全文获取类型
收费全文 | 18938篇 |
免费 | 1424篇 |
国内免费 | 599篇 |
专业分类
电工技术 | 891篇 |
技术理论 | 1篇 |
综合类 | 808篇 |
化学工业 | 3218篇 |
金属工艺 | 975篇 |
机械仪表 | 934篇 |
建筑科学 | 1054篇 |
矿业工程 | 347篇 |
能源动力 | 627篇 |
轻工业 | 1146篇 |
水利工程 | 244篇 |
石油天然气 | 771篇 |
武器工业 | 91篇 |
无线电 | 2730篇 |
一般工业技术 | 2786篇 |
冶金工业 | 1346篇 |
原子能技术 | 190篇 |
自动化技术 | 2802篇 |
出版年
2024年 | 65篇 |
2023年 | 211篇 |
2022年 | 383篇 |
2021年 | 633篇 |
2020年 | 413篇 |
2019年 | 406篇 |
2018年 | 507篇 |
2017年 | 535篇 |
2016年 | 507篇 |
2015年 | 621篇 |
2014年 | 823篇 |
2013年 | 1210篇 |
2012年 | 1104篇 |
2011年 | 1213篇 |
2010年 | 1051篇 |
2009年 | 1107篇 |
2008年 | 1041篇 |
2007年 | 1021篇 |
2006年 | 939篇 |
2005年 | 789篇 |
2004年 | 567篇 |
2003年 | 619篇 |
2002年 | 583篇 |
2001年 | 518篇 |
2000年 | 453篇 |
1999年 | 469篇 |
1998年 | 567篇 |
1997年 | 479篇 |
1996年 | 448篇 |
1995年 | 309篇 |
1994年 | 275篇 |
1993年 | 218篇 |
1992年 | 158篇 |
1991年 | 122篇 |
1990年 | 107篇 |
1989年 | 88篇 |
1988年 | 71篇 |
1987年 | 47篇 |
1986年 | 43篇 |
1985年 | 31篇 |
1984年 | 27篇 |
1983年 | 22篇 |
1982年 | 25篇 |
1980年 | 16篇 |
1979年 | 23篇 |
1978年 | 12篇 |
1977年 | 11篇 |
1976年 | 11篇 |
1975年 | 11篇 |
1973年 | 11篇 |
排序方式: 共有10000条查询结果,搜索用时 406 毫秒
21.
22.
An evolutionary algorithm for large traveling salesman problems 总被引:6,自引:0,他引:6
Huai-Kuang Tsai Jinn-Moon Yang Yuan-Fang Tsai Cheng-Yan Kao 《IEEE transactions on systems, man, and cybernetics. Part B, Cybernetics》2004,34(4):1718-1729
This work proposes an evolutionary algorithm, called the heterogeneous selection evolutionary algorithm (HeSEA), for solving large traveling salesman problems (TSP). The strengths and limitations of numerous well-known genetic operators are first analyzed, along with local search methods for TSPs from their solution qualities and mechanisms for preserving and adding edges. Based on this analysis, a new approach, HeSEA is proposed which integrates edge assembly crossover (EAX) and Lin-Kernighan (LK) local search, through family competition and heterogeneous pairing selection. This study demonstrates experimentally that EAX and LK can compensate for each other's disadvantages. Family competition and heterogeneous pairing selections are used to maintain the diversity of the population, which is especially useful for evolutionary algorithms in solving large TSPs. The proposed method was evaluated on 16 well-known TSPs in which the numbers of cities range from 318 to 13509. Experimental results indicate that HeSEA performs well and is very competitive with other approaches. The proposed method can determine the optimum path when the number of cities is under 10,000 and the mean solution quality is within 0.0074% above the optimum for each test problem. These findings imply that the proposed method can find tours robustly with a fixed small population and a limited family competition length in reasonable time, when used to solve large TSPs. 相似文献
23.
24.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
25.
用保角变换法对共面波导金属厚度效应进行了理论分析,编制了相应的计算机程序,给出了数值解,并对此进行了多元曲线拟合,导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解,并与K.C.格普塔的修正值及实验测量值进行了详细比较,结果表明此修正公式与实验值相符较好。 相似文献
26.
研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性,求出了非线性色散方程,揭示了非线性s偏振表面波存在一个临界频率,低于这个频率,非线性s偏振表面波的频率范围,发现功率不再是决定导波频率范围的唯一因素,两种材料的介电常数比在这里起了至关重要的作用。 相似文献
27.
Jun-Fa Mao Zheng-Fan Li 《Microwave Theory and Techniques》1992,40(4):637-644
A new method for analysis of the time response of multiconductor transmission lines with frequency-dependent losses is presented. This method can solve the time response of various kinds of transmission lines with arbitrary terminal networks. Particularly, it can analyze nonuniform lines with frequency-dependent losses, for which no effective method for analyzing their time response exists. This method starts from the frequency-domain telegrapher's equations. After decoupling and inversely Fourier transforming, then a set of decoupled time-domain equations including convolutions are given. These equations can be solved with the characteristic method. The results obtained with this method are stable and accurate. Two examples are given to illustrate the application of this method to various multiconductor transmission lines 相似文献
28.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
29.
Coplanar waveguide-fed uniplanar bow-tie antenna 总被引:3,自引:0,他引:3
Yu-De Lin Syh-Nan Tsai 《Antennas and Propagation, IEEE Transactions on》1997,45(2):305-306
The design of coplanar waveguide (CPW)-fed bow-tie antenna for the 2.4-GHz ISM band is described. A coplanar waveguide-to-coplanar strips (CPW-to-CPS) balun is used to obtain the balanced feed line for the printed bow-tie. An analysis method based on the mixed potential integral equation method is used to characterize the input characteristics of the bow-tie antenna. The numerical results obtained are in good agreement with the experimental data. Through experiments with bow-tie antennas of various extended angles, the bow-tie antenna with a 90° extended angle exhibits the widest bandwidth in the desired frequency band which has a bandwidth of 17% for a VSWR <1.5:1 相似文献