The correlation between the ionic degree of covalent bond comprising polymer main chain and the ionic yield due to mechanical fracture

The mechanical force to polymeric materials in vacuum at 77 K produces mechano radicals, mechano anions and mechano cations due to homogeneous and heterogeneous scissions of the covalent bonds comprising polymer main chain. The ionic degree of the covalent bond was estimated by calculating the “absolute ΔMulliken atomic charge,” which was defined as the difference between the Mulliken atomic charges of the two adjacent atoms comprising the covalent bond of the polymer main chain. The ionic yield of the covalent bond increased with increasing the absolute ΔMulliken atomic charge. The empirical formula for the ionic yield was obtained with the absolute ΔMulliken atomic charge, and indicates that the ionic yield could be estimated from its chemical structure.     

Glucose Production from Maltohexaose as a Substrate by the Bacterial Alpha-amylase-catalyzed Reaction. Its Time Courses Obtained by a Theoretical and an Experimental Approaches

Based on the subsite structure of an α-amylase from Bacillus subtilis, production of glucose from a substrate maltohexaose in the amylase-catalyzed reaction was theoretically predicted as a function of time. The theoretical time course was found consistent with the experimental results, which were obtained by the determination of a product glucose with a commercial assay-kit. Hence, glucose, product from a substrate maltohexaose, will be a useful probe for the amylase-catalyzed reaction.     

An Enzymatic Assay Method for Bacterial Alpha-amylase Using a Glucose Determination-kit and Maltohexaose as the Substrate

Using maltohexaose G₆ as a substrate, a convenient analytical method for amylase-catalyzed hydrolytic reaction was developed by application of an enzymatic assay-kit (glucose oxidase-peroxidase) to measurement of glucose, produced on the reaction: G₆→G₅ + G. The initial velocity was confirmed to be proportional to the initial concentration of amylase, examined, ∼ 100 μm. The new method was found in a good correlation with the Nelson and Somogyi method. Rate assay was also examined: The initial velocity is proportional to the enzyme concentration, ∼ 30 μm. Hence, this enzymatic assay method is recognized to be convenient and useful for the measurement of α-amylase.     

Oxidation kinetics for <Emphasis Type="Italic">cis</Emphasis>-9,<Emphasis Type="Italic">trans</Emphasis>-11 and <Emphasis Type="Italic">trans</Emphasis>-10,<Emphasis Type="Italic">cis</Emphasis>-12 isomers of CLA

The autoxidation processes of the cis-9,trans-11 (c9,t11) and trans-10,cis-12 (t10,c12) isomers of CLA were separately observed at ca. 0% RH and different temperatures. The t10,c12 CLA oxidized faster than the c9,t11 isomer at all tested temperatures. The first half of the oxidation process of t10,c12 CLA obeyed an autocatalytic-type rate expression, but the latter half followed first-order kinetics. On the other hand, the entire oxidation process of c9,t11 CLA could be expressed by the autocatalytic-type rate expression. The apparent activation energies and frequency factors for the autoxidation of the isomers were estimated from the rate constants obtained at various temperatures based on the Arrhenius equation. The apparent activation energies for the CLA isomers were greater than those for the nonconjugated n−6 and n−3 PUFA or their esters. However, the enthalpyentropy compensation held during the autoxidation of both the CLA and PUFA. This suggested that the autoxidation mechanisms for the CLA and PUFA were essentially the same.     

Novel High‐Temperature Antiferroelectric‐Based Dielectric NaNbO3–NaTaO3 Solid Solutions Processed in Low Oxygen Partial Pressures

The (1?x)NaNbO₃–(x)NaTaO₃ solid solution was investigated for x ≤ 0.4 in terms of new high‐temperature and high‐permittivity dielectric system that is suitable for base metal inner electrode capacitor applications. The addition of Ta significantly enhanced the resistivity of the dielectric, resulting in superior resistivity than the dielectrics‐formulated BaTiO₃ systems that dominate the multilayer ceramic capacitor dielectric devices. The voltage dependence of the permittivity was also superior to BaTiO₃‐based materials, providing higher capacitance at higher temperatures. A transmission electron microscopy study illustrated that the grains had so‐called core‐shell structure. According to the electron diffraction analysis, the core region had an inhomogeneous structure between antiferroelectric and ferroelectric phases, and shell region had an incommensurate ferroelectric‐like structure. The core and shell region had Nb‐ and Ta‐rich composition, respectively, and their interface was compositionally sharp, implying that shell region was formed via a liquid phase during the sintering process with an incongruent Ta dissolution reprecipitation. We anticipate that these or similar materials based on the alkali‐niobate perovskites can be further enhanced to provide capacitor solutions from 150°C to 250°C, which is an important range for a number of new AC–DC invertor and engine control units.     

Synthesis and characterization of propylene‐α‐olefin random copolymers with isotactic propylene sequence. II. Propylene–hexene‐1 random copolymers

A series of novel hexene‐1–propylene random copolymers with isotactic sequence of propylene was synthesized with a MgCl₂‐supported Cr(acac)₃ catalyst. The molecular weight distribution of copolymers and homopolymers was considerably narrower than that of typical polyolefins produced by heterogeneous Ziegler–Natta catalysts. The crystallizability of the copolymers having a propylene‐unit content of more than 50 mol % drastically decreased with decreasing propylene‐unit content, and the copolymers with a propylene content of less than 50 mol % were completely amorphous. In the present novel type of random copolymers with crystallizable and noncrystallizable units, a single glass transition was observed between pure polypropylene and polyhexene‐1, and a major component was found to govern the final morphology and the mechanical characteristics. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 92: 2949–2954, 2004     

High tensile strength fiber of poly[(R)‐3‐hydroxybutyrate‐co‐(R)‐3‐hydroxyhexanoate] processed by two‐step drawing with intermediate annealing

High tensile strength fibers of poly[(R)‐3‐hydroxybutyrate‐co‐(R)‐3‐hydroxyhexanoate] [P(3HB‐co‐3HH)], a type of microbial polyesters, were processed by one‐step and two‐step cold‐drawn method with intermediate annealing. Thermal degradation behaviors were characterized by differential scanning calorimeter and gel permeation chromatography measurements. Thermal analyses were revealed that molecular weights decreased drastically within melting time at a few minute. One‐step cold‐drawn fiber with drawing ratio of 10 showed tensile strength of 281 MPa, while tensile strength of as‐spun fiber was 78 MPa. When two‐step drawing was applied for P(3HB‐co‐3HH) fibers, the tensile strength was led to 420 MPa. Furthermore, the optimization of intermediate annealing condition leads to enhance the tensile strength at 552 MPa of P(3HB‐co‐3HH) fiber. Wide‐angel X‐ray diffraction measurements of these fibers suggest that the fibers with high tensile strength include much amount of the planer‐zigzag conformation (β‐form) as molecular conformation together with 2₁ helix conformation (α‐form). © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41258.     

High performance double-doped InAlAs/InGaAs/InP heterojunction FET with potential for millimetre-wave power applications

Lattice matched InAlAs/InGaAs/InP heterojunction field-effect transistors (HJFETs), which have carrier supplying layers on and beneath the undoped InGaAs channel layer, have been successfully fabricated. A selective recess of the InGaAs channel edge at a mesa sidewall together with the use of a wide recess gate structure leads to a 5.7 V gate-drain breakdown voltage without kink effects. The fabricated HJFET with a 0.15*100 mu m/sup 2/ T-shaped gate exhibits a 700 mA/mm maximum drain current, a voltage gain of 14, and a 345 GHz maximum frequency of oscillation.<>