Modeling of dibenzothiophene oxidative desulfurization using response surface methodology

The effect of reaction temperature, mixing speed and oxidant to catalyst volume ratio, including their interactions on the oxidative desulfurization of dibenzothiophene by using response surface methodology was studied. Hydrogen peroxide was used as oxidant and acetic acid as catalyst. The obtained model accurately predicts conversion of dibenzothiophene and the best conversion of 98.7% was observed at temperature 70°C, mixing speed of 1250 rpm and oxidant to catalyst volume ratio of 1:1. At high temperatures, a major limitation of the desulfurization process is the mass transfer and the high mixing speed is needed to achieve an efficient process.     

High Definition Digital Fabrication of Active Organic Devices by Molecular Jet Printing

We introduce a high resolution molecular jet (MoJet) printing technique for vacuum deposition of evaporated thin films and apply it to fabrication of 30 μm pixelated (800 ppi) molecular organic light emitting devices (OLEDs) based on aluminum tris(8‐hydroxyquinoline) (Alq₃) and fabrication of narrow channel (15 μm) organic field effect transistors (OFETs) with pentacene channel and silver contacts. Patterned printing of both organic and metal films is demonstrated, with the operating properties of MoJet‐printed OLEDs and OFETs shown to be comparable to the performance of devices fabricated by conventional evaporative deposition through a metal stencil. We show that the MoJet printing technique is reconfigurable for digital fabrication of arbitrary patterns with multiple material sets and high print accuracy (of better than 5 μm), and scalable to fabrication on large area substrates. Analogous to the concept of “drop‐on‐demand” in Inkjet printing technology, MoJet printing is a “flux‐on‐demand” process and we show it capable of fabricating multi‐layer stacked film structures, as needed for engineered organic devices.     

A high accuracy reactive power and reactive energy meter

Contents A high accuracy instrument for reactive power and reactive energy measurements in a single phase power network is described in the paper. The measurement principle is in accordance with IEC recommendation. Test results show that in the range of 1 to 100% of the input current the accuracy of the meter is better than 100 ppm for frequency variations of ±5% around the nominal frequency. The instrument could be used as a single-phase reactive power and reactive energy standard. A three phase version of the instrument could be used as a standard or as a revenue meter because of its high accuracy, simple design and anticipated low cost.

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Ein Meßgerät höher Präzision zur Blindleistungs- und Blindverbrauchsmessung

Übersicht In diesem Artikel wird ein Meßgerätu zur Blindleistungs- und Blindenergiemessung in Einphasen-Wechselstromnetzen beschrieben. Das Meßprinzip stimmt mit der Vorschrift der IEC überein. Die Meßergebnisse zeigen, daß im Bereich von 1 bis 100% des Eingangsstroms bei Frequenzvariationen von ±5% von der Nennfrequenz die Meßfehler des Gerätes kleiner als 0.01% sind. Das Meßgerät könnte als ein Normal für Blindleistungs- und Blindenergievergleichsmessungen in Einphasensystemen verwendet werden. Eine Dreiphasenversion dieses Meßgerätes könnte wegen seiner hohen Genauigkeit und des einfachen und preiswerten Aufbaus als ein Normal oder als Verbrauchsmeßgerät für die Kostenberechnung benutzt werden.

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Institute for National Measurement Standards, National Research Council     

Voltammetric and galvanostatic studies of hydrous and anhydrous iridium oxide films

Electrolytically grown hydrous oxide films on iridium wire electrodes have been thermally treated from 473 to 773 K. Anhydrous oxide films formed by this treatment have been subjected to cathodic polarization at the potential of the hydrogen evolution reaction, square-wave pulsing of potential from –0.25 to +1.25 V with respoect to SCE and to anodic galvanostatic polarization in 0.5 mol dm^–3 H₂SO₄. Cathodic pretreatment caused an increase of the voltammetric charge in the oxide formation region while the square-wave pulsing formed a hydrous oxide film whose voltammetric charge was superimposed on the charge of the anhydrous oxide film. Both procedures restored the hydrophilic nature of the electrode/solution interface. Potential-time curves during anodic galvanostatic polarization served as a diagnostic criterion for the stability and the state of the oxide film.     

A Parallel Hill Climbing Algorithm for Pushing Dependent Data in Clients–Providers–Servers Systems

The up-link bandwidth in satellite networks and in advanced traffic wireless information system is very limited. A server broadcasts data files provided by different independent providers and accessed by many clients in a round-robin manner. The clients who access these files may have different patterns of access. Some clients may wish to access several files in any order (AND), some wish to access one out of several files (OR), and some clients may access a second file only after accessing another file (IMPLY). The goal of the server is to order the files in a way that minimizes the access time of the clients given some a priori knowledge of their access patterns. An appropriate clients–servers model was recently proposed by Bay-Noy, Naor and Schieber. They formulated three separate problems and proposed an algorithm that evaluates certain number of random permutations and chooses the one whose access time is minimized. In this paper, we formulate a combined AOI (AND-OR-IMPLY) problem, and propose to apply a parallel hill climbing algorithm (to each of the four problems), which begins from certain number of random permutations, and then applies hill climbing technique on each of them until there is no more improvement. The evaluation time of neighboring permutations generated in hill climbing process is optimized, so that it requires O(n) time per permutation instead of O(n ²) time required for evaluating access time of a random permutation, where n is the number of files the server broadcasts. Experiments indicate that the parallel hill climbing algorithm is O(n) times faster that random permutations method, both in terms of time needed to evaluate the same number of permutations, and time needed to provide a high quality solution. Thus the improvement is significant for broadcasting large number of files.     

A generalized correlation attack on a class of stream ciphers based on the Levenshtein distance

A statistical approach to cryptanalysis of a memoryless function of clock-controlled shift registers is introduced. In the case of zero-order correlation immunity, an algorithm for a shift register initial state reconstruction based on the sequence comparison concept is proposed. A constrained Levenshtein distance relevant for the cryptanalysis is defined and a novel recursive procedure for its efficient computation is derived. Preliminary experimental results are given and open theoretic problems are discussed.Following [11], a Boolean function f(x ₁,..., x _n) is said to be mth-order correlation immune if m is the maximum integer such that the random variable f(X ₁,..., X _n) is statistically independent of every set of m random variables chosen from the balanced and independent binary random variables X ₁,..., X _n.     

New neural method for bias dependent noise modelling of microwave transistors

A new method for accurate determination of noise parameters of microwave transistors for various bias conditions is proposed in this paper. The proposed model consists of a transistor empirical noise model (modification of Pospieszalski’s noise model) and two artificial neural networks. With the aim to avoid extraction of the empirical model parameters for each bias point, an artificial neural network is used to introduce bias-dependence of the equivalent circuit parameters. Accuracy of such bias-dependent model is further improved by using an additional neural network aimed to correct the noise parameters’ values. The proposed modeling approach is exemplified by modelling of a MESFET device in packaged form. The noise parameters obtained by the simulation agree well with the measured data.     

The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode

A method for calculation the impulse response of a depletion layer of a semiconductor device based on Ramo's theorem is described. Using this method the impulse response of a reach-through avalanche photodiode is derived.