An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.     

Electrical characteristics of (<Emphasis Type="Italic">p</Emphasis>)3C-SiC-(<Emphasis Type="Italic">n</Emphasis>)6H-SiC heterojunctions

The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.     

Sparkless discharge in dense gases with preionization by a low-energy electron beam of a barrier open discharge

A highly stable sparkless discharge can be obtained using preionization by an electron beam, photons, and plasma electrons formed in a barrier open discharge, for which a grid electrode (that also serves as a cathode for the main discharge) is situated immediately on a dielectric-coated electrode surface. In the standard gas mixture for an ArF laser at a pressure of 2.5 bar, an energy deposition of 2.5 J/cm³ in a 12-ns pulse at a specific power of 210 MW/cm³ was achieved. The results are of interest for the development of technological excimer lasers operating at a high pulse repetition rate.     

DBS电视接收机低中频与直接转换调谐器的比较

CMOS技术是把L波段卫星调谐器、解调器和其它功能整合至低成本、高效能单芯片的关键。本文将探讨新型低中频和传统零中频DBS调谐器架构在单芯片DBS射频前端设计中的优缺点。     

Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates

Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (～1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films.