Organic LED full-color passive-matrix display

Abstract— A full-color 5.2-inch 1/4-VGA passive-matrix organic LED display has been developed, adopting selective deposition for the different emitting materials. The display features 320 (×3) × 240 pixels with an equivalent pixel size of 0.33 × 0.33 mm, white peak luminance of over 150 cd/m², and power consumption of 6 W.     

Natural language understanding based on mental image description language <Emphasis Type="Italic">L</Emphasis><Subscript><Emphasis Type="Italic">md</Emphasis></Subscript> and its application to language-centered robot manipulation

The authors have been working on natural language understanding based on the knowledge representation language L _md and its application to robot manipulation by verbal suggestion. The most remarkable feature of L _md is its capability of formalizing spatiotemporal events in good correspondence with human/robotic sensations and actions, which can lead to integrated computation of sensory, motory and conceptual information. This paper describes briefly the process from text to robot action via semantic representation in L _md and the experimental results of robot manipulation driven by verbal suggestion. This work was presented in part at the 13th International Symposium on Artificial Life and Robotics, Oita, Japan, January 31–February 2, 2008     

Generation of high-repetition-rate WDM pulse trains from anarrayed-waveguide grating

We present what we believe to be the first demonstration of femtosecond pulse train generation from an arrayed-waveguide grating. Terahertz-rate bursts of femtosecond pulses are produced with the rate determined by the arrayed-waveguide delay spacing     

Ion-implanted and permalloy hybrid magnetic bubble memory devices

Hybrid bubble memory devices have been proposed and operated with the memory density of 4 Mbit/cm². In the hybrid bubble memory devices, minor loops are composed of ion-implanted tracks with 4-µm period, and major lines and functional parts including block-replicate and swap gates are composed of Permalloy tracks with a longer period of 12 µm. Passive junctions between ion-implanted and Permalloy tracks have been developed, introducing the tapered ion-implantation technique. Improving the characteristics of the functional parts composed of Permalloy tracks, the hybrid bubble memory devices with block-replicate and swap gates have been operated, and the feasibility of the devices has been confirmed. In addition, the possibility of higher memory density has been shown.     

Concentration effect on optical amplification characteristics ofEr-doped silica single-mode fibers

Optical amplification characteristics for Er-doped silica core single-mode fiber amplifiers with different Er concentrations pumped by 1.48-μm-wavelength laser diodes are studied. Optical gain drastically depends on Er concentration, even when the Er concentration is less than 1000 p.p.m. In the case of the 40-mW incident pump power, the maximum net gain for the fiber containing 77 p.p.m. Er is higher than that for the fiber containing 970 p.p.m. Er by 11.4 dB     

MOVPE growth and Mg doping of InxGa1−xN (x∼0.4) for solar cell

MOVPE growth and Mg doping of InGaN films are studied to develop technologies for the InGaN-based solar cell. By optimizing growth temperature and the TMI/(TMI+TEG) molar ratio, InGaN films with an In content up to 0.37 are successfully grown without phase separation and metallic In incorporation. It is found that the In composition in the InGaN films is governed by growth temperature, and the TMI/(TMI+TEG) molar ratio has very small effect on the composition change. InGaN films doped with Mg using CP₂Mg show the compensation effect of carriers and those with an In content up to 0.2 show p-type conduction. The film with an In content of 0.37 shows phase separation when the CP₂Mg/(TMI+TEG) molar ratio exceeds 0.05, indicating that Mg atoms incorporated have a significant effect on the crystal growth of InGaN.     

An extreame disposition method for low-level radioactive wastes using supercritical water (3)

Disposition of low-level radioactive wastes has been performed in supercritical water with RuO₂ as a catalyst without the addition of any oxidizing materials. These wastes arose from nuclear power plants etc., constituting of nonflammable organic materials, such as fire resistant sheeting and rubber gloves. We investigated the distribution behavior of iron and cobalt attached to nonflammable organic materials, in solid, liquid and gas phases during the decomposition of this method. The distributions of these elements under various conditions (initial amounts) were determined by using their radioisotopes as simulated low-level radioactive wastes in order to ease the detection of trace amounts of elements even in solid and gas phases. Iron and cobalt were found only in the solid phase when non-radioactive iron hydroxide was added as a precipitation reagent before the supercritical-water reaction.     

An anaerobic bacterium isolated from Japanese spiny lobster Panulirus japonicus

Eight strains of bacteria which could not grow under aerobic conditions, were isolated from Japanese spiny lobster. All the strains were Gram-positive, non-sporeforming cocci, and grew well under anaerobic conditions. The strains required a decreased oxygen tension rather than an increased CO₂ tension. Catalase, oxidase, nitrate reductase and urease were not produced. The strains fermented glucose, cellobiose, trehalose and levulose. Indole and H₂S were not produced. Macromolecule substances including starch, esculin, casein, gelatin and chitin were not hydrolyzed. Lactic acid was the sole product from peptone-yeast extract-Fildes solution-glucose broth. Fermentable carbohydrates were not required. The strains could grow at 20 to 37°C, and required NaCl for growth. From the above results, the strains were identified as anaerobic (aerotolerant) Streptococcus sp.     

Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.