Intelligent tutoring system for electric circuit exercising

An intelligent tutoring system called Circuit Exerciser is described. The system is designed to help university students learn more about electric circuits. It can formulate drill problems, solve them, and infer mistakes in a student's answer. It can also provide helpful comments to the students on how the mistake was made. The system shows the circuit of the presented problem on graphic displays and is student-friendly. The system architecture, pedagogical cycle, and execution of the system are presented     

Growth of β-Ga2O3 nanocolumns crossing perpendicularly each other on MgO (1 0 0) surface

β-Ga₂O₃ nanocolumns straightened and crossed perpendicularly each other were deposited on MgO (1 0 0) substrate by vapor phase transport method. Growth of the nanocolumns was examined at steps of 1000, 1050, and 1200 °C in elevation of source-boat temperature. We have drawn out the substrate from deposition-tube at each source-boat temperatures of 1000, 1050, and 1200 °C. Scanning electron microscopy of the sample with source-boat temperature of 1200 °C demonstrated that the straightened and elongated nanocolumns are crossing perpendicularly each other. Typical lengths of the nanocolumns were in the range of several hundreds nanometers below 1050 °C, and those of 1200 °C were in the range of ten to fifteen hundreds nanometers. Diameters of the nanocolumns stayed in the range of few hundreds nanometers, notwithstanding variation of the source temperature. X-ray diffraction and transmission electron microscopy with energy dispersive X-ray spectroscopy revealed that the nanocolumns are monoclinic β-Ga₂O₃ crystal, and the (4 0 0) plane of β-Ga₂O₃ nanocolumns is parallel to the (1 0 0) plane of MgO substrate.     

Numerical simulation of deflecting flow in a symmetric enlarged channel

Numerical results of three-dimensional separated flow and heat transfer in a rectangular channel with a suddenexpansion are presented in this paper.Numerical simulations of Navier-Stokes and energy equations are carriedout using the finite difference method.The results of three-dimensional calculations are compared with thetwo-dimensional ones,and effects of the aspect ratio of channel upon the flow are shown.The transition fromsymmetric to asymmetric flow appears at lower Reynolds number as increasing the aspect ratio.The details oflocal heat transfer characteristics in two different separated flow regions on two downstream walls are clarified.Two-dimensionality of the flow and heat transfer almost disappears for the aspect ratio considered.     

Bulk heterojunction organic solar cells utilizing 1,4,8,11,15,18,22,25-octahexylphthalocyanine

Bulk heterojunction solar cells utilizing soluble phthalocyanine derivative, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH₂) have been investigated. The active layer was fabricated by spin-coating the mixed solution of C6PcH₂ and 1-(3-methoxy-carbonyl)-propyl-1-1-phenyl-(6,6)C61 (PCBM). The photovoltaic properties of the solar cell with bulk heterojunction of C6PcH₂ and PCBM demonstrated the strong dependence of active layer thickness, and the optimized active layer thickness was clarified to be 120 nm. By inserting MoO₃ hole transport buffer layer between the positive electrode and active layer, the FF and energy conversion efficiency were improved to be 0.50 and 3.2%, respectively. The tandem organic thin-film solar cell has also been studied by utilizing active layer materials of C6PcH₂ and poly(3-hexylthiophene) and the interlayer of LiF/Al/MoO₃ structure, and a high V_oc of 1.27 V has been achieved.     

Alloying effects on the hydride formation of Zr(Mn1−xCox)2

To study the alloying effects on ZrMn₂-H system, thermodynamic properties of Zr(Mn_1−xCo_x)₂ hydride were measured by volumetric method. ZrMn₂ gave a single plateau region in the pressure-composition isotherm. On the other hand, double plateaus were clearly observed in Zr(Mn_0.7Co_0.3)₂ and Zr(Mn_0.6Co_0.4)₂-H systems. The appearance of the double plateau characteristics would be explained in view of the hydrogen binding in the tetrahedral occupation sites in Zr(Mn_1−xCo_x)₂. Since the hydrogen binding in the tetrahedral 2ZrMnCo site would be less stable than that in the 2Zr2Mn site, the equilibrium pressure increases with increasing cobalt content. The appearance of the first plateau was ascribed the increase in the bonding of Mn-H in 2Zr2Mn site adjoining the 2ZrMnCo site.     

Characteristics of transient vortices in the boundary layer on a rotating disk under orbital motion

The objective of this study is to experimentally examine the characteristics of transient vortices in the boundary layer on a disk undergoing both rotation and orbital motion. The velocity fluctuations on a rotating, orbiting disk （disk radius equal to orbital radius） are measured by the hot-wire method, and the effects of orbital motion on the transient vortices in the boundary layer are examined. When the ratio of the orbital speed to the speed of rotation is i-0.025, the interval of transient vortices depends on only the orbital radius, regardless of the directions of rota- tion and orbital motion. The rate of low-frequency disturbances increases as the orbital speed increases, and the vortices induced by these low-frequency disturbances travel over the disk and then develop in the region of in- creased velocity. Consequently, no vortices generated on a rotating disk under orbital motion are stationary rela- tive to the disk.     

Effect of catch cup geometry on 3D boundary layer flow over the wafer surface in a spin coating

Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped photoresist scarers outward and reattaches on the film surface. A catch cup is set up outside the wafer in spin coating, and scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup. In the dry process of a spin coating, it is a serious concern that the film thickness increases near the wafer edge in the case of low rotating speed. The purpose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.     

In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

GaN surface stoichiometry and growth kinetics in MOVPE were studied by in-situ spectroscopic ellipsometry. The effect of MOVPE conditions on both the surface stoichiometry and growth kinetics was investigated. The surface stoichiometry, such as N-rich, Ga-rich and Ga-excess surfaces, was monitored, and was drastically changed by the variation of the NH₃ partial pressure. When the TMG supply was interrupted during the growth, the layer-by-layer decomposition/revaporation was observed in H₂/NH₃ ambient. The decomposition rate was measured as a function of the NH₃ flow rate at the conventional epilayer growth temperatures (1050–1140 C). The decomposition rate was decreased with the increase in the N coverage on the GaN surface. it was found that the surface stoichiometry is a very important parameter for the control of the MOVPE growth kinetics.