CW Operation of a Submillimeter Wave Gyrotron (Gyrotron Fu IV) for High Stability of the Output Frequency

The first cw operation of our submillimeter wave gyrotron (Gyrotron FU IV) using a 12 T superconducting magnet has been successfully carried out. Output power is more than 20 W at a frequency of 301 GHz in the TE₀₃₁ resonant cavity mode. Time-resolved frequency measurement s shows that the frequency fluctuation of the gyrotron output is smaller than 2 MHz. This frequency fluctuation is mainly due to the fluctuation in the output voltage of the power supply.     

Electrical properties of nickel in silicon

Electrical activity and energy levels as well as diffusion properties of nickel in silicon have not yet been reliably established. In this paper, we investigated the diffusion and the electrical properties of nickel in silicon to confirm that nickel is electrically active and introduces one acceptor and one donor level by combined measurements of Hall coefficient and DLTS, and measurements of the distribution of electrically active nickel in various silicon diodes by DLTS. The former experiments show that bothn- andp- type silicon are compensated by nickel and that nickel introduces an acceptor level ofE _c-0.47 ± 0.04 eV and a donor level ofE _v +0.18 ± 0.02 eV. The concentrations of these two levels are almost identical over the diffusion temperatures from about 800 to 1100° C, indicating that these donor and acceptor levels are due to different charge states of the same nickel center. In the distribution measurements of electrically active nickel in silicon diodes, we inspected how nickel can be observed by DLTS. It was found that the nickel diffusion intop- n junction is rather complicated, the distribution profiles of nickel in the vicinity of thep- n junction being markedly influenced by an additional heating at elevated temperatures after the nickel diffusion. This gives evidence that the difference in silicon devices used in various studies could give rise to different results.     

Increase in photovoltaic performances of dye-sensitized solar cells—Modification of interface between TiO2 nano-porous layers and F-doped SnO2 layers

In order to improve the physical and chemical contacts between a porous TiO₂ layer and an F-doped SnO₂ transparent conductive layer (FTO), the surface of the FTO layer is polished. After polishing, the surface roughness decreased. However, light transmittance and sheet resistance did not vary largely. The short circuit current (J_sc) and efficiencies increased after the FTO was polished. It was found that the interfacial charge transfer between a TiO₂ layer and an FTO layer decreased by impedance measurement, which suggests that contacts between an FTO and a TiO₂ layer are improved because of the flatted surfaces or removal of electrical impurities. We propose one of the industrially important phenomena that surface polishing of FTO is one of the ways to increase photovoltaic performances for DSCs.     

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.     

Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

High-speed demonstration of an output interface driver forsingle-flux quantum systems

The high-speed operation of a one-channel output interface for a single-flux quantum (SFQ) system has been demonstrated. The interface consisted of a Josephson latching driver, a room-temperature semiconductor amplifier, and a decision circuit module. The Josephson latching driver was fabricated by using a 2.5-kA/cm² standard Nb junction process and used to amplify an SFQ pulse into a 5.5-mV level signal at 10 Gb/s. The interface converted the SFQ pulse signal into a nonreturn-to-zero signal having an amplitude of 1 V at 10 Gb/s     

Finding module-based gene networks with state-space models - Mining high-dimensional and short time-course gene expression data

This study explores some problems to analyze time-course gene expression data by state-space models (SSMs). One problem is regarding the methods of parameter estimation and determination of the dimension of the internal state variable. Although several methods have been applied, there are few literature studies which with to compare them. Thus, this paper gives a brief review of the existing literature that use the SSM to analyze the gene expression time-course data. Another problem is the identifiability of the model. If the parameters of SSMs are simply estimated without any constraints for parameter space, they lack identifiability. To identify a system uniquely, it requires a specific algorithm to estimate the parameters with some constraints. For that purpose, an identifiable form of SSMs and an algorithm for estimating parameters are derived. The last problem is the extraction of biological information by interpreting the estimated parameters, such as mechanism of gene regulations at the module level. For that one, this paper explores methods to extract further information using the estimated parameters, that is, reconstruction of a module network from time-course gene expression data     

