HIGHER PLANT BIOMARKERS IN PALEOGENE CRUDE OILS FROM THE YUFUTSU OIL-AND GASFIELD AND OFFSHORE WILDCATS, JAPAN

Geochemical investigation of Paleogene oils from the onshore Yufutsu oil- and gasfield, southern Hokkaido, and from two nearby offshore wells, revealed the presence of numerous biomarkers of higher plant origin. Biomarkers in the oils belong to different groups of both angiosperm and gymnosperm origin; they include bicyclic sesquiterpanes, diterpanes, and triterpanes and their aromatized counterparts, which suggests a terrestrial origin for the oils. The oils were characterized as having a high wax content, a low content of organosulphur compounds, a high pristane/phytane ratio, and a low C₂₇/(C₂₇+C₂₉) sterane ratio.
Although the oils from on- and offshore Southern Hokkaido are similar in their geochemical composition, notable differences were observed in the biomarker signature of both saturate and aromatic fractions. The oils from the offshore wells appeared to have a greater abundance of higher plant biomarkers compared to those from the Yufutsu field, suggesting an enrichment in higher plant components. Differences in biomarker fingerprint could not be linked to the maturity effect, since the oils appeared to be of similar maturity levels, corresponding to the late stage of the oil window (0.9–1.2%, Rc). The differences in the biomarker signatures between the oils from the Yufutsu field and the offshore wells are likely to be due to facies variations in source organic matter, resulting from differences in the quantity and quality of land plant input.     

Access and metro networks based on WDM technologies

This paper describes the technical issues of access and metro networks based on wavelength division multiplexing (WDM) technologies, some solutions, and an experimental demonstration. A WDM star access network with colorless optical network units (ONUs) is proposed. For realizing the colorless ONU, two approaches are introduced; optical carrier supply and spectrum slicing. In addition, a WDM metro ring network with scalable optical add/drop multiplexers (OADMs), namely the tapped-type OADM, is proposed to effectively accommodate the large amount of traffic issued from access networks. Prototypes are constructed and used to verify the feasibility of the proposed WDM technologies.     

The IEEE P1520 standards initiative for programmable networkinterfaces

This article discusses the need for standard software interfaces for programming of networks, specifically for service and signaling control, through programming interfaces. The objective is to enable the development of open signaling, control, and management applications as well as higher-level multimedia services on networks. The scope of this effort includes ATM switches, circuit switches, IP routers, and hybrid switches such as those that provide for fast switching of IP packets over an ATM backbone. The basic ideas represented herein are in the process of development as a standard for application programming interfaces for networks under IEEE Standards Project IEEE P1520     

Novel design scheme for high-speed MQW lasers with enhanceddifferential gain and reduced carrier transport effect

We present a theoretical analysis exploring the optimum design of high-speed multiple-quantum-well (MQW) lasers for 1.55-μm operation. Various combinations of well and barrier materials are examined for lattice-matched, strained-layered (SL), and strain-compensated (SC) MQW lasers with InGaAsP and InGaAlAs barriers. The gain characteristics are investigated for these MQW lasers with various barrier bandgap wavelengths and are used to evaluate the modulation characteristics based on the carrier dynamics model which includes a set of Poisson, continuity, and rate equations. The importance of band engineering aimed at simultaneously reducing the carrier transport effect and enhancing the differential gain is described. It is shown that SC-MQW lasers with InGaAlAs barriers have an advantage in reducing the density of states in the valence band by reducing the overlap integral between the heavy- and light-hole wave functions, which effect has previously been discarded as a minor correction in designing conventional InGaAsP-based MQW lasers. Furthermore, the hole transport rate across the barriers can be drastically reduced in SC-MQW lasers due to the reduced effective barrier height for the holes. Based on this novel design scheme, a 3-dB bandwidth approaching 70 GHz is expected for 20-well SC-MQW lasers with InGaAlAs barriers as a result of both the large differential gain and reduced transport effect     

