Radiation tolerance for the SMASH-series front-end chips for a silicon micro-strip detector

The radiation tolerance for prototype front-end chips designed for a silicon micro-strip detector was examined with a ⁶⁰Co irradiation source to establish an allowable range of the radiation dose. The irradiated front-end chips were SMA²SH-64A, a 64-channel preamplifier array; SMA²SH-1, a single-channel preamplifier circuit with a comparator; and Control-C, a digital-control chip for the preamplifiers.     

Diagnostics of TM010-mode microwave cavity discharges inCO2-N2-He laser gas mixtures. II. Measurement ofvibration temperature

For pt. I see ibid., vol., 31, no. 8, p. 1525-32 (1995). The plasma temperatures in microwave discharged CO₂-N₂-He laser gas mixtures were examined using the spectroscopic and electrostatic probe methods. A vibration temperature of N₂ molecules, obtained spectroscopically, was determined to be nearly 7000 K without gas circulation and to be nearly 4000 K at the mass flow rate of 4.2 kg/h. It is found that an efficiency of laser output power exceed 14% (RF to laser output power conversion ratio) below the vibration temperature of 4000 K. The values of vibration temperature obtained were higher than those reported in DC discharges     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Recovery of monomers and fillers from high-temperature-vulcanized silicone rubbers—combined effects of solvent, base and fillers

The depolymerization of high-temperature-vulcanized (HTV) silicone rubbers containing filler silica and alumina into cyclosiloxane monomers and spontaneous recovery of fillers were studied. First, HTV silicone rubber was treated with different types of solvents in the presence of KOH to find that a triad mixture of diethylamine, methanol and hexane was appropriate not only to dissolve the silicone rubber to a suspension but also to separate fillers completely by filtration. The filtrate was distilled to remove solvent first and then give pure cyclosiloxane monomers in 76–84% yields. Second, the rubbers were treated with other types of triad mixture of solvents and bases, e.g. tetramethylammonium hydroxide, hexane and diethylamine. After filtration, residue was again treated with the amine and hexane to recover clean fillers in 83–93% yields. Cyclosiloxane monomers were also obtained from the combined filtrates in 67–78% yields.     

Recovery retardation in equal channel angular pressed Al–Zr alloy during friction stir welding

The effect of Zr on reduction of hardness and microstructure in an FS weld of equal channel angular-pressed Al alloy was investigated. Zr addition to Al suppressed dynamic recovery in the thermomechanically affected zone and enabled retention of the high hardness of the ECA-pressed material throughout the weld.     

Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

Syntheses and structural properties of four Rb-aluminosilicate zeolites

Four types of Rb-aluminosilicate zeolites were hydrothermally synthesized in pure phase for the first time from Rb-aluminosilicate gels without using any organic structure-directing agent (SDA) under stirring conditions. The crystal structure of each zeolite was refined by Rietveld analysis of the X-ray diffraction (XRD) data. These crystal structures were confirmed to be Rb-mordenite, Rb-merlinoite, a new aluminosilicate zeolite with an ATT framework topology, and Rb-offretite denoted by RMA-1, RMA-2, RMA-3, and RMA-4, respectively. The Si/Al ratio of RMA-1 with an MOR topology varied from 5.3 to 8.0; however, the variation of the Si/Al ratios of the other zeolites was rather small. The crystal system of RMA-2 was tetragonal with space group I4/mmm, where two Rb sites were distributed at the center of an 8-membered ring (MR). On the other hand, two Rb sites in RMA-3 were located at the center of the 8-MR in small two cages. The structure of RMA-4 was identified as the OFF type with a local disorder or defect, which included a small amount of an intergrown ERI phase.     

Metastatic choriocarcinoma of the kidney discovered by refractory hematuria

A 53-year-old male suffered splenic infarction etiologically related to atrial fibrillation and non-obstructive hypertrophic cardiomyopathy. The main clinical manifestations were a one-month history of epigastric and left upper quadrant pain, with tenderness to palpation in the later zone. Laboratory tests revealed a slight leucocytosis (14.700) with left shift and a marked increase in LDH concentration (945 IU). Abdominal CAT and arteriography established the diagnosis, Echography proved normal. Patient evolution was satisfactory with conservative medical treatment. We conclude that splenic infarction should be considered in all cases of acute or chronic pain in the left hypochondrium. The diagnosis is established by CAT, arteriography and hepatosplenic gammagraphy. Medical management is initially advocated, surgery being reserved for those cases involving complications or in which diagnosis is not clear. Emphasis is placed on the main etiological, clinical, diagnostic and management characteristics of splenic infarction.