Porcine enamel matrix derivative enhances the formation of reparative dentine and dentine bridges during wound healing of amputated rat molars

We examined the biological effects of porcine enamel matrix derivative (EMD; Emdogain) on the formation of reparative dentine and dentine bridges in rat molars after pulp amputation. The pulp chambers of upper molars of Wistar rats were perforated and the amputated pulp surfaces were directly capped with either EMD or its carrier propylene glycol alginate (PGA) as control. The cavities were then restored with glass-ionomer cement. On post-amputation days 4-30, the dissected maxillae were examined by light and electron microscopy. In PGA-capped pulp, reparative dentine had been formed over the dentine walls under the prepared cavity on day 7 post-amputation and its thickness extended until day 30. On day 30, as well as reparative dentine formation, diffuse calcification had occurred beneath the amputated wound surfaces. Dentine bridge formation under the amputated coronal pulp surface was observed in 18.2% of amputated pulp on day 30. In EMD-capped pulp, reparative dentine had already been formed by odontoblast-like cells over the dentine walls, already on day 4 post-amputation, and its thickness extended until day 30. The Ca and P weight % and Ca/P ratio of reparative dentine matrix were similar to those of pre-existing dentine matrix, and these values were not different between PGA and EMD-capped pulp. Dentine bridge formation was observed in 27.3% of EMD-capped pulp on day 30. Our results suggest that EMD enhances the formation of both reparative dentine and dentine bridges during wound healing of amputated rat molar pulp.     

Aging time dependence of catastrophic optical damage (COD) failureof a 0.98-μm GaInAs-GaInP strained quantum-well laser

In this paper, we studied the aging time dependence of the catastrophic optical damage (COD) failure of an Al-free uncoated 0.98-μm GaInAs-GaInP strained quantum-well laser with an injection current as a parameter. Based on the stress-strength model, we first investigated experimentally the dependence of the critical power level (CPL) at which COD would take place upon the aging time. Then applying a statistical treatment to this result, we found for the first time that CPL data at each aging time could be considered to distribute according to the Weibull statistics, and the decrease rate of the CPL with the aging time depended very strongly on the injection current. Finally, using the relationship between the decrease rate of the CPL with the aging time and the current, we predicted roughly the time of a COD failure occurrence for both large and small current cases. As a result, we clarified that for our Al-free uncoated 0.98-μm laser, a COD failure became a fatal problem in the case of a large-current (high-power) operation     

A 2-V, 1-10 GHz BiCMOS transceiver chip for multimode wirelesscommunications networks

This paper concerns the design consideration, fabrication process, and performance results for an ultra-broadband, low-voltage, low-power, BiCMOS-based transceiver chip for cellular-satellite-LAN wireless communication networks. The transceiver chip incorporates an RF amplifier, a Gilbert down-mixer, and an IF amplifier in the receive path, and an IF amplifier, a Gilbert up-mixer, and an RF amplifier in the transmit path. For an RF frequency in the 1-10 GHz band and an IF frequency in the 100-1000 MHz band, the developed transceiver chip consumes less than 60 mW at 2 V, to yield a downconversion gain of 40 dB at 1 GHz and 10 dB at 10 GHz and an upconversion gain of 42 dB at 1 GHz and 11 dB at 10 GHz. To avoid possible start-up problems caused during “stand-by” to “enable” mode transition, a simple switching technique is employed for enabling either the receive or the transmit path, by changing the value of a reference voltage applied to both the down- and the up-mixers. While the developed transceiver chip exhibits the best performance for a dc supply voltage of 2 V, it shows a graceful degradation for a ±0.15 V voltage deviation. The transceiver's chip size is 1.04 mm×1.04 mm