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51.
Solution‐processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n‐type electrolyte‐gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n‐type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 104 with low hysteresis, channel width‐normalized on‐conductances of up to 0.27 µS µm?1 and estimated electron mobilities around 0.01 cm2 V?1 s?1. In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm?3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.  相似文献   
52.
The millimeter-wave spectrum above 70 GHz provides a cost-effective solution to increase the wireless communications data rates by increasing the carrier wave frequencies. We report on the development of two key components of a wireless transmission system, a high-speed photodiode (HS-PD) and a Schottky Barrier Diode (SBD). Both components operate uncooled, a key issue in the development of compact modules. On the transmitter side, an improved design of the HS-PD allows it to deliver an output RF power exceeding 0 dBm (1 mW). On the receiver side, we present the design process and achieved results on the development of a compact direct envelope detection receiver based on a quasi-optical SDB module. Different resonant (meander dipole) and broadband (Log-Spiral and Log-Periodic) planar antenna solutions are designed, matching the antenna and Schottky diode impedances at high frequency. Impedance matching at baseband is also provided by means of an impedance transition to a 50 Ohm output. From this comparison, we demonstrate the excellent performance of the broadband antennas over the entire E-band by setting up a short-range wireless link transmitting a 1 Gbps data signal.  相似文献   
53.
Cooperative self-assembly (co-assembly) of diblock copolymers (DBCs) and inorganic precursors that takes inspiration from the rich phase separation behavior of DBCs can enable the realization of a broad spectrum of functional nanostructures with the desired sizes. In a DBC assisted sol–gel chemistry approach with polystyrene-block-poly(ethylene oxide) and ZnO, hybrid films are formed with slot-die coating. Pure DBC films are printed as control. In situ grazing-incidence small-angle X-ray scattering measurements are performed to investigate the self-assembly and co-assembly process during the film formation. Combining complementary ex situ characterizations, several distinct regimes are differentiated to describe the morphological transformations from the initially solvent-dispersed to the ultimately solidified films. The comparison of the assembly pathway evidences that the key step in the establishment of the pure DBC film is the coalescence of spherical micelles toward cylindrical domains. Due to the presence of the phase-selective precursor, the formation of cylindrical aggregates in the solution is crucial for the structural development of the hybrid film. The pre-existing cylinders in the ink impede the domain growth of the hybrid film during the subsequent drying process. The precursor reduces the degree of order, prevents crystallization of the PEO block, and introduces additional length scales in the hybrid films.  相似文献   
54.
Due to the increasing demands on efficiency, performance and flexibility reconfigurable computational architectures are very promising candidates in embedded systems design. Recently coarse-grained reconfigurable array architectures (CGRAs), such as the ADRES CGRA and its corresponding DRESC compiler are gaining more popularity due to several technological breakthroughs in this area. We investigate the mapping of two image processing algorithms, Wavelet encoding and decoding, and TIFF compression on this novel type of array architectures in a systematic way. The results of our experiments show that CGRAs based on ADRES and its DRESC compiler technology deliver improved performance levels for these two benchmark applications when compared to results obtained on a state-of-the-art commercial DSP platform, the c64x DSP from Texas Instruments. ADRES/DRESC can beat its performance by at least 50% in cycle count and the power consumption even drops to 10% of the published numbers of the c64x DSP.  相似文献   
55.
56.
The thermoelectric power of Rh and Ir was redetermined between 100 K and 1400 K. It varies almost linearly from +1.7 μV K−1 to −3.8 μV K−1 for Rh and from +1.5 μV K−1 to −2.2 μV K−1 for Ir. The diffusive part of the thermopower could be calculated from the density of states. It is approximately equal to the temperature dependence of the electrochemical potential of the electrons divided by the electronic charge. This is attributed to the approximate establishment of local equilibrium between electrons and lattice atoms above 400 K—a condition not fulfilled in the phonon-drag regime below 300 K.  相似文献   
57.
In this paper, we present the selective structuring of all three patterns (P1, P2 and P3) of a monolithic interconnection of CIS (Cu(In,Ga)(S,Se)2) thin film solar cells by picosecond laser pulses at a wavelength of 1064 nm. We show results for single pulse ablation threshold values and line scribing of molybdenum films on glass (P1), CIS on molybdenum (P2) and zinc oxide on CIS (P3). The purposes of these processes are the p‐type isolation (P1), cell interconnect (P2) and n‐type isolation (P3), which are required for complete cell architecture. The half micron thick molybdenum back electrode can be structured with a process speed of more than 15 m/s at about 15 W average power without detectable residues and damage by direct induced laser ablation from the back side (P1). The CIS layer can be structured selectively down to the molybdenum at process speeds up to 1 m/s at about 15 W average power, due to the precision of direct laser ablation in the ultrashort pulse regime (P2). The ZnO front electrode layer is separated by clean trenches with straight side walls at process speeds of up to 15 m/s at about 10 W average power, as a result of indirect induced laser ablation (P3). A validation of functionality of all processes is demonstrated on CIS solar cell modules (30 × 30 cm2). By replacing one state‐of‐the‐art process by a picosecond laser process at a time, solar efficiencies could be increased for P1 and P2 and stayed on a similar level for P3. After an optimization of the patterning processes in the R&D pilot line of AVANCIS, we achieved a new record efficiency for an all‐laser‐patterned CIS solar module: 14.7% as best value for the aperture area efficiency of a 30 × 30 cm2 sized CIS module was reached. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
58.
Approximate information on the location of nodes in a sensor network is essential to many types of sensor network applications and algorithms. In many cases, using symbolic coordinates is an attractive alternative to the use of geographic coordinates due to lower costs and lower requirements on the available location information during coordinate assignment. In this paper, we investigate different possible methods of assigning symbolic coordinates to sensor nodes. We present a method based on broadcasting coordinate messages and filtering using sensor events. We show in the evaluation that this method allows a reliable assignment of symbolic coordinates while only generating a low overhead.  相似文献   
59.
Ultranarrowband organic photodiodes (OPDs) are demonstrated for thin film solid state materials composed of tightly packed dipolar merocyanine dyes. For these dyes the packing arrangement can be controlled by the bulkiness of the donor substituent, leading to either strong H‐ or strong J‐type exciton coupling in the interesting blue (H‐aggregate) and NIR (J‐aggregate) spectral ranges. Both bands are shown to arise from one single exciton band according to fluorescence measurements and are not just a mere consequence of different polymorphs within the same thin film. By fabrication of organic thin‐film transistors, these dyes are demonstrated to exhibit hole transport behavior in spin‐coated thin films. Moreover, when used as organic photodiodes in planar heterojunctions with C60 fullerene, they show wavelength‐selective photocurrents in the solid state with maximum external quantum efficiencies of up to 11% and ultranarrow bandwidths down to 30 nm. Thereby, narrowing the linewidths of optoelectronic functional materials by exciton coupling provides a powerful approach to produce ultranarrowband organic photodiodes.  相似文献   
60.
Carbon hard mask structures have been used to etch a variety of materials typically used in sub 90 nm DRAM manufacture. The results indicate that carbon hard masks can be used very effectively to structure oxide, nitride and metal films giving the CD performance required for the technologies being investigated.  相似文献   
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