A simple approach to observe non-conductive hydrated materials with FE-SEM: Case study on porous hydroxyapatite green bodies

The purpose of this study is to develop a simple method to observe the surface morphology of non-conductive material in its hydrated condition. Here porous hydroxyapatite (HAp) green body prepared by gelcasting process was considered as a case study, and, the resultant body was subsequently treated with hydrophilic ionic liquid (IL). The surface morphology and the pore structure of the IL-treated porous HAp green body were successfully observed even in hydrated condition without any charging using field emission scanning electron microscope (FE-SEM). Results showed that the pore diameter from 300 to 600 μm in as-prepared green body was reduced to 100–300 μm in the sample sintered at 1000 °C. Raman results showed that the IL forms weak hydrogen bond with water molecules within the sample and, that prevents from drying in vacuum condition. In addition, the IL acts as a conducting media for HAp ceramics to be observed under FE-SEM.     

Hermetic seal of ceramics and metals joints by an Al-Si interlayer

Journal of Materials Science Letters -     

PZT-Polymer 1-3 Composite for High Resolution Ultrasonic Imaging

A novel process has been developed to construct PZT-polymer 1-3 micro composites for high-resolution ultrasonic imaging for medical diagnosis. The key technology is the lost silicon (Si) mold process, by which PZT micro-rod arrays have been successfully fabricated with the finest rod size being 7 μm, the highest aspect ratio exceeding 15. Such fine-scale high-aspect-ratio PZT structures, which are essential for realizing high imaging performance, have never been realized by any conventional technique.     

Osteoinduction by Functionally Graded Apatites of Bovine Origin Loaded with Bone Morphogenetic Protein-2

Bioresorbable and functionally graded apatites (fg-HAp) ceramics, which are characterized by gradations in crystallinity and the grain size of hydroxyapatite (HAp:Ca₁₀(PO₄)₆(OH)₂), were designed using bovine bone by the calcination and partial dissolution–precipitation method. The fg-HAp ceramics had macropores of 100–600 μm originated from spongy bone, and micropores of 10–160 nm. Fg-HAp ceramics loaded with recombinant human bone morphogenetic protein-2 (rhBMP-2/fg-HAp) were implanted into the subcutaneous tissue of rats. Eight weeks after the implantation, the surface and bulk degradations of the fg-HAp-containing body fluid occured, and small pieces of fg-HAp were incorporated into the induced bone and fatty marrow, suggesting that osteoinduction occurred in conjunction with bone remodeling. The rhBMP-2/fg-HAp ceramics developed could become a resorbable biomimetic material with fast bioresorption and osteoinduction characteristics.     

Enhanced renal toxicity by inorganic mercury in metallothionein-null mice

To elucidate a protective role of metallothionein (MT) in the manifestation of inorganic mercury toxicity, we studied the susceptibility of MT-null mice to the renal toxicity of mercuric chloride. Because the MT-null (J) mice are a genetic background of 129/Sv strain, the 129/Sv mice were used as wild-type controls. Nine-week-old male MT-null (J) and 129/Sv mice were given subcutaneous injections of mercuric chloride at doses of 10 to 40 micromol/kg. The basal MT level in the kidney of MT-null (J) mice was undetectable (<0.2 microg/g of tissue) and approximately 2.5 microg/g of tissue in 129/Sv mice. The sensitivity to the renal toxicity of mercuric chloride was markedly enhanced in the MT-null (J) mice compared with the 129/Sv mice. The renal mercury level was similar for the MT-null (J) and 129/Sv mice at 4 hr after the injection of mercuric chloride (20 micromol/kg) but became significantly lower in MT-null (J) mice than in 129/Sv mice at 24 and 72 hr. Based on the present results, we conclude that MT is an important protective factor against the renal toxicity caused by inorganic mercury and that it may play a major role in the retention of mercury in the kidney.     

Thermal and electrical properties of perovskite-type strontium molybdate

Polycrystalline samples of perovskite-type strontium molybdate, SrMoO₃, have been prepared and the thermal and electrical properties have been measured from room temperature to about 1000 K. The electrical resistivity is of an order of magnitude of 10⁻⁵ to 10⁻⁶ (Ω m) in the whole temperature range. The Seebeck coefficient is around 4–9 μV K⁻¹. At room temperature, the thermal conductivity is about 30 W m⁻¹ K⁻¹, and it decreases with increasing temperature.     

Deep Reactive Ion Etching of Lead Zirconate Titanate Using Sulfur Hexafluoride Gas

A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF₆) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O₃, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70 µm with a maximum etch rate of 0.3 µm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine-slit etching phenomena were observed.     

Bipolar transistor selected P-channel flash memory cell technology

A novel BIpolar Transistor Selected (BITS) P-channel flash memory cell is proposed, where a bipolar transistor embedded in the source region of the cell amplifies cell-read-current and acts as a select transistor. With this cell, not only a very low 1.5 V non-word-line-boosting read operation, but also a sector-erase operation are successfully achieved with only a small cell-size increase over the conventional NOR cell. Moreover, this cell technology maintains all the advantages of the P-channel DIvided-bit-line NOR (DINOR) flash memory     

GaN-based optoelectronic devices on sapphire and Si substrates

A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm²/V s with a sheet carrier density of 4.8×10¹² cm⁻² was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain–source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain–source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300 Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.     

Administration-time-dependent effects of diltiazem on the 24-hour blood pressure profile of essential hypertension patients

Cells of the central nervous system (CNS) normally do not express detectable levels of major histocompatibility complex (MHC) Class I antigens. However, MHC Class I expression can be induced after virus infection. We tested the hypothesis that virus-induced Class I expression is mediated by lymphocytes or cytokines using lymphocyte- and cytokine-deficient mice. We used Theiler's murine encephalomyelitis virus (TMEV), which induces CNS demyelination that maps genetically to the D region of MHC Class I and is associated with high levels of Class I products. TMEV infection of severe combined immunodeficiency (SCID) and recombination activation gene-1-deficient mice, which lack B and T lymphocytes, resulted in equivalent H-2D and H-2K expression in brain and spinal cord, according to analysis of the area and intensity of immunoperoxidase staining. Class I antigens were demonstrated as early as 6 hours after infection, and they were more widely distributed than viral RNA, indicating that expression was induced indirectly via a soluble factor. To determine whether cytokines induced the expression, we infected mice lacking receptors for interferon-alpha/beta (IFN-alpha/beta R (-/-)), interferon-gamma (IFN-gamma R(-/-)), and tumor necrosis factor-alpha (TNFRp55(-/-)). TMEV-infected IFN-gamma R(-/-) and TN-FRp55(-/-) mice expressed Class I antigens in the CNS, whereas IFN-alpha/beta R(-/-) mice did not, establishing that IFN-alpha/beta mediated the expression. In contrast to the equivalent expression in SCID mice, we observed greater area and higher intensity of H-2D versus H-2K antigens in infected SCID mice reconstituted with normal spleen cells. Collectively, the data indicate that after TMEV infection, early generalized MHC Class I expression is mediated by IFN-alpha/beta independently of lymphocytes, but the differential regulation of H-2D over H-2K may be controlled by B and/or T lymphocytes.