Frequency selective millimeter‐wave channel estimation based on subspace enhancement algorithms

In millimeter wave (mmW) communication systems, hybrid architecture, including the analog‐digital precoder and combiner matrices, is employed to take advantage of the multistream transceiver. In practice, mmW channel is assumed to be frequency‐selective, since the signal bandwidth is larger than the coherence bandwidth. Hence, orthogonal frequency‐division multiplexing signaling can be remedial. So far, most of the previous works on the frequency‐selective channel estimation have focused on the single measurement vector (SMV) form, whereas finding and exploiting the proper multimeasurement vector (MMV) model can improve upon the estimation procedure based on compressive sensing (CS) concepts. In fact, the estimation procedure based on the MMV model has a faster convergence speed than the SMV method specially, when the training frames are small. In this paper, we first extract the MMV model of the channel. In this model, the rank‐deficiency occurs as the number of training frames is less or equal to the sparsity level. Thus, the conventional estimation methods fail to provide the desirable performance. To overcome this issue, we propose two rank‐aware algorithms based on the enhancement of the observed signal subspace. The first algorithm assumes to know the sparsity level, while the second faces to the lack of knowledge about the sparsity level. The simulation results corroborate the fact that the proposed methods outperform the conventional CS algorithms such as Simultaneous Orthogonal Matching Pursuit.     

Origin of High Ionic Conductivity of Sc-Doped Sodium-Rich NASICON Solid-State Electrolytes

Substitution of liquid electrolyte with solid-state electrolytes (SSEs) has emerged as a very urgent and challenging research area of rechargeable batteries. NASICON (Na₃Zr₂Si₂PO₁₂) is one of the most potential SSEs for Na-ion batteries due to its high ionic conductivity and low thermal expansion. It is proven that the ionic conductivity of NASICON can be improved to 10⁻³ S cm⁻¹ by Sc-doping, of which the mechanism, however, has not been fully understood. Herein, a series of Na_3+xSc_xZr_2−xSi₂PO₁₂ (0 ≤ x  ≤  0.5) SSEs are prepared. To gain a deep insight into the ion transportation mechanism, synchrotron-based X-ray absorption spectroscopy (XAS) is employed to characterize the electronic structure, and solid-state nuclear magnetic resonance (SS-NMR) is used to analyze the dynamics. In this study, Sc is successfully doped into Na₃Zr₂Si₂PO₁₂ to substitute Zr atoms. The redistribution of sodium ions at certain specific sites is proven to be critical for sodium ion movement. For x ≤ 0.3, the promotion of sodium ion movement is attributed to sodium ion concentration increase at the Na2 sites and decrease at the Na1 and Na3 sites. For x > 0.3, the inhibition of sodium ion movement is due to the phase change from monoclinic to rhombohedral and an increasing impurity content.     

Voltage difference engineering in SOI MOSFETs: A novel side gate device with improved electrical performance

We studied the impact of voltage difference engineering in a silicon-on-insulator metal oxide semiconductor field-effect transistor (SOI-MOSFET) and compared the performance to that of a conventional SOI-MOSFET (C-SOI). Our structure, called a SIG-SOI MOSFET, includes main and side gates with an optimum voltage difference between them. The voltage difference leads to an inverted channel as an electrical drain extension under the side gate. This channel creates a stepped potential distribution along the channel that it cannot be seen in the C-SOI MOSFETs. The voltage difference controls the channel properly and two-dimensional two-carrier device simulations revealed lower threshold voltage variations, larger breakdown voltage, higher voltage gain, lower hot carrier effects, improved drain-induced barrier lowering, lower drain conductance, higher unilateral power gain, and lower leakage current compared to a C-SOI device. Thus, our proposed structure has higher performance than a typical C-SOI structure.     

High-Performance Mixed-Mode Universal Min-Max Circuits for Nanotechnology

In this paper a low-power, high-speed and high-resolution voltage-mode Min-Max circuit, as well as a new efficient universal structure for determining the minimum and maximum values of the input digital signals, is proposed for nanotechnology. In addition, the proposed designs provide rail-to-rail input and output signals which enhance the performance and the robustness of the circuits. The advantage of the proposed Min-Max circuit is that it is extendable for any arbitrary n-digit and radix-r input numbers. Comprehensive simulation results at CMOS and CNFET technologies demonstrate the low-power and high-performance operation as well as insusceptibility to PVT variations of the proposed structure.     

