离子静电水处理技术在循环冷却水中的应用

简要介绍了离子静电水处理技术杀菌、灭藻、防垢阻垢的机理，及在循环冷却水系统中的应用情况。     

Focal segmental glomerulosclerosis in primates infected with a simian immunodeficiency virus

Focal and segmental glomerulosclerosis (FSG) with endothelial tubuloreticular inclusions (TRIs) is the typical lesion of human HIV-associated glomerulopathy. Autopsy studies showed the presence of FSG in 3 of 15 macaques dying 15-120 weeks after experimental infection with a simian immunodeficiency virus (SIVMne). Ultrastructural studies generally revealed numerous endothelial TRIs (also present in normals), mesangial expansion, and evidence of mesangial cell injury. One additional animal had a small-vessel polyarteritis with a proliferative and focally crescentic glomerulonephritis; seven animals had mild, multifocal interstitial nephritis. All animals had documented viremia after infection; 14 of 15 developed antibodies to SIV postinoculation. Additional postmortem findings included severe enterocolitis, encephalitis, and opportunistic infections. In contrast, autopsy studies of macaques infected with a type D simian retrovirus (SAIDS-D/Washington, SRV-2) for similar periods of time (n = 40) showed no evidence of FSG. One SRV-infected animal had a mild proliferative glomerulonephritis. These studies indicate SIV-infected primates may provide a relevant model for study of human HIV-associated nephropathy. They also indicate the variable pathology that can be seen in primate infections of distinct retrovirus types, each of which produces a simian immunodeficiency state that resembles human AIDS.     

GaAs亚微米自对准工艺技术研究

总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。     

Video microscopic analysis of ionophore induced acrosome reactions of lobster (Homarus americanus) sperm

Sperm from the American lobster (Homarus americanus) are normally nonmotile. However, during fertilization, the sperm undergo a calcium-dependent acrosome reaction that propels them forward about 18 microns. The reaction occurs in two phases, eversion and ejection, which take place too quickly to permit analysis by direct observation. The purposes of this study were to examine the structural changes occurring in sperm during the normal acrosome reaction and to determine the rate of the reaction using video microscopy. The reaction was induced in vitro by ionophore A23187 and recorded using a video system attached to a Nikon Nomarski interference microscope. Videotapes were played back frame by frame (30 frames/sec), and images of reactions from 10 sperm were analyzed. The acrosome reaction, including the eversion of the acrosomal vesicle and ejection of the subacrosomal material and nucleus, can be divided into 4 steps: (1) expansion of the apical cap followed by expansion of the remainder of the acrosomal cylinder; expansion of the cylinder begins at its apical end and proceeds toward its base, (2) eversion of the apical half of the acrosomal vesicle and initial contraction of the apical cap, (3) eversion of the basal half of the acrosomal vesicle, continued contraction of the apical cap, and ejection of the subacrosomal material and nucleus, and (4) final contraction of the apical cap and ejection of the acrosomal filament. During steps 2, 3, and 4, the mean forward movement of sperm is 12.7, 3.9, and 1.1 microns, respectively.(ABSTRACT TRUNCATED AT 250 WORDS)     

紫外激光诱导胃癌组织自体荧光的研究

本文测量了紫外激光（３０８ｎｍ）激发诱导正常组织和胃癌组织３１５ｎｍ－６００ｎｍ波段的自体荧光，发现胃癌组织在此荧光光谱不同于正常组织的荧光光谱。根据两者４的区别，可以把胃癌组织从正常组织中区分出来，这为诊断胃癌提供了一个新的思路。     

平面扇形可倾瓦气体推力轴承的优化设计

气体动压轴承在小型透平机械中有着诱人的应用前景．本文介绍了平面扇形可倾瓦气体推力轴承的工作特性计算及其参数优化的方法．利用自编的软件取得了瓦块最佳直径比和支承位置等参数的优化结果，并且在微机上实现了该种轴承的优化设计．     

A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications

A silicon bipolar process for RF and microwave applications, which features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV/sub CEO/, optional 0.7-/spl mu/m (L/sub eff/) NMOS transistors with p/sup +/ polysilicon gates for switch applications, lateral pnp transistors, high and low valued resistors, p/sup +/ polysilicon-to-n/sup +/ plug capacitors, and inductors is described. The npn transistors utilize nitride-oxide composite spacers formed using sacrificial TEOS spacers, a process which is simpler than the previously reported composite spacer processes. Use of the composite spacer structure virtually eliminates problems relating to the extrinsic-intrinsic base link-up and reduces plasma induced damage associated with the conventional spacer process. Microwave and RF capabilities of the process up to several GHz are demonstrated by fabricating and characterizing RF amplifiers, low noise amplifiers, and RF switches.<>     

Ultralow sidelobe-level integrated acoustooptic tunable filtersusing tapered-gap surface acoustic wave directional couplers

We propose a new weighted-coupling scheme using tapered-gap surface acoustic wave directional couplers for realization of ultralow sidelobe-level integrated acoustooptic tunable filters (IAOTF's). Appropriate design analysis has been carried out for 30-mm-long filters operating at an optical wavelength of 1.55 μm in an X-cut Y-propagating LiNbO₃ substrate. New synthesized weighting functions have been used for the improvement of sidelobe level suppression over existing single-stage filters by as much as 27 dB. The -20 dB mainlobe width of the resulting IAOTF's varies from 2.7 to 3.9 nm only for the worst sidelobe levels ranging from -30.6 to -44.7 dB, respectively. It has also been shown that further suppression of sidelobe levels by 3-9 dB is possible if the filter is underdriven at 80% mode-conversion efficiency     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied