Microstructure and Thermal Shock Resistance of Molten Glass-Coated Carbon Materials Fabricated by Interfacial Control

Carbon substrates were coated completely with a molten silicate glass, where the wettability of carbon to glass was improved by infiltration and pyrolysis of perhydropolysilazane. Microstructures of the carbon–glass interface were dependent on P n ₂ during coating. Coating at lower P n ₂ induced the formation of cristobalite at the carbon–glass interface. When the coating was performed at higher P n ₂, the glass and carbon were strongly adhered, without the formation of cristobalite. Coating at higher P n ₂ improved the thermal shock resistance of the glass layer, because crack initiation was not induced by the phase transformation of cristobalite during the cooling process. In the case of coating at higher P n ₂, an oxynitride glass layer was formed at the glass subsurface by dissolution of N₂. A porous glass subsurface layer with uniform spherical micro-pores could be produced by soaking near the glass transition temperature in a steam environment. The porous layer with fine and homogeneous microstructure acts as a thermal shock absorbing layer, so that glass-coated carbon with a porous glass layer has excellent thermal shock resistance in addition to steam oxidation resistance.     

Synthesis of γ-Ga2O3–Al2O3 Solid Solutions by the Glycothermal Method

The reaction of mixtures of aluminum isopropoxide and gallium acetylacetonate in 1,4-butanediol or 1,5-pentanediol at high temperatures (glycothermal reaction) directly gave the γ-Ga₂O₃–Al₂O₃ solid solutions, which had high catalytic activities for selective reduction of NO using methane as the reducing agent. However, the reaction with a higher Al/(Ga+Al) charged ratio yielded the glycol derivative of boehmite as a by-product and the catalytic activity of the solid solution decreased. Therefore, synthesis of the solid solution using various glycols was examined and it was found that solid solutions with high Al contents without contamination of the glycol derivative of boehmite were obtained by using 1,6-hexanediol as a reaction medium. The solid solution exhibited a higher NO conversion than that synthesized in other glycols.     

Residues important for the function of a multihelical DNA binding domain in the new transcription factor family of Cam and Tet repressors

We report that some prokaryotic repressors including CamR andTetR belong to the same family. CamR and TetR bind to DNA usinga multihelical DNA binding domain (DBD) at the N-termini ofthe proteins, while the C-termini are important for regulatingthe DNA binding in a manner dependent on their co-factors (camphorfor CamR, tetracycline for TetR). In all, 11 important aminoacid positions have been identified in the CamR DBD by the systematicsubstitution of residues by Ala. Of the 11 positions, 10 areeither buried in the core, and thus important for creating thehydrophobic environment, or exposed on the surface, and thusimportant for binding to DNA. The eleventh residue, Gly, seemsto be important for a loop structure. The DNA binding mode ofthis type of DBD and a general mechanism of regulating theirDNA binding are discussed in reference to the crystal structureof TetR [Hinrichs et al., (1994) Science, 264, 418–420].     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.     

Data Center as a Key Player of a District Electric Power and Heat Network System： A Comparison in Urban and Suburb Regions

A DC （data center） demands air-conditioning power as large as the 1/3-1/2 of total electricity consumption. Thus, energy saving of cooling power of DC yields considerable effect on both economic and environmental views. PV （Photovoltaic） and absorption refrigerator with CGS （cogeneration systems） or gas boiler are possible power saving options. The waste warm air from DC would be utilized for greenhouse heating when DC and greenhouse locate near in the suburbs. In this study, the authors develop an energy network model to assess the potential contribution of DC as a major electric power and chilled air consumer as well as the warm air supplier in a district to the energy efficiency improvement. The evaporation heat of LNG （liquefied natural gas） utilization is also considered as well as PV, CGS. This model is applied to the cases of the urban area in Tokyo which involves athletic center, shops and hospital and the suburbs including greenhouse and then compared.     

KDDI：基于下一代网络的固定、移动和广电融合业务

在全球的CDMA运营商中,日本KDDI是非常突出的一家。KDDI于2002年4月推出了自己的3G业务,采用的是cdma20001x技术。与NTTDoCoMo的3G业务一开始缓慢发展相比,KDDI虽晚半年推出3G业务,但其3G业务一起步就进入了快速发展阶段,业务开展才84天,用户数就突破百万大关。到2004年10月,用户数突破1600万的KDDI。那么,到底是什么使KDDI后来居上的呢？本文试图从分析KDDI的业务人手,破解KDDI的成功密码.     

Observation of three-dimensional elemental distributions of a Si device using a 360 degrees -tilt FIB and the cold field-emission STEM system

A technique for preparation of a pillar-shaped specimen and its multidirectional observation using a combination of a scanning transmission electron microscope (STEM) and a focused ion beam (FIB) instrument has been developed. The system employs an FIB/STEM compatible holder with a specially designed tilt mechanism, which allows the specimen to be tilted through 360 degrees [T. Yaguchi, M. Konno, T. Kamino, T. Hashimoto, T. Ohnishi, K. Umemura, K. Asayama, Microsc. Microanal. 9 (Suppl. 2) (2003) 118; T. Yaguchi, M. Konno, T. Kamino, T. Hashimoto, T. Ohnishi, M. Watanabe, Microsc. Microanal. 10 (Suppl. 2) (2004) 1030]. This technique was applied to obtain the three-dimensional (3D) elemental distributions around a contact plug of a Si device used in a 90-nm technology. A specimen containing only one contact plug was prepared in the shape of a pillar with a diameter of 200nm and a length of 5mum. Elemental maps were obtained from the pillar specimen using a 200-kV cold-field emission gun (FEG) STEM model HD-2300C equipped with the EDAX genesis X-ray energy-dispersive spectrometry (XEDS) system through a spectrum imaging technique. In this study, elemental distributions of minor elements with weak signals were enhanced by applying principal component analysis (PCA), which is a superior technique to extract weak signals from a large dataset. The distributions of elements, especially the metallization component Ti and minor dopant As in this particular device, were successfully extracted by PCA. Finally, the 3D elemental distributions around the contact plug could be visualized by reconstruction from the tilt series of maps.     

TMN implementation strategy based on OSI management standards

In order to facilitate the implementations ofTMN interface protocols/services studied inITU-T, it is very important to define profiles for supportingTMN management service. This paper proposes a concrete method for achieving this based on osi management standards as a promisingTMN implementation method. It proposes an idea of structuring theTMN ISP’S based on the structure of the osi managementISP’S. The paper discusses aTMN based on the osi managementISP’S. Finally the implementation as software is discussed and a software architecture for efficient application development is proposed.