Thin-film encapsulation of top-emission organic light-emitting devices with polyurea/Al2O3 hybrid multi-layers

We developed a room-temperature encapsulation process based on multi-stack of ultra thin Al₂O₃ and polyurea layers for top-emission organic light-emitting devices (TEOLEDs). Device structure, including a capping layer for refractive-index matching and a thick polyurea buffer layer, was optimized to enhance light extraction without distorting electroluminescence spectrum. The efficiency of a TEOLED encapsulated with 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers was better than that of a glass-encapsulated TEOLED, whereas their color coordinates were almost identical. Moreover, the half-decay lifetime of a TEOLED encapsulated with 5 pairs of Al₂O₃/polyurea layers was 86% of that of a glass-encapsulated TEOLED. Water vapor transition rate of 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers on PET film was measured as low as 5 × 10⁻⁴ g/m² day.     

Analysis of a Parasitic‐Diode‐Triggered Electrostatic Discharge Protection Circuit for 12 V Applications

In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic‐diode‐triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (V_t) of the proposed ESD protection circuit are improved by varying the length between the n‐well and the p‐well, and by adding n+/p+ floating regions. Moreover, the holding voltage (V_h) is improved by using segmented technology. The proposed circuit was fabricated using a 0.18‐μm bipolar‐CMOS‐DMOS process with a width of 100 μm. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the V_t of the proposed circuit increased from 14 V to 27.8 V, and V_h increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human‐body‐model surges at 7.4 kV and machine‐model surges at 450 V.     

Feature Detection and Simplification of 3D Face Data with Facial Expressions

We propose an efficient framework to realistically render 3D faces with a reduced set of points. First, a robust active appearance model is presented to detect facial features in the projected faces under different illumination conditions. Then, an adaptive simplification of 3D faces is proposed to reduce the number of points, yet preserve the detected facial features. Finally, the point model is rendered directly, without such additional processing as parameterization of skin texture. This fully automatic framework is very effective in rendering massive facial data on mobile devices.     

Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites

p-Type Yb _z Fe_4?x Co _x Sb₁₂ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of 10²⁰ cm^?3 to 10²¹ cm^?3. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites.     

Organic Phenolic Configurationally Locked Polyene Single Crystals for Electro‐optic and Terahertz Wave Applications

We investigate a configurationally locked polyene (CLP) crystal 2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile (OH1) containing a phenolic electron donor, which also acts as a hydrogen bond donor. The OH1 crystals with orthorhombic space group Pna2₁ (point group mm2) exhibit large second‐order nonlinear optical figures of merit, high thermal stability and very favorable crystal growth characteristics. Higher solubility in methanol and a larger temperature difference between the melting temperature and the decomposition temperature of OH1 compared to analogous CLP crystals, are of advantage for solution and melt crystal growth, respectively. Acentric bulk OH1 crystals of large sizes with side lengths of up to 1 cm with excellent optical quality have been successfully grown from methanol solution. The microscopic and macroscopic nonlinearities of the OH1 crystals are investigated theoretically and experimentally. The OH1 crystals exhibit a large macroscopic nonlinearity with four times larger powder second harmonic generation efficiency than that of analogous CLP crystals containing dimethylamino electron donor. A very high potential of OH1 crystals for broadband THz wave emitters in the full frequency range of 0.1–3 THz by optical rectification of 160 fs pulses has been demonstrated.     

Intrinsic bonding defects in transition metal elemental oxides

Gate dielectrics comprised of nanocrystalline HfO₂ in gate stacks with thin SiO₂/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO₂ and other transition metal elemental oxides are assigned to O-atom divacancies, clustered at internal grain boundaries. Three engineering solutions for defect reduction are identified: i) deposition of ultra-thin, <2 nm, HfO₂ dielectric layers, in which grain boundary formation is suppressed by effectively eliminating inter-primitive unit cell π-bonding interactions, ii) chemically phase separated high HfO₂ silicates in which inter-primitive unit cell p-bonding interactions are suppressed by the two nanocrystalline grain size limitations resulting from SiO₂ inclusions, and iii) non-crystalline Zr/Hf Si oxynitrides without grain boundary defects.     

High-Temperature Stability of Thermoelectric Skutterudite In0.25Co3FeSb12

The thermal stability of skutterudite-based thermoelectric modules is of great importance since they are used at elevated temperatures. This study examined the high-temperature stability of In-filled and Fe-doped skutterudites (In_0.25Co₃FeSb₁₂) as a function of the following aging variables: atmosphere (vacuum and air), temperature, and time. Sb-based oxides are produced preferentially on exposure to high temperatures in air. The oxide layer produced during aging at 823?K in air was much thinner than that produced during aging at 723?K in air. The formation of InSb is believed to retard the oxidation of Sb and act as an obstacle to the growth of the oxide layer. The CoSb₃-based skutterudites were stable at 823?K if they were not exposed to air, and InSb phases were not produced in the In_0.25Co₃FeSb₁₂ skutterudites.     

Inter‐carrier Interference Reduction Scheme for SFBC‐OFDM Systems

In this paper, we first analyze carrier‐to‐interference ratio performance of the space–frequency block coded orthogonal frequency‐division multiplexing (SFBC‐OFDM) system in the presence of phase noise (PHN) and residual carrier frequency offset (RCFO). From the analysis, we observe that conventional SFBC‐OFDM systems suffer severely in the presence of PHN and RCFO. Therefore, we propose a new inter‐carrier interference (ICI) self‐cancellation method — namely, ISC — for SFBC‐OFDM systems to reduce the ICI caused by PHN and RCFO. Through the simulation results, we show that the proposed scheme compensates the ICI caused by PHN and RCFO in Alamouti SFBC‐OFDM systems and has a better performance than conventional schemes.     

Femtojoule-Power-Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides

To realize the potential of Mott transition of multiphasic vanadium oxides (VO_x) for memory applications, the development of VO_x memtransistors on SiO₂ wafer is introduced. Through electrical characterizations, the volatile memory behaviors of the VO_x memtransistors are observed in both two- and three-terminal measurements. Their capacitive memory and resistive switching mechanisms are strongly related to the mixed VO_x/SiO₂ interface (called VSiO_x). VSiO_x supports the Mott transition in VO_x at low bias voltages (<0.5 V), leading to the low power consumption of the memtransistor. Moreover, the fast switching time (≈35 ns) and tunable memory retention with the synaptic functions (potentiation and depression) of the memtransistors (by using the gate and drain biases) are demonstrated. Overall, the findings open up major opportunities for constructing ultrafast and femto-joule power-consuming neuromorphic devices.