A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 /spl mu/m CMOS technology

A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-/spl mu/m CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum noise figure of 3.9 dB at 24.3 GHz. The supply voltage and supply current are 1 V and 14 mA, respectively. To the author's knowledge, this LNA demonstrates the lowest noise figure among the reported LNAs in standard CMOS processes above 20 GHz.     

Accelerated wear testing with a microfabricated surface to evaluate the lubrication ability of biomolecules on polyethylene

Wear of ultrahigh‐molecular‐weight polyethylene (UHMWPE) and wear‐particle‐induced osteolysis and bone resorption are the major factors causing the failure of total joint replacements. It is feasible to improve the lubrication and reduce the wear of artificial joints. We need further understanding of the lubrication mechanism of the synovial fluid. The objective of this study is to evaluate the lubricating ability of three major components in the synovial fluid: albumin, globulin, and phospholipids. An accelerated wear testing procedure in which UHMWPE is rubbed against a microfabricated surface with controlled asperities has been developed to evaluate the lubrication behavior. An analysis of the wear particle dimensions and wear amount of the tests has provided insights for comparing their lubrication performance. It is concluded that the presence of biomolecules at the articulating interface may reduce friction. A higher concentration of a biological lubricant leads to a decrease in the wear particle width. In addition, in combination with the wear results and mechanical analysis, the roles of individual biomolecules contributing to friction and wear at the articulating interface are discussed. These results can help us to identify the role of the biomolecules in the boundary lubrication of artificial joints, and further development of lubricating additives for artificial joints may be feasible. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

Estimation and hypothesis testing of treatment effects in animal reproductive toxicology studies

Healy (1) and Dempster et al. (8) proposed statistical methods to evaluate the treatment effects in animal reproductive toxicology research. Both methods assume homogeneous variance for the dams and the pups, respectively, in all the treatment groups. In this paper, via mixed effect modeling, we propose a method to estimate the treatment effects allowing heterogeneous variances for the dams and the pups, respectively, in different treatment groups. Covariates will also be included in the model. A procedure to test the fixed effects is also discussed. An example from an animal reproductive toxicological study is used to illustrate the procedures.     

Feasibility of adding a personal communications network to anexisting fixed-service microwave system

This paper examines the feasibility of adding a personal communication network (PCN) to a frequency band which is already allocated to fixed-service microwave systems. To achieve this goal, spread spectrum techniques are used to spread narrowband PCN signals into wideband. The forward and reverse link performance of PCN users under the influence of the microwave system and the influence of PCN users on the microwave system are both examined. It is proven that spectrum sharing between the PCN network and microwave systems is indeed feasible. Although our analysis is done based upon the consideration of only one microwave system, it can be easily extended to allow the appearance of two or more microwave systems     

Multicluster,mobile, multimedia radio network

A multi-cluster, multi-hop packet radio network architecture for wireless adaptive mobile information systems is presented. The proposed network supports multimedia traffic and relies on both time division and code division access schemes. This radio network is not supported by a wired infrastructure as conventional cellular systems are. Thus, it can be instantly deployed in areas with no infrastructure at all. By using a distributed clustering algorithm, nodes are organized into clusters. The clusterheads act as local coordinators to resolve channel scheduling, perform power measurement/control, maintain time division frame synchronization, and enhance the spatial reuse of time slots and codes. Moreover, to guarantee bandwidth for real time traffic, the architecture supports virtual circuits and allocates bandwidth to circuits at call setup time. The network is scalable to large numbers of nodes, and can handle mobility. Simulation experiments evaluate the performance of the proposed scheme in static and mobile environments.This work was supported by the U.S. Department of Justice/Federal Bureau of Investigation, ARPA/CSTO under Contract J-FBI-93-112 Computer Aided Design of High Performance Wireless Networked Systems.     

High-speed Modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-/spl mu/m emission wavelength

1.27-/spl mu/m InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C.     

Calculation of the stress intensity factor for arbitrary finite cracked body by using the boundary weight function method

The state of thermal stresses for a periodic two-layered elastic space weakened by an interface thermally insulated Griffith crack and loaded by concentrated line heat sources is investigated. The analysis is performed within the framework of the homogenized model with microlocal parameters. The stress intensity factors at the crack tips are determined. Two examples of the application of the results obtained are detailed.     

GaAs-GaAlAs heterostructure single-mode channel-waveguide cutoff modulator and modulator array

A GaAs single-mode channel-waveguide cutoff modulator that utilizes a GaAs-GaAlAs heterostructure and a linear array of such modulators are reported for the first time. We have measured a cutoff voltage as low as 9.0 V and an extinction ratio greater than 20 dB at an optical wavelength of 1.3 μm in a basic modulator that utilized a GaAs-Ga0.93Al0.07As heterostructure with a 0.9 μm thick GaAs epitaxial layer together with a ridge channel 2.5 mm in length and 5.0 μm in width. We have also succeeded in the realization of a high packing density (500 channels/cm) linear array of such cutoff modulators in the same GaAs substrate with equally satisfactory results. An RF bandwidth of 2.5 GHz has also been measured with the elementary modulator of such array. As in the case for LiNbO3substrates, the GaAs-based integrated optic modules that result from integration of such cutoff modulator arrays, microlens arrays, and planar acoustooptic or electrooptic Bragg diffraction grating arrays in a common substrate may be used to perform multiport switching, computing, and RF signal processing.     

A new process of fabricating inverted-staggered tri-layer thin-filmtransistors

A new method of fabricating a-Si:H TFT with etching-stop structure has been proposed. Only one plasma-enhanced chemical vapor deposition is required in this new method and a PH₃/H₂ plasma treatment during the deposition has been used to form the TFT contact and thus saved another plasma deposition. With this method, a TFT of 500 Å active layer has been fabricated successfully. The drain current and saturation mobility of this device is 2.4×10^-7 A and 0.1 cm²/V sec, respectively, which is comparable to the conventional fabricating method. The plasma treatment will also form an additional leakage path on the TFT top surface and increase the TFT subthreshold slope. However, a current of less than 1 pA at V_G=-2.4 V can still be obtained. The possible mechanism of the contact formation by the plasma treatment is also discussed