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71.
Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm2) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (1018 cm−3) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10−7 Ω cm2 at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.  相似文献   
72.
A system composed of two heavy holes located in a two-dimensional (2D) quantum well (QW) and bound via mediation of an electron in a neighboring 2D QW is considered. Using a simple qualitative trial wave function, the ground-state energy of this kind of X+ trion is determined in the infinite-hole-mass approximation as a function of the QW spacing. Coordinate dependence of the effective potential binding the holes to each other is calculated for different values of QW spacing. In the adiabatic approximation, a set of dependences describing the X+ trion binding energy as a function of the electron mass to the hole mass ratio is obtained. Several estimates for the trion binding energy in GaAs-and ZnSe-based double-QW heterostructures are given.  相似文献   
73.
Polycrystalline Cu(In,Ga)Se2 (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se2 type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.  相似文献   
74.
Examination of the wreckage of a light aircraft revealed that approximately 20 cm was missing from one tip of the aluminum alloy propeller. Fractographic and metallographic examination of the remaining portion of the propeller revealed extensive grain-boundary separation in the vicinity of the fracture, and grain edges and corners rounded by corrosion on the fracture surface. Energy dispersive X-ray analysis (EDXA) revealed fluorine on, and in the vicinity of, the fracture surface. In the ensuing litigation, it was asserted that the crash occurred because the propeller fractured in flight as the result of intergranular attack caused by the use of a fluorine-bearing cleaner.  相似文献   
75.
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.  相似文献   
76.
77.
Martensite transformations proceeding in mechanically loaded TiNi-based alloys account for an “anomalous” character of the acoustic emission from the material, whereby cyclic transformations during the growth of mechanical stress in the course of the direct transition is accompanied by an increase, rather than by a decrease, in the acoustic emission energy. This behavior of the acoustic emission is evidence of a significant influence of the external stresses on the martensite transformations and the related energy dissipation process.  相似文献   
78.
79.
In the present work, the distribution of the random toughness characteristics (i.e. critical energy release rate, G1c) has been evaluated on the basis of experimental observations. Fracture test results from three groups of geometrically similar concrete specimens of size (width×total depth×thickness), 420×420×50–1680×1680×200 mm3, made with different maximum aggregate size of 9.5, 19, 38, and 76 mm were analyzed using a recently proposed distribution of extremes. In applications of probability, it is important to use an appropriate distribution type and adequate techniques for estimating the parameters of distribution. In this study, a new type distribution of minima is employed for probability computations. It was noticed that the entropy of distribution increases with the crack length, i.e. the uncertainty of toughness, G1c, value increases with crack length. A non-linear reduction of the maximum allowable splitting force with the defect size, a, was noticed. For large specimens, the maximum allowable splitting load is more sensitive to the required reliability level than that for small specimens. Reliability increases with aggregate size when all other conditions were constant.  相似文献   
80.
The behavior of two series of concrete slabs exposed to sulfate-bearing soils was investigated by a numerical model called STADIUM. In addition to the diffusion of ions and moisture, the model also accounts for the effects of dissolution/precipitation reactions on the transport mechanisms. The simulations yielded by the model were compared to the actual degradation of the slabs after 8 years of exposure. The microstructural alterations of concrete resulting from the penetration of magnesium, chloride and sulfate ions were studied by backscatter mode scanning electron microscope observations and energy-dispersive X-ray analyses. The comparison of both series of data indicates that the model can reliably predict the various features of the microstructural alterations of concrete.
Résumé Le comportement de deux séries de dalles sur sol en béton exposées à des sols chimiquement agressifs a été étudié à l'aide d'un code de calcul numérique appelé STADIUM. Ce modèle permet de décrire le transport couplé de l'eau et des ions dans des matériaux poreux non-saturés en prenant en considération l'influence des réactions chimiques. Les résultats des simultations de la dégradation du béton après huit ans d'exposition à des ions chlore, sulfate et magnésium. Les observations ont été réalisées par microscopie électronique à balayage. Des analyses par dispersion des rayons X ont également été effectuées. Les données démontrent clairement que le modèle perment de prédire avec précision le comportement du béton soumis à différents types d'agression chimique.


Editorial Note Laval University (Canada) is a RILEM Titular Member. Prof. J. Marchand was awarded the 2000 Robert L'Hermite Medal. He is Editor in Chief for Concrete Science and Engineering and Associate Editor for Materials and Structures. He participates in RILEM TC 186-ISA ‘Internal Sulfate attack’.  相似文献   
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