Mobile Learning

Works in progress from selected papers presented at the 2006 IADIS International Conference on Mobile Learning provide an overview of the diverse research being conducted in this field.     

Chip to Chip Bonding Using Cu Bumps Capped with Thin Sn Layers and the Effect of Microstructure on the Shear Strength of Joints

Chip to chip bonding techniques using Cu bumps capped with thin solder layers have been frequently applied to 3D chip stacking technology. We studied the effect of joint microstructure on shear strength. Joints were formed by joining Sn/Cu bumps on a Si die and Sn/Cu layers on another Si die at 245–330°C using a thermo-compression bonder. Three different types of microstructures were fabricated in the joints by controlling the bonding temperature and time, (1) a Sn-rich phase with a Cu₆Sn₅ phase at the Cu interfaces, (2) a Cu₆Sn₅ phase in the interior with a Cu₃Sn phase at the Cu interfaces, and (3) one single Cu₃Sn phase throughout the whole joint. The joint having a single Cu₃Sn phase had the highest shear strength. Specimens were aged up to 2000 h at 150°C and 180°C. During aging, the microstructures of all joints were transformed in a single Cu₃Sn phase. The shear strength of the joints was very sensitive to the formation of Cu₃Sn and microvoids. Microvoids formed in the solder joints with a Cu₆Sn₅ phase with and without a Sn-rich phase during aging and decreased the shear strength of the joints. Conversely, aging did not induce the formation of microvoids in the joints which originally had only a Cu₃Sn phase and the shear strength was not decreased.     

Near‐Optimum Blind Decision Feedback Equalization for ATSC Digital Television Receivers

This paper presents a near‐optimum blind decision feedback equalizer (DFE) for the receivers of Advanced Television Systems Committee (ATSC) digital television. By adopting a modified trellis decoder (MTD) with a trace‐ back depth of 1 for the decision device in the DFE, we obtain a hardware‐efficient, blind DFE approaching the performance of an optimum DFE which has no error propagation. In the MTD, the absolute distance is used rather than the squared Euclidean distance for the computation of the branch metrics. This results in a reduction of the computational complexity over the original trellis decoding scheme. Compared to the conventional slicer, the MTD shows an outstanding performance improvement in decision error probability and is comparable to the original trellis decoder using the Euclidean distance. Reducing error propagation by use of the MTD in the DFE leads to the improvement of convergence performance in terms of convergence speed and residual error. Simulation results show that the proposed blind DFE performs much better than the blind DFE with the slicer, and the difference is prominent at the trellis decoder following the blind DFE.     

Simple and Accurate Design of Low-Density Parity-Check Codes for Multi-Input Multi-Output Systems

In this paper we design an irregular low-density parity-check (LDPC) code for multiple-input multiple-output (MIMO) systems, using a simple extrinsic information transfer (EXIT) chart method. The MIMO systems considered are the optimal maximum a posteriori probability (MAP) detector and the suboptimal minimum mean square error soft-interference cancellation (MMSE-SIC) detector. The MIMO detector and the LDPC decoder exchange soft information and form a turbo iterative receiver. The EXIT charts are used to obtain the edge degree distribution of the irregular LDPC code which is optimized for the MIMO detector. It is shown that the performance of the designed LDPC code is better than that of conventional LDPC code which was optimized for either the Additive White Gaussian Noise (AWGN) channel or the MIMO channel without an explicit consideration of the given detector structure.     

The impacts of SILC and hot carrier induced drain leakage current on the refresh time in DRAM

This paper reports the temperature dependence of SILC and hot carrier induced drain leakage current, and their impact on the refresh time in Giga-bit level DRAM with practical considerations. SILC has been found to increase as the monitoring and stress temperature increases. Due to the generation of interface states, hot carrier induced pn junction leakage current and band-to-band tunneling current have been found to increase as the monitoring temperature increases.From the simulation results of a refresh circuit for Giga-bit level DRAM, it has been found that the increase of SILC with stress time is a dominant factor in refresh failure below 373K, and the pn junction leakage current will be a dominant factor at the high elevated temperature. It has been also observed that the increase of hot carrier induced drain leakage current can be a cause for the refresh failure.     

Self-Assembled Perovskite Nanoislands on CH3NH3PbI3 Cuboid Single Crystals by Energetic Surface Engineering

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI₃ (MA = CH₃NH₃⁺) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI₃ single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm² V⁻¹ s⁻¹. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.     

Joint Optimization of User Set Selection and Transmit Power Allocation for Orthogonal Random Beamforming in Multiuser MIMO Systems

When the number of users is finite, the performance improvement of the orthogonal random beamforming (ORBF) scheme is limited in high signal‐to‐noise ratio regions. In this paper, to improve the performance of the ORBF scheme, the user set and transmit power allocation are jointly determined to maximize sum rate under the total transmit power constraint. First, the transmit power allocation problem is expressed as a function of a given user set. Based on this expression, the optimal user set with the maximum sum rate is determined. The suboptimal procedure is also presented to reduce the computational complexity, which separates the user set selection procedure and transmit power allocation procedure.     

Design of a 3-D fully depleted SOI computational RAM

We introduce a three-dimensional (3-D) processor-in-memory integrated circuit design that provides progressively increasing processing power as the number of stacked dies increases, while incurring no extra design effort or mask sets. Innovative techniques for processor/memory redundancy and fast global bus evaluation are described. The architecture can be augmented with a nearest-neighbor physical 3-D communications network that can substantially reduce interconnect lengths and relieve routing congestion. The test chip, with 128 Kb of memory and 512 processing elements (PEs) on two fully depleted silicon-on-insulator (SOI) dies, can achieve a peak of 170 billion-bit-operations per second at 400 MHz.     

A movable safety zone scheme in urban fiber-optic microcellularsystems

We consider an urban fiber-optic microcellular system in which a cigar-shaped cell consists of several microzones with their own antenna sites connected to a central station through optical fibers. To increase the efficiency of radio resources and reduce unnecessary handoffs between microzones, we propose a movable safety zone scheme. A safety zone is a virtually guarded area that does not permit cochannel interference. Outside the safety zone, cochannels can be reused. The safety zone can move under the condition that its user does not meet cochannel interference as he moves to an adjacent microzone. Considering user mobility characteristics in the cigar-shaped cell, we analyze and evaluate the proposed system in terms of intracell and intercell handoff rates, blocking probability, intracell call-dropping probability, and channel reuse parameter. The proposed system can handle a traffic capacity of about 12 Erlangs for seven traffic channels under a call blocking probability of 1% and generates a negligible number of intracell handoffs compared with those of intercell handoffs     

Improvement of P-channel SOI LDMOS transistor by adapting a newtapered oxide technique

On-resistance of P-channel REduced SURface Field (RESURF) lateral double-diffused MOS (LDMOS) transistors has been improved by using a new tapered TEOS field oxide on the drift region of the devices. The new tapered oxidation technique provides better uniformity, less than 3%, and reproducibility. With the similar breakdown voltage (V_B), at V_gs=-5.0 V, the specific on-resistance (R_sp) of the LDMOS with the tapered field oxide is about 31.5 mΩ·cm ², while that of the LDMOS with the conventional field oxide is about R_sp=57 mΩ·cm². The uniformities of R_sp and V_B are less than 5 and 3%, respectively