Utility-based adaptive radio resource allocation in OFDM wireless networks with traffic prioritization

In this letter, a joint transmit scheduling and dynamic sub-carrier and power allocation method is proposed to exploit multi-user diversity in downlink packet transmission in an OFDM wireless network with mixed real-time and non-real-time traffic patterns. To balance efficiency and fairness and to satisfy the QoS requirements of real-time users, we utilize a utility-based framework and propose a polynomial-time heuristic algorithm to solve the formulated optimization problem. The distinguishing feature of the proposed method is that it gives in one shot, the transmission scheduling, the sub-carriers assigned to each user, and the power allocated to each sub-carrier, based on a fair and efficient framework while satisfying the delay requirements of real-time users.     

A wide frequency range delay line for fast-locking and low power delay-locked-loops

A voltage controlled delay cell with wide frequency range is presented in this paper. The delay-line which is resulted by connecting five series of delay cells generating a wide range of delay from 1.9 to 13.24 ns. It can be used in an analog delay locked loop. The linear characteristic of the circuit with respect to the conventional delay line structures is improved, and a better performance of noise is obtained using differential structure. This circuit is designed by ADS software and TSMC CMOS 0.18 μm technology, with supply voltage 1.8 V. By changing control voltage from 0.335 to 1.8 V in delay line, a wide range of frequency from 75.52 to 917.43 MHz will be covered. Simulation results show that the proposed delay line has power consumption of maximum 3.77 mW at frequency of 75.52 MHz. It also shows that increasing of frequency will reduce power dissipation which is the one of the main characteristics of this novel circuit. Moreover, the delay locked loop which uses these delay cells has a very high lock speed so that the maximum lock time in just five clock cycles.     

Retarding Thermal Degradation in Hybrid Perovskites by Ionic Liquid Additives

Recent years have witnessed considerable progress in the development of solar cells based on lead halide perovskite materials. However, their intrinsic instability remains a limitation. In this context, the interplay between the thermal degradation and the hydrophobicity of perovskite materials is investigated. To this end, the salt 1‐(4‐ethenylbenzyl)‐3‐(3,3,4,4,5,5,6,6,7,7,8,8,8‐tridecafluorooctylimidazolium iodide (ETI), is employed as an additive in hybrid perovskites, endowing the photoactive materials with high thermal stability and hydrophobicity. The ETI additive inhibits methylammonium (MA) permeation in methylammonium lead triiodide (MAPbI₃) occurring due to intrinsic thermal degradation, by inhibiting out‐diffusion of the MA⁺ cation, preserving the pristine material and preventing decomposition. With this simple approach, high efficiency solar cells based on the unstable MAPbI₃ perovskite are markedly stabilized under maximum power point tracking, leading to greater than twice the preserved efficiency after 700 h of continuous light illumination and heating (60 °C). These results suggest a strategy to tackle the intrinsic thermal decomposition of MAI, an essential component in all state‐of‐the‐art perovskite compositions.     

Coplanar Waveguide Fed Printed Antenna with Compact Size for Broadband Wireless Applications

A novel and simple coplanar waveguide fed compact antenna is introduced in this paper. The antenna structure combines the advantages of CPW with those of the broadband antenna and simplifies the structure of the antenna by reducing the number of metallization level to construct uni-planar antenna. Prototype of the proposed antenna have been constructed and studied experimentally. The measured results agrees well with the simulated prediction and shows a broad bandwidth of 6 GHz ranging from 3.5 GHz to 9.5 GHz with VSWR ≤2 (return loss ≤−10 dB), which is equivalent to 92.3% impedance bandwidth centered at 6.5 GHz. The proposed antenna shows stable radiation characteristics, gain and axial ratio of less than 1 dB over the whole operating bandwidth. Furthermore, an extensive parametric study was performed to realize the relationship between the resonance frequencies of the broadband antennas and different parameters which is helpful for advancement of the antenna design.