A survey on nonlinear analog-to-digital converters

This paper presents a survey on Nonlinear Analog-to-Digital converters (ADC). This class of converters is extremely relevant in applications where there is a need for non-uniform quantization characteristic, for example, some specific applications in the areas of light detection, hearing aid, nuclear physics, image acquisition, communication systems, etc. This survey outlines the state-of-the-art Nonlinear ADC topologies, such as, floating point, logarithmic, piecewise linear and oversampled nonlinear converters, and discusses their performance and advantages in terms of their applications.     

Assessing the Noise Statistics in Common Optical Transmission Systems

We experimentally investigate the probability density function (pdf) of sampled bits in common intensity-modulated direct-detection systems in linear and nonlinear regime, both single-channel and wavelength-division-multiplexed. To this aim, we use a recirculating fiber loop and selectively obtain the sample pdf for the various bits in a given sequence, which allows separating the intersymbol interference (ISI) effects. Our measurements confirm a recent theoretical simplified model, suggesting that, under the above conditions, a generalized analytic form is a good approximation of the true pdf, provided that a pattern-dependent effective noise density and noiseless signal value are assumed: all the pdfs estimated from the experimental data are indeed well fitted by this analytic form. Moreover, when nonlinear effects become dominating, the analytic form is still fitting properly the data histograms, showing, however, that the effective noise density increases. In the above regime, we clearly observe that ISI also affects the increase of the effective noise density.     

Monitoring the Channel Formation in Organic Field‐Effect Transistors via Photoinduced Charge Transfer

Conducting channel formation in organic field‐effect transistors (OFETs) is considered to happen in the organic semiconductor layer very close to the interface with the gate dielectric. In the gradual channel approximation, the local density of accumulated charge carriers varies as a result of applied gate bias, with the majority of the charge carriers being localized in the first few semiconductor monolayers close to the dielectric interface. In this report, a new concept is employed which enables the accumulation of charge carriers in the channel by photoinduced charge transfer. An OFET employing C₆₀ as a semiconductor and divinyltetramethyldisiloxane‐bis(benzocyclobutene) as the gate dielectric is modified by a very thin noncontinuous layer of zinc‐phthalocyanine (ZnPc) at the semiconductor/dielectric interface. With this device geometry, it is possible to excite the phthalocyanine selectively and photogenerate charges directly at the semiconductor/dielectric interface via photoinduced electron transfer from ZnPc onto C₆₀. Thus the formation of a gate induced and a photoinduced channel in the same device can be correlated.     

Immunocytochemical study of alpha 1 and beta 2/3 subunits of GABAA receptors in freehand isolated vestibular Deiters' neurons

Vestibular Deiters' neurons have been isolated from bovine brain by the Hydén's freehand dissection technique and challenged with monoclonal antibodies directed toward the alpha 1 and beta 2/3 subunits of the GABAA receptors. Subsequent challenge with fluorescent secondary antibodies and confocal microscopy allowed the study of the cellular distribution of such subunits. In Deiters' neurons the beta 2/3 subunit displayed a clear presence all along the cell body profile and the initial parts of the dendrites. The alpha 1 subunit was found highly present all over the cell interior except the nuclear profiles. The strong presence inside the cells possibly masked its presence on the plasma membrane. However, in part of the cells studied a distinct presence on the plasma membrane was evident. This subunit was visualized also all along the long dendrites of these neurons. The approach we describe here, involving freehand isolated mature neurons from adult animals, may allow a better characterization of the tridimensional distribution of different types of neuronal GABAA receptors in the respect of the approach with brain slices.     

Synthesis of scanning electron microscopy images by high performance computing for the metrology of advanced CMOS processes

Scanning electron microscopy is still the technique of choice for imaging and for in-line measurement of critical dimensions and overlay accuracy in most of the core technology processes. In particular, critical dimension microscopy provides information about design template matching and edge placement errors through links with design having proven beneficial effects on process yield and product reliability. In this paper, the use of high performance computing is demonstrated to simulate linescans and 2D secondary electron images to be used in optical proximity error correction strategies for nanometer scale technologies.     

