Progress on large area n‐type silicon solar cells with front laser doping and a rear emitter

We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al₂O₃, 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm² Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd.     

Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys

Epitaxial heterostructures produced by MOCVD on the basis of Al _x Ga_{1 ? x} As ternary alloys with the composition parameter x ≈ 0.20–0.50 and doped to a high Si and P atomic content are studied. Using the high-resolution X-ray diffraction technique, scanning electron microscopy, X-ray microanalysis, Raman spectroscopy, and photoluminescence spectroscopy, it is shown that the epitaxial films grown by MOCVD are formed of five-component (Al _x Ga_{1 ? x} As_{1 ? y} P _y )_{1 ? z} Si _z alloys.     

Moisture Sensitive Smart Yarns and Textiles from Self‐Balanced Silk Fiber Muscles

Smart textiles that sense, interact, and adapt to environmental stimuli have provided exciting new opportunities for a variety of applications. However, current advances have largely remained at the research stage due to the high cost, complexity of manufacturing, and uncomfortableness of environment‐sensitive materials. In contrast, natural textile materials are more attractive for smart textiles due to their merits in terms of low cost and comfortability. Here, water fog and humidity‐driven torsional and tensile actuation of thermally set twisted, coiled, plied silk fibers, and weave textiles from these silk fibers are reported. When exposed to water fog, the torsional silk fiber provides a fully reversible torsional stroke of 547° mm^?1. Coiled‐and‐thermoset silk yarns provide a 70% contraction when the relative humidity is changed from 20% to 80%. Such an excellent actuation behavior originates from water absorption‐induced loss of hydrogen bonds within the silk proteins and the associated structural transformation, which are corroborated by atomistic and macroscopic characterization of silk and molecular dynamics simulations. With its large abundance, cost‐effectiveness, and comfortability for wearing, the silk muscles will open up additional possibilities in industrial applications, such as smart textiles and soft robotics.     

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm² V^?1 s^?1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □^?1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In₂O₃) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm^?2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.     

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

Buried‐channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10⁵ cm² V^?1 s^?1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top‐gate of a dopant‐less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10¹¹cm^?2, light effective mass (0.09m_e), and high effective g‐factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low‐disorder material platform for hybrid quantum technologies.     

High-yield flip-chip bonding and packaging of low-threshold VCSEL arrays on sapphire substrates

Oxide-confined top-emitting 850 nm and bottom-emitting 980 nm vertical-cavity surface-emitting laser (VCSEL) 8/spl times/8 arrays were designed and fabricated for applications of optical interconnects. The arrays were flip-chip bonded onto sapphire substrates that contain complimentary metal-oxide-semiconductor (CMOS) driver and fan-out circuitries. The off-sited bonding contacts and minimized bonding force produced very high yield of the hybridization process without causing damage to the VCSEL mesas. The hybridized devices were further mounted either on printed circuit board (PCB) or in 68-pin pin-grid-array (PGA) packages. The transparent sapphire substrate allowed optical outputs from the top-emitting VCSEL arrays to transmit directly through without additional substrate removal procedure. Lasing thresholds below 250 /spl mu/A for 850 nm VCSELs and 800 /spl mu/A for 980 nm VCSEL were found at room temperature. The oxide confinement apertures of VCSELs were measured to be around 6 /spl mu/m in diameter. High-speed data transmission demonstrated a bandwidth of up to 1 Gbits/s per channel for these hybridized VCSEL transmitters.     

Nanogeometry matters: unexpected decrease of capillary adhesion forces with increasing relative humidity

The sticking effect between hydrophilic surfaces occurring at increasing relative humidity (RH) is an everyday phenomenon with uncountable implications. Here experimental evidence is presented for a counterintuitive monotonous decrease of the capillary adhesion forces between hydrophilic surfaces with increasing RH for the whole humidity range. It is shown that this unexpected result is related to the actual shape of the asperity at the nanometer scale: a model based on macroscopic thermodynamics predicts this decrease in the adhesion force for a sharp object ending in an almost flat nanometer-sized apex, in full agreement with experiments. This anomalous decrease is due to the fact that a significant growth of the liquid meniscus formed at the contact region with increasing humidity is hindered for this geometry. These results are relevant in the analysis of the dynamical behavior of nanomenisci. They could also have an outstanding value in technological applications, since the undesirable sticking effect between surfaces occurring at increasing RH could be avoided by controlling the shape of the surface asperities at the nanometric scale.     

The Molecular Basis and Pathophysiology of Trigeminal Neuralgia

Trigeminal neuralgia (TN) is a complex orofacial pain syndrome characterized by the paroxysmal onset of pain attacks in the trigeminal distribution. The underlying mechanism for this debilitating condition is still not clearly understood. Decades of basic and clinical evidence support the demyelination hypothesis, where demyelination along the trigeminal afferent pathway is a major driver for TN pathogenesis and pathophysiology. Such pathological demyelination can be triggered by physical compression of the trigeminal ganglion or another primary demyelinating disease, such as multiple sclerosis. Further examination of TN patients and animal models has revealed significant molecular changes, channelopathies, and electrophysiological abnormalities in the affected trigeminal nerve. Interestingly, recent electrophysiological recordings and advanced functional neuroimaging data have shed new light on the global structural changes and the altered connectivity in the central pain-related circuits in TN patients. The current article aims to review the latest findings on the pathophysiology of TN and cross-examining them with the current surgical and pharmacologic management for TN patients. Understanding the underlying biology of TN could help scientists and clinicians to identify novel targets and improve treatments for this complex, debilitating disease.