Uterine Deletion of Bmal1 Impairs Placental Vascularization and Induces Intrauterine Fetal Death in Mice

Recently, it was demonstrated that the expression of BMAL1 was decreased in the endometrium of women suffering from recurrent spontaneous abortion. To investigate the pathological roles of uterine clock genes during pregnancy, we produced conditional deletion of uterine Bmal1 (cKO) mice and found that cKO mice could receive embryo implantation but not sustain pregnancy. Gene ontology analysis of microarray suggested that uterine NK (uNK) cell function was suppressed in cKO mice. Histological examination revealed the poor formation of maternal vascular spaces in the placenta. In contrast to WT mice, uNK cells in the spongiotrophoblast layer, where maternal uNK cells are directly in contact with fetal trophoblast, hardly expressed an immunosuppressive NK marker, CD161, in cKO mice. By progesterone supplementation, pregnancy could be sustained until the end of pregnancy in some cKO mice. Although this treatment did not improve the structural abnormalities of the placenta, it recruited CD161-positive NK cells into the spongiotrophoblast layer in cKO mice. These findings indicate that the uterine clock system may be critical for pregnancy maintenance after embryo implantation.     

Electron holographic 3-D nano-analysis of Au/TiO2 catalyst at interface

Three-dimensional (3-D) nanostructures of gold catalysts supported on TiO2 were analysed by electron holography and high-resolution electron microscopy. The contact angle of the gold particle on TiO2 tended to be >90 degrees in the case of gold particles with a size (height) of >4 nm and it tended to be <90 degrees for gold particles with a height of <2 nm. The change in morphology increases the perimeter at the Au/TiO2 interface as the particle size decreases. This change in 3-D structure should be attributed to a change in electronic structure at the interface. It was found that electron holography enabled 3-D analysis at the atomic level and was effective for analysing nanostructured particles.     

Queuing Scheme for Improved Downlink Throughput on WLANs

A transmission queuing scheme is described that increases downlink throughput on wireless local area networks (WLANs) while also increasing the total throughput. When the amount of uplink traffic increases on a WLAN, the carrier sense multiple access with collision avoidance (CSMA/CA) protocol, which is the prescribed scheme for IEEE 802.11 WLAN channel access, may substantially reduce the rate of downlink data frame transmission. This results in severe throughput degradation for mobile stations with downlink traffic. The proposed scheme comprises a transmission control function based on consecutive transmission, as described in the IEEE 802.11e standard, and a dynamic queue prioritization algorithm. Simulation results demonstrate that the proposed scheme increases the maximum total throughput for uplink and downlink traffic by 17% compared with the conventional distributed coordination function (DCF) scheme and that it reduces the difference between uplink and downlink throughput. In an environment where transmission errors occur, the difference in throughput is reduced by about 50% compared with the conventional schemes.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

A PWM signal processing core circuit based on a switched currentintegration technique

A highly functional circuit for pulse width modulation (PWM) signal processing is proposed as a core of the A-D merged circuit architecture for time-domain information processing. The core circuit employs a switched-current integration technique as its computing architecture and functions as a linear arithmetic operator, a memory, and also a delaying device of PWM signals. A 0.8-μm CMOS test chip includes 110 transistors plus two capacitors and performs parallel additions and multiplications at the accuracy of 1.2 ns. A cumulative property of the technique allows the circuit to serve as a low-power accumulator that consumes 23% of the energy of the full digital 7-b accumulator. A PWM multiply-accumulate unit and a nonlinear operation unit are also proposed to extend functionality of the circuit. Since the PWM signal carries multibit data in a binary amplitude pulse, these circuits can be favorably applicable to low-voltage and low-power designs in the deep submicrometer era     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

Steam absorption process of water/LiBr system inside vertical small bore pipes

In a previous paper, a numerical model for absorption within vertical pipes was proposed and compared with the experiments. Agreements were good for pipes with an OD 28–15 mm but at 10 mm pipe experiments fell below the predicted values. For smaller diameters, the difference between the surface area of the falling liquid film and that of the outer surface of the pipe is not negligible and the thickness of the liquid film is also not negligible. In this paper a new model is formulated in cylindrical coordinates and experiments using pipes with 9.52 mm and 7 mm OD are done. Smooth pipes and two kinds of internally finned pipes, originally developed and used to enhance the heat transfer characteristics of the evaporator and condenser of a refrigerator using HFC as refrigerant, are tested in the experiments. The absorption performance is enhanced by 30% when compared to the smooth pipes, but the difference between the finned pipes is small. © 2004 Wiley Periodicals, Inc. Heat Trans Asian Res, 34(1): 18–28, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/htj.20040     

Observations of high temperature impinging-jet boiling phenomena

A high-speed video camera and microphone were used to capture the flow behavior and boiling sound of a free-surface water jet impinging on a high temperature surface during quench cooling. It was found that depending on the superheat of the surface considerably different flow patterns appeared. For cases where the initial surface temperature was above about 300 °C an almost explosive pattern appeared. This was in contrast to slightly lower temperatures where a liquid sheet flow structure was apparent. The change in phenomena was accompanied by a sudden change in the boiling sound and an increase in the heat transfer rate.     

An On-Chip Multichannel Waveform Monitor for Diagnosis of Systems-on-a-Chip Integration

An on-chip multichannel waveform monitoring technique enhances built-in test and diagnostic capabilities of systems- on-a-chip (SoC) integration. The proposed multichannel monitor includes multiple probing front-end modules and a single shared waveform acquisition kernel that consists of an incremental variable step delay generator and an incremental reference voltage generator, featuring adaptive sample time generation for the operation of a target circuit and unidirectional waveform acquisition flow for area-efficient control. A 16-channel prototype in 0.18-mum CMOS technology demonstrated on-chip waveform acquisition at 40-ps and 200-muV resolutions. Combined on- and off-chip streamed-bit processing achieves background continuous waveform acquisition at 260 ms per single timing point for repetitive signals, while eliminating the integration of on-die high-capacity memory. A 700 mum times 600 mum area was occupied by a waveform acquisition kernel and an additional 60 mum times 100 mum area for each front-end module. The developed on-chip multichannel waveform monitoring technique is waveform accurate, area efficient, and suitable for diagnosis toward power supply and signal integrity in analog and digital circuits in mixed-signal SoC integration.     

Imaging of a single atomic column in silicon grain boundary

Atomic resolution high voltage electron microscopy was applied in investigations of the atomic structure of [112] sigma3 CSL grain boundary of silicon. Images of the grain boundary, viewed in the < 110 > direction, showed two types of dark spots. One type was rod shaped, which represented an atomic pair aligned in the < 111 > direction. The other was a small round spot, which represented a single atomic column in the grain boundary. The atomic structure of [112] sigma3 CSL grain boundary was directly shown from the atomic-structure image.