Still image transmission using ARQ over Rayleigh fading channels

The authors propose a new ARQ scheme suitable for image transmission over radio channels. The proposed scheme detects only serious degradation and so attains higher throughput performance than the conventional ARQ scheme     

CuPc/PbZr0.2Ti0.8O3/(La,Ba)MnO3 field effect transistor heterojunction photomemory

We investigated a photoconductor(PC)/ferroelectric oxide(OF)/semiconductor oxide(SO) POS-FET structure photomemory consisting of organic photoconductor CuPc/inorganic ferroelectric PbZr_0.2Ti_0.8O₃ heterojunction gate and a ferromagnetic oxide semiconductor La_0.87Ba_0.13MnO₃ channel. Visible light information detected by photoconductor CuPc can be memorized in ferroelectric PbZr_0.2Ti_0.8O₃, and non-volatile and non-destructive reading out process of light information memorized in this ferroelectric layer were achieved by reading out the resistance modulation of ferromagnetic semiconductor oxide La_0.87Ba_0.13MnO₃ channel under the photoconductor/ferroelectric gate.     

Wideband and compact folded loop antenna

A simple and successful design method that yields a wideband and compact antenna without a ground plane is proposed. The antenna, referred to as the folded loop antenna, can, with the right parameters, achieve wideband characteristics. Calculated and measured results agree well and more than 50% bandwidth (return loss /spl les/-10 dB) is obtained.     

Analysis and discussion on conduction current based on simultaneousmeasurement of TSC and space charge distribution

A new analysis of conduction current distributed in dielectrics based on simultaneous measurements of thermally stimulated current (TSC) and time dependent space charge distribution is proposed. A new system pulsed electro-acoustic (PEA) method has been developed to enable simultaneous measurement of the TSC and the dynamic space charge and electric field distributions as a function of temperature within insulators. With the new system, the relationship between the TSC and the time dependent electric field distribution in electron beam (e-beam) irradiated PMMA has been investigated. From the time dependent electric field, the displacement current in dielectrics is obtained. The TSC is a typical external current which is represented as an addition of the displacement current and a conduction current in dielectrics. This paper makes it clear that the conduction current as a function of position is determined by the simultaneous measurement of the external current and the dynamic space charge distribution     

Numerical simulation of oscillatory flow in melt during InSb single crystal growth by RF heating Czochralski method

Oscillatory flow present in the melt during InSb single crystal growth using an RF-heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtained experimentally by measuring the temperature profile along the crucible of a Czochralski system by means of thermocouples mounted in the crucible. Results of numerical simulations showed that the use of a third-order upwind discretization scheme was necessary to catch the oscillatory behaviour of the fluid flow in the melt. It was shown that this oscillatory behaviour strongly depends on the crystal rotation rate. Indeed, the oscillation period increases when the crystal rotation rate is above a critical rotation rate. In order to avoid such oscillations, crystal rotation rates lower than this critical value of crystal rotation rate must be selected for the growth of high quality crystals free of striations. © 1998 John Wiley & Sons, Ltd.     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.     

Blue electroluminescent devices withSrGa2S4:Ce for full-color display

In order to realize full-color electroluminescent (EL) displays, which are expected as a dominant candidate for the future multimedia flat panel display, blue EL devices with SrGa₂S₄:Ce have been prepared by molecular beam epitaxy (MBE). This paper proposes a novel deposition method employing Sr metal and Ga₂S₄ compound as the source materials. A single-phase SrGa₂S₄ layer is obtained in a Ga₂S₃/Sr flux ratio of 60 and at the growth temperature of 560°C. We have obtained the well-saturated blue with CIE color coordinates of x=0.14, y=0.14 and brighter blue EL devices made by optimizing the growth conditions in MBE. The maximum luminance of 70 cd/m² in comparison with the 3 cd/m₂ of our previous EL devices, is achieved at a driving frequency of 1 kHz     

Simulation of a high performance MOSFET with a quantum wirestructure incorporating a periodically bent Si-SiO2 interface

A MOSFET using a serrated quantum wire structure that produces one-dimensional electron confinement shows excellent subthreshold characteristics and enhanced drive capability compared to a conventional MOSFET with a flat Si-SiO₂ interface. We studied the quantum wire structure with its periodically bent Si-SiO₂ interface using simulations. The potential in the convex regions of the silicon is 0.34 V higher than that in the concave ones when the bending angle is 90°, the bending period is 100 nm, substrate doping is 3.0×10 ¹⁷ cm^-3, and a gate voltage is 0.1 V. Because of this increase in potential in the convex regions, electrons are confined in a narrow width of 13 nm in the convex regions. This 1-D electron confinement effect by the bent Si-SiO₂ interface is clearly observed at low gate voltage and is reduced as the gate voltage becomes higher. Due to the confinement effect, drain current in the MOSFET with this quantum wire structure is 270 times higher than that of a MOSFET with a flat Si-SiO₂ interface at a gate voltage of 0.05 V. In addition, the short-channel effect is more effectively suppressed in this MOSFET than in a conventional MOSFET     

Electrical properties of nickel in silicon

Electrical activity and energy levels as well as diffusion properties of nickel in silicon have not yet been reliably established. In this paper, we investigated the diffusion and the electrical properties of nickel in silicon to confirm that nickel is electrically active and introduces one acceptor and one donor level by combined measurements of Hall coefficient and DLTS, and measurements of the distribution of electrically active nickel in various silicon diodes by DLTS. The former experiments show that bothn- andp- type silicon are compensated by nickel and that nickel introduces an acceptor level ofE _c-0.47 ± 0.04 eV and a donor level ofE _v +0.18 ± 0.02 eV. The concentrations of these two levels are almost identical over the diffusion temperatures from about 800 to 1100° C, indicating that these donor and acceptor levels are due to different charge states of the same nickel center. In the distribution measurements of electrically active nickel in silicon diodes, we inspected how nickel can be observed by DLTS. It was found that the nickel diffusion intop- n junction is rather complicated, the distribution profiles of nickel in the vicinity of thep- n junction being markedly influenced by an additional heating at elevated temperatures after the nickel diffusion. This gives evidence that the difference in silicon devices used in various studies could give rise to different results.