Multiple-symbol detection of MPSK in narrow-band interference andAWGN

We propose a new technique for rejection of narrow-band interference (NBI) based on multiple-symbol detection of coherent or differential phase-shift keying (DPSK). We first show that the direct use of multiple-symbol detection offers poor performance when NBI is dominant. Our proposed technique employs a special signaling or coding scheme which is shown to be robust against NBI. The evaluation of bit-error rate (BER) shows significant performance improvement in NBI vis-a-vis direct multiple-symbol detection. When viewed as a coding scheme, the proposed signaling scheme is significantly simpler for achieving the same coding gain than conventional error correction codes     

Analysis of course errors on CVOR antennas (including effects ofmutual coupling between elements)

A VHF omnidirectional radio range (VOR) is a navigation aid radio beacon facility, which provides aircraft with azimuth information relative to the VOR station in question as the origin. In Japan, two types of VOR-the conventional type (referred to as a CVOR) and the Doppler type (referred to as a DVOR)-are currently in use. An element known as the Alford loop antenna (ALA), which changes the loading reactance, is used for the VOR because the horizontally polarized wave and nondirectivity in the horizontal plane are preferred. A VOR antenna consists of a carrier antenna and a sideband antenna-an aircraft receives separate signals from these two antennas and compares them to obtain azimuth information. The mutual coupling between the elements forming the carrier and the sideband antenna affects the directivity of the single elements, resulting in errors in azimuth information. With the mutual coupling between the antenna elements being taken into consideration, a quantitative calculation was made by using the moment method-the results of the calculation made it clear that a loading reactance value of -320 Ω is better to make not mutually coupled elements nondirectional while a loading reactance value of -600 Ω is optimum to minimize the azimuth error of a CVOR     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

Multicomponent zone melting growth of ternary InGaAs bulk crystal

In_xGa_1-x As crystals with x = 0.25-0.08 have been successfully grown on GaAs seeds by a method of multicomponent zone melting growth. Its alloy composition is found to be controlled by the growth temperature. Within an ingot, a good uniformity in the alloy composition along the direction normal to the growth is also achieved. The alloy composition gradually changes along the growth direction in the ingot, and this change is well explained by a temperature profile in the growth furnace.     

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

Interface properties of MBE-grown ZnSe/GaAs substrate systems formed on variously pretreated GaAs surfaces, which include standard chemically etched (5H₂SO₄:1H₂O₂: 1H₂O), (NH₄)₂S_x-, NH₄I-, and HF-pretreated surfaces, are investigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. A HF-pretreated and annealed ZnSe/p-GaAs sample showed marked reduction of interface state density, N_ss, with N_ss,_min below 4 x 10¹¹cm^-2 eV^-1 near E_c- E_FS= 1.0 eV. The value is about one order of magnitude smaller than that of the standard chemically etched interface, and comparable to (NH₄)₂S_x- pretreated interface. Nevertheless, C-V characteristics of ZnSe/nGaAs samples, which were measured for the first time, indicate that interface Fermi level, E_FS, is not completely unpinned due to the interface states located above the midgap. A consistent result was obtained by DLTS method in determining E_FS position. The influence of N_ss distribution on vertical current conduction is also analyzed. It is found that U-shaped interface states with N_ss(E) > 1 x 10¹³ cm^-2 eV^-1 above the midgap may cause an excess voltage drop larger than a few volts at the interface.     

Dye-sensitized solar cell made of mesoporous titania by surfactant-assisted templating method

Nanocrystalline mesoporous titania was obtained by surfactant-assisted templating method using tetraisopropyl orthotitanate modified with acethylacetone and laurylamine hydrochloride as template. This material was applied for the electrode of dye-sensitized solar cell. The mesoporous TiO₂ (MP-TiO₂) cells exhibited higher short-circuit photocurrent density and solar energy conversion efficiency compared to P25 (a typical commercial titania powder) cells. The incident photon to current conversion efficiency spectrum of MP-TiO₂ can be improved by using the cell made with 5% P25 additive. Double-layer titania cells were fabricated to further improve cell performance by increasing the film thickness and light scattering. The solar conversion efficiency up to 8.06% was obtained by using the double-layer titania cell sintered at 450 °C for 2 h.