Experimental characterisation of the drying effect on uniaxial mechanical behaviour of mortar

The main objective of this present study was to evaluate, for a standard mortar, the drying effect on its mechanical behaviour. Numerous uniaxial compression tests were thus performed with loading-unloading cycles. They were carried out on different samples previously preserved under various conditions of conservation: preserved from desiccation, air drying and rapid drying at 60°C. The obtained results showed significant influences of these conditions on the material behaviour (increase in strength, decrease in Young's modulus and Poisson's ratio) and the necessity of taking into account the coupling effects between mechanical—poromechanical behaviours and drying.     

Analysis of the mechanism of die soldering in aluminum die casting

A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds. The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing die soldering are suggested.     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

The X<Superscript>+</Superscript> trion in a system with spatial separation of the charge carriers

A system composed of two heavy holes located in a two-dimensional (2D) quantum well (QW) and bound via mediation of an electron in a neighboring 2D QW is considered. Using a simple qualitative trial wave function, the ground-state energy of this kind of X⁺ trion is determined in the infinite-hole-mass approximation as a function of the QW spacing. Coordinate dependence of the effective potential binding the holes to each other is calculated for different values of QW spacing. In the adiabatic approximation, a set of dependences describing the X⁺ trion binding energy as a function of the electron mass to the hole mass ratio is obtained. Several estimates for the trion binding energy in GaAs-and ZnSe-based double-QW heterostructures are given.     

Photosensitivity of surface barrier structures based on Cu(In,Ga)Se<Subscript>2</Subscript> films grown by codeposition in vacuum

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se₂ type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.     

Intergranular corrosion of a light aircraft aluminum alloy propeller

Examination of the wreckage of a light aircraft revealed that approximately 20 cm was missing from one tip of the aluminum alloy propeller. Fractographic and metallographic examination of the remaining portion of the propeller revealed extensive grain-boundary separation in the vicinity of the fracture, and grain edges and corners rounded by corrosion on the fracture surface. Energy dispersive X-ray analysis (EDXA) revealed fluorine on, and in the vicinity of, the fracture surface. In the ensuing litigation, it was asserted that the crash occurred because the propeller fractured in flight as the result of intergranular attack caused by the use of a fluorine-bearing cleaner.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Value analysis of intermittent generation sources from the systemoperations perspective

The objective of this study is to determine the economic and operational impact on energy cost of incorporating large photovoltaic (PV) and wind energy conversion systems (WECS) into the electric utility generation mix. In most cases, PV and WECS power outputs are subtracted from the utility load with the expectation that conventional generation would meet the residual load. This approach is valid for small penetration levels and/or for PV and WECS facilities connected near load centers, However, several constraints such as thermal generation characteristics, fuel supply and delivery, spinning reserve requirements, and hydro availability are not adequately represented in this process. To determine the optimal value of large-scale PV and WECS applications, a new methodology that would take into account the aforementioned constraints as well as a more global penetration is developed. Results indicate that while high hydro availability increases PV penetration levels, high ramping rates can also significantly increase penetration levels     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.