State‐of‐the‐Art Neutral Tint Multichromophoric Polymers for High‐Contrast See‐Through Electrochromic Devices

Two new multichromophoric electrochromic polymers featuring a conjugated EDOT/ProDOT copolymer backbone (PXDOT) and a reversible Weitz‐type redox active small molecule electrochrome (WTE) tethered to the conjugated chain are reported here. The careful design of the WTEs provides a highly reversible redox behavior with a colorless red switching that complements the colorless blue switching of the conjugated backbone. Subtractive color mixing successfully provides high performing solution processable polymeric layers with colorless neutral tint switchable limiting states for application in see‐through electrochromic devices. Design, synthesis, comprehensive chemical and spectroelectrochemical characterization as well as the preparation of a proof‐of‐concept device are discussed.     

Hierarchically Structured Magnetic Nanoconstructs with Enhanced Relaxivity and Cooperative Tumor Accumulation

Iron oxide nanoparticles are formidable multifunctional systems capable of contrast enhancement in magnetic resonance imaging, guidance under remote fields, heat generation, and biodegradation. Yet, this potential is underutilized in that each function manifests at different nanoparticle sizes. Here, sub‐micrometer discoidal magnetic nanoconstructs are realized by confining 5 nm ultra‐small super‐paramagnetic iron oxide nanoparticles (USPIOs) within two different mesoporous structures, made out of silicon and polymers. These nanoconstructs exhibit transversal relaxivities up to ≈10 times (r ₂ ≈ 835 mm ^?1 s^?1) higher than conventional USPIOs and, under external magnetic fields, collectively cooperate to amplify tumor accumulation. The boost in r ₂ relaxivity arises from the formation of mesoscopic USPIO clusters within the porous matrix, inducing a local reduction in water molecule mobility as demonstrated via molecular dynamics simulations. The cooperative accumulation under static magnetic field derives from the large amount of iron that can be loaded per nanoconstuct (up to ≈65 fg) and the consequential generation of significant inter‐particle magnetic dipole interactions. In tumor bearing mice, the silicon‐based nanoconstructs provide MRI contrast enhancement at much smaller doses of iron (≈0.5 mg of Fe kg^?1 animal) as compared to current practice.     

SCR operation mode of diode strings for ESD protection

Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under static and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are regarded, exploited and optimised.     

Interferential lithography of 1D thin metallic sinusoidal gratings: Accurate control of the profile for azimuthal angular dependent plasmonic effects and applications

Nonlinear processes involved in the manufacture of nominally sinusoidal surface relief diffraction gratings generated by interference lithography can introduce distortions into the profile of these surfaces. Such distortions may dramatically affect both the specular reflectivity and diffracted efficiencies from such a surface [H. Raether, Phys. Thin Film 9 (1977) 145–261]. We shall consider in particular the case of metallic gratings used to investigate plasmonic effects that can be engineered for bio-sensing applications. To investigate these effects, interference lithography (IL) has been used for the generation of profile controlled sinusoidal plasmonic crystals. IL exposure contrast study has been performed to control the amplitude oscillation and the surface roughness quality. Bi-metallic layer of silver and gold have been systematically deposited with different film thicknesses. A comprehensive numerical model that studies the optical coupling to surface plasmon polaritons on Ag/Au gratings has been undertaken for the simulation of the reflectivity and azimuthal angle dependence [Z. Chen, I.R. Hooper, J.R. Sambles, J. Opt. A: Pure Appl. Opt. 10 (1) (2008) 015007]. This computation illustrates the sensitivity of individual features to specific harmonic components of the surface, for surface plasmon resonances recorded in both the zeroth and higher diffracted orders. The roughness surface control after development and after bi-metallic evaporation strongly contributes to tighten the width of the reflectivity peak. Optimization process has shown that for an Ag (37 nm) and Au (7 nm) metallic bilayer, a semi-amplitude of 20 nm provides the best reflectivity.     

Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices

In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability.