Millimeter and submillimeter-wave quasi-optical oscillator withmulti-elements

Multielement oscillators with a quasi-optical resonator are reported. The resonator consists of a Fabry-Perot cavity with a grooved mirror (grating) and a concave mirror. It is possible to mount solid-state devices (Gunn diode, GaAs MESFET, etc.) in the grooved mirror. The oscillator has the capability for power-combining of solid-state sources in the millimeter- and submillimeter-wave regions     

Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

Nonpolar AlGaN/GaN metal–insulator–semiconductor-heterojunction field-effect transistors (MIS-HFETs) with a complete normally off operation have been demonstrated for the first time. To realize the normally off operation of the MIS-HFETs, a 2-nm-thick SiN (as an insulator) and GaN-based nonpolar epitaxial layers that are free from polarization charges are employed. We have found that a thicker nonpolar AlN buffer layer achieves a GaN layer with a narrower full width at half maximum of the X-ray rocking curve and higher electron mobility. The fabricated MIS gate structure on the AlN buffer layer successfully decreases the gate leakage current and enables a more positive gate bias of up to $+$4 V, which is advantageous to achieve a higher drain current. Moreover, the n-GaN capping layer between gate and ohmic electrodes helps to reduce parasitic resistance and suppress current collapse. The fabricated $a$-plane MIS-HFET exhibits a threshold voltage of $+$ 1.3 V with a high drain current of 112 mA/mm. The presented MIS-HFETs will be desirable in next-generation radio-frequency and power switching application fields.      

A compact thin-film-based all-pass device for the compensation of the in-band dispersion in FBG filters

Fiber Bragg grating (FBG)-based bandpass filters, while possessing close to ideal sharp rolloff characteristics, can suffer from a significant amount of in-band dispersion. Results concerning the compensation of the in-band dispersion of a typical 100-GHz FBG using two thin-film all-pass filters, each composed of two coupled-cavities packaged in a compact configuration, are presented. The total peak insertion loss of the compensation package is less than 2.5 dB.     

Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed lightgeneration

We fabricated 850-nm GaAs transverse-junction-stripe (TJS) lasers by an improved metal-organic chemical vapor deposition (MOCVD) and double Zn diffusion process. The high V/III ratio used during the MOCVD growth significantly reduced the intermixing of GaAs active layer and AlGaAs cladding layers. The modified process realized good confinement for both carriers and photons and smaller saturable loss. We measured squeezing of -2.8 dB (-4.5 dB after correction for detection efficiency) at a pumping rate of I/I_th≈20 from these lasers, which is in close agreement with the theoretical limit. This squeezing remained unchanged under injection locking, indicating almost perfect conservation of the intensity noise correlation among the longitudinal modes. These TJS lasers had very small low-frequency 1/f noise     

Multiobjective control of a vehicle with triple trailers

We consider the backing-up control of a vehicle with triple trailers using a model-based fuzzy-control methodology. First, the vehicle model is represented by a Takagi-Sugeno fuzzy model. Then, we employ the so-called "parallel distributed compensation" design to arrive at a controller that guarantees the stability of the closed-loop system consisted of the fuzzy model and controller. The control-design problem is cast in terms of linear matrix inequalities (LMIs). In addition to stability, the control performance considerations such as decay rate, constraints on input and output, and disturbance rejection are incorporated in the LMI conditions. In application to the vehicle with triple trailers setup, we utilize these LMI conditions to explicitly avoid the saturation of the steering angle and the jackknife phenomenon in the control design. Both simulation and experimental results are presented. Our results demonstrate that the fuzzy controller effectively achieves the backing-up control of the vehicle with triple trailers while avoiding the saturation of the actuator and "jackknife" phenomenon.     

Beam alignment and related problems of spherical aberration corrected high-resolution TEM images

For spherical aberration corrected transmission electron microscopes recently developed, the Scherzer resolution in proportion to C(s) 1/4 lambda 3/4 is still inevitably limited by the influence of some other electron optical factors, such as chromatic aberration coefficient of objective lens (C(c)), beam divergence and alignment, incident electron energy spread (deltaE), and the instability of accelerating voltage (deltaV) and of lens current (deltaI). Depending on the image resolution guaranteed by C(s) correction, the defocus spread caused by C(c), deltaV, deltaI and deltaE would need to be reduced. The effect of beam alignment as a phase shift in contrast transfer function is also studied for the C(s) corrected microscopes with different values of C(s), defocus and spatial frequency. There is a relationship between the phase shift and defocus that allows us to find a series of 'alignment-free' focal conditions. A triangular relation among C(s), defocus and lattice spacing is established for proper image contrast and 'alignment-free' imaging with the C(s) corrected microscope.     

Advanced base station technologies for UTRAN

To achieve high capacity and to support high-data-rate services in the terrestrial access network (UTRAN) of the third generation Universal Mobile Telecommunications System (UMTS), it is essential to employ some advanced transceiver techniques at the base stations. Three such techniques are presented: adaptive antennas, multistage parallel interference cancellers and a new hybrid scheme. The operation principles and some simulation results of the techniques are given and some challenging implementation issues are discussed     

A high-density NAND EEPROM with block-page programming formicrocomputer applications

A high-density, 5-V-only, 4-Mb CMOS EEPROM with a NAND-structured cell using Fowler-Nordheim tunneling for programming is discussed. The block-page mode is utilized for high-speed programming and easy microprocessor interface. On-chip test circuits for shortening test time and for evaluating cell characteristics yield highly reliable EEPROMs. The NAND EEPROM has many applications for microcomputer systems that require small size and large nonvolatile storage systems with low power consumption     

Built-in folded monopole antenna for handsets

A built-in folded monopole antenna for handsets (BFMA) is introduced and investigated. The characteristics of the BFMA are compared with those of a planar inverted-F antenna (PIFA), which is one of the conventional handset antennas. As a result, it has been confirmed that the BFMA has smaller size and wider bandwidth compared with the PIFA.     

Electrical and Thermal Conductivity and Conduction Mechanism of Ge<Subscript>2</Subscript>Sb<Subscript>2</Subscript>Te<Subscript>5</Subscript> Alloy

Ge₂Sb₂Te₅ alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge₂Sb₂Te₅ alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge₂Sb₂Te₅ alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann–Franz law using the resistivity results. At room temperature, Ge₂Sb₂Te₅ alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge₂Sb₂Te₅ alloy accounts for the thermal conduction mechanism.