EXPANSION AND STRESS RELAXATION OF EXPRESSED CAKE

Expansion and stress relaxation of expressed cake are discussed.

The expansion process of expressed cake after release of load is very similar to consolidation of solidndashliquid mixtures, although a liquid flow in the expansion process is opposite in direction to that in consolidalion. This process can be analyzed well by use of the Terzaghi Voigt combined model. It is shown that the rate of primary deformation in expansion is much smaller than that in consolidation under the same change in compressive pressure. It is also found that the ratio of secondary deformation to total deformation in expansion is much larger than that in consolidation.

Stress relaxation of expressed cake, which is observed when expression is stopped before attaining an equilibrium compression state of a material, can be explained by use of a consolidation and expansion theory. In the relaxation process, local expansion appears near the drainage surface while local consolndash idation appears near the center of the cake. The equilibrium cake stress is uniquely determined by the average consolidation ratio when the expression is interrupted.     

Deep Phenotyping of Superficial Epidermolytic Ichthyosis due to a Recurrent Mutation in KRT2

Superficial epidermolytic ichthyosis (SEI) is an autosomal dominant inherited ichthyosis. SEI is caused by mutations in KRT2 and frequently shows erythroderma and widespread blistering at birth. We report the clinical manifestations of two patients from a Japanese family with SEI caused by a hotspot mutation, p.Glu487Lys, in KRT2. In addition, we summarize previous reports on SEI patients with the identical mutation. One of the two patients had disease onset at the age of 7 months. The other patient’s age of onset is unknown, but it was in childhood. Neither of the two patients showed erythroderma. To perform deep phenotyping, we studied the age of onset and the frequency of erythroderma in 34 reported SEI cases with the p.Glu487Lys mutation, including the present cases. Among the cases with sufficient clinical information, 44.4% of the cases that were due to p.Glu487Lys in KRT2 occurred at birth. Erythroderma was observed in 11.1% of the cases with p.Glu487Lys in KRT2.     

Error grid analysis of noninvasive glucose monitoring via gingival crevicular fluid.

In order to realize a noninvasive blood glucose monitor, we monitored the gingival crevicular fluid (GCF). In this paper, the clinical evaluations were performed on not only normal subjects but also diabetic subjects using a GCF-glucose monitor to determine blood glucose levels. Meal load tests were carried out and the time-course changes in blood glucose level and GCF glucose level were measured continuously. A positive correlation of more than 0.9 was found between blood glucose level and GCF glucose level, necessitating the calibration of individual correlations for every subject. Finally, the performance of the GCF-glucose monitor was evaluated using Error Grid Analysis. As the results, significant information for the glucose level decision was obtained not only for normal subjects, but also for diabetic subjects.     

A 1.0-V 230-MHz column access embedded DRAM for portable MPEGapplications

This paper describes a 32-Mb embedded DRAM macro fabricated using 0.13-μm triple-well 4-level Cu embedded DRAM technology, which is suitable for portable equipment of MPEG applications. This macro can operate 230-MHz random column access even at 1.0-V power supply condition. The peak power consumption is suppressed to 198 mW in burst operation. The power-down standby mode, which suppresses the leakage current consumption of peripheral circuitry, is also prepared for portable equipment. With the collaboration of array circuit design and the fine Cu metallization technology, macro size of 18.9 mm² and cell efficiency of 51.3% are realized even with dual interface and triple test functions implemented     

A study on the radiation loss from a bent transmission line

This paper deals with the radiation loss of bent transmission lines in order to determine the most optimal design for a bent line from the standpoint of radiation loss. We have used the method of moments (MoM) for a numerical analysis on the radiation for different structures of bent lines and we have found that the simplest right-angle bend is the best with the least radiation loss. This theoretical expectation was confirmed experimentally     

Effects of Heavy Element Substitution on Electronic Structure and Lattice Thermal Conductivity of Fe2VAl Thermoelectric Material

By using first-principles cluster calculations, we identified that Ta or W substitution for V is useful for decreasing the lattice thermal conductivity of the Fe₂VAl Heusler alloy without greatly affecting the electron transport properties. It was clearly confirmed that the Fe₂(V_1?x Ta _x )Al_0.95Si_0.05 (x?=?0, 0.025, 0.05), Fe₂(V_0.9?x Ta _x Ti_0.1)Al (x?=?0, 0.10, 0.20), and Fe₂(V_0.9?2x W _x Ti_0.1+x )Al (x?=?0, 0.05, 0.10) alloys indeed possessed large Seebeck coefficient regardless of the amounts of substituted elements, while their lattice thermal conductivity was effectively reduced. As a result of partial substitution of Ta for V, we succeeded in increasing the magnitude of the dimensionless figure of merit of the Heusler phase up to 0.2, which is five times as large as the Ta-free compound.     

Thin-Film Thermoelectric Modules for Power Generation Using Focused Solar Light

We demonstrated the fabrication of thin-film thermoelectric generators and evaluated their generation properties using solar light as a thermal source. Thin-film elements of Bi_0.5Sb_1.5Te₃ (p-type) and Bi₂Te_2.7Se_0.3 (n-type), which were patterned using the lift-off technique, were deposited on glass substrates using radiofrequency magnetron sputtering. After annealing at 300°C, the average Seebeck coefficients of p- and n-type films were 150???V/K and ?104???V/K, respectively, at 50°C to 75°C. A cylindrical lens was used to focus solar light to a line shape onto the hot side of the thin-film thermoelectric module with 15 p?Cn junctions. The minimum width of line-shaped solar light was 0.8?mm with solar concentration of 12.5 suns. We studied the properties of thermoelectric modules with different-sized p?Cn junctions on the hot side, and obtained maximum open voltage and power values of 140?mV and 0.7???W, respectively, for a module with 0.5-mm p?Cn junctions. The conversion efficiency was 8.75?×?10^?4%, which was approximately equal to the value estimated by the finite-element method.     

Electrical and Thermal Conductivity and Conduction Mechanism of Ge<Subscript>2</Subscript>Sb<Subscript>2</Subscript>Te<Subscript>5</Subscript> Alloy

Ge₂Sb₂Te₅ alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge₂Sb₂Te₅ alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge₂Sb₂Te₅ alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann–Franz law using the resistivity results. At room temperature, Ge₂Sb₂Te₅ alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge₂Sb₂Te₅ alloy accounts for the thermal conduction mechanism.     

Numerical simulation of oscillatory flow in melt during InSb single crystal growth by RF heating Czochralski method

Oscillatory flow present in the melt during InSb single crystal growth using an RF-heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtained experimentally by measuring the temperature profile along the crucible of a Czochralski system by means of thermocouples mounted in the crucible. Results of numerical simulations showed that the use of a third-order upwind discretization scheme was necessary to catch the oscillatory behaviour of the fluid flow in the melt. It was shown that this oscillatory behaviour strongly depends on the crystal rotation rate. Indeed, the oscillation period increases when the crystal rotation rate is above a critical rotation rate. In order to avoid such oscillations, crystal rotation rates lower than this critical value of crystal rotation rate must be selected for the growth of high quality crystals free of striations. © 1998 John Wiley & Sons, Ltd.