferroelectric thin film devices. In epitaxial bismuth ferrite (BiFeO₃) films, the domain morphology is known to influence the multiferroic orders. While both striped and mosaic domains have been observed, the origins of the latter have remained unclear. Here, it is shown that domain morphology is defined by the strain profile across the film–substrate interface. In samples with mosaic domains, X‐ray diffraction analysis reveals strong strain gradients, while geometric phase analysis using scanning transmission electron microscopy finds that within 5 nm of the film–substrate interface, the out‐of‐plane strain shows an anomalous dip while the in‐plane strain is constant. Conversely, if uniform strain is maintained across the interface with zero strain gradient, striped domains are formed. Critically, an ex situ thermal treatment, which eliminates the interfacial strain gradient, converts the domains from mosaic to striped. The antiferromagnetic state of the BiFeO₃ is also influenced by the domain structure, whereby the mosaic domains disrupt the long‐range spin cycloid. This work demonstrates that atomic scale tuning of interfacial strain gradients is a powerful route to manipulate the global multiferroic orders in epitaxial films.     

Analysis of delay mean and variance of collision-free WDM rings with segment recirculation of blocked traffic

In Tunable-Transmitter Fixed-Receiver (TT-FR)-based Wavelength Division Multiplexed (WDM) ring topologies, each node is provided with a dedicated wavelength (home channel) for reception, which must be shared by the upstream nodes willing to communicate with it. Thus, to avoid channel collisions, it is necessary to define a Medium Access Control (MAC) mechanism that arbitrates access to a given destination wavelength. This work proposes and analyses a simple MAC mechanism that avoids channel collisions by recirculating traffic on the upstream ring segment where congestion was detected. Essentially, whenever a given node has got any traffic to transmit, it must first block access to in-transit traffic, which is reflected back to the upstream node over a second optical fibre. Such blocked traffic is given a second chance to pass through the congested node after a round segment delay, thus making use of the ring topology as buffering units. This work analyses the performance operation of such a MAC protocol under two policies applied to recirculated traffic: (1) recirculation bypass and (2) recirculation store-and-forward.     

Avalanche‐Discharge‐Induced Electrical Forming in Tantalum Oxide‐Based Metal–Insulator–Metal Structures

Oxide‐based metal–insulator–metal structures are of special interest for future resistive random‐access memories. In such cells, redox processes on the nanoscale occur during resistive switching, which are initiated by the reversible movement of native donors, such as oxygen vacancies. The formation of these filaments is mainly attributed to an enhanced oxygen diffusion due to Joule heating in an electric field or due to electrical breakdown. Here, the development of a dendrite‐like structure, which is induced by an avalanche discharge between the top electrode and the Ta₂O_5‐x layer, is presented, which occurs instead of a local breakdown between top and bottom electrode. The dendrite‐like structure evolves primarily at structures with a pronounced interface adsorbate layer. Furthermore, local conductive atomic force microscopy reveals that the entire dendrite region becomes conductive. Via spectromicroscopy it is demonstrated that the subsequent switching is caused by a valence change between Ta⁴⁺ and Ta⁵⁺, which takes place over the entire former Pt/Ta₂O_5‐x interface of the dendrite‐like structure.     

Understanding of the annealing temperature impact on ion implanted bifacial n‐type solar cells to reach 20.3% efficiency

Ion implantation has the advantage of being a unidirectional doping technique. Unlike gaseous diffusion, this characteristic highlights strong possibilities to simplify solar cell process flows. The use of ion implantation doping for n‐type PERT bifacial solar cells is a promising process, but mainly if it goes with a unique co‐annealing step to activate both dopants and to grow a SiO₂ passivation layer. To develop this process and our SONIA cells, we studied the impact of the annealing temperature and that of the passivation layers on the electrical quality of the implanted B‐emitter and P‐BSF. A high annealing temperature (above 1000 °C) was necessary to fully activate the boron atoms and to anneal the implantation damages. Low J_0BSF (BSF contribution to the saturation current density) of 180 fA/cm² was reached at this high temperature with the best SiO₂ passivation layer. An average efficiency of 19.7% was reached using this simplified process flow (“co‐anneal process”) on large area (239 cm²) Cz solar cells. The efficiency was limited by a low FF, probably due to contaminations by metallization pastes. Improved performances were achieved in the case of a “separated anneals” process where the P‐BSF is activated at a lower temperature range. An average efficiency of 20.2% was obtained in this case, with a 20.3% certified cell. Copyright © 2014 John Wiley & Sons, Ltd.     

Robust Single Molecule Magnet Monolayers on Graphene and Graphite with Magnetic Hysteresis up to 28 K

The chemical functionalization of fullerene single molecule magnet Tb₂@C₈₀(CH₂Ph) enables the facile preparation of robust monolayers on graphene and highly oriented pyrolytic graphite from solution without impairing their magnetic properties. Monolayers of endohedral fullerene functionalized with pyrene exhibit magnetic bistability up to a temperature of 28 K. The use of pyrene terminated linker molecules opens the way to devise integration of spin carrying units encapsulated by fullerene cages on graphitic substrates, be it single-molecule magnets or qubit candidates.