Studies on administration of cephalothin sodium after open heart surgery (author's transl)

Critical cardiac contamination may occur during extracorporeal circulation in open heart surgery. Prophylactic administration of cephalothin sodium (CET) was studied for their safe and adequate serum concentration after open heart surgery in infants and adults. Methods of administration of CET were discussed for infants and adults.     

Novel method for producing amorphous rice flours by milling without adding water

The present study investigated a novel milling method for producing amorphous rice starch without adding water. A new type of milling machine was developed (termed the shear and heat milling machine (SHMM)), which is capable of applying mechanical shear and heat during the milling process. The SHMM consisted of a pair of rice mortars attached to a servomotor and a ring heater. The heater was installed on the upper mortar; the temperature of the upper mortar was monitored and controlled by a thermal controller. Wide‐angle X‐ray diffraction (WAXD) analysis was used to determine the crystallinities of starch in rice flour samples produced using the SHMM at different milling temperatures. The WAXD data for milled rice flour that had been heated exhibited no diffraction peaks. This experimental result demonstrates that the developed SHMM produces amorphous rice starch easily by milling with heating without the addition of water. The milling conditions such as the shear and heat applied can be used to control the crystallinity of starch in rice.     

Tunable Continuous-Wave Yb:YLF Laser Operation with a Diode-Pumped Chirped-Pulse Amplification System

We have demonstrated a diode-pumped Yb:LiYF(4) (Yb:YLF) laser oscillator for the first time to our knowledge. A wide tuning range of 25 nm and a high slope efficiency of 50% were obtained at a high laser-diode pump intensity of 100 kW/cm(2). Emission and absorption spectra of the Yb:YLF crystal at 8 K represent a wide laser gain width of 38 nm, indicating efficient laser operation similar to that of a four-level laser system with a reduced saturation fluence of 11 J/cm(2).     

Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent

Pb(Zr, Ti)O₃ thin films were grown on 8-inch Ir(111)/SiO₂/Si substrate by a MOCVD system aiming at application utilizing high-density ferroelectric memory (FRAM). Two types of solvents, THF and cyclohexane were used for liquid source delivery. It was found that the ferroelectric properties of the MOCVD-PZT films using cyclohexane solvent were better than them using THF solvent. By choosing cyclohexane as solvent, the MOCVD-PZT thin films showed strong ?111? preferred orientation and the Pt/PZT/Ir capacitors exhibited promising ferroelectric performances, for instance, large switching charge (Qsw) of 56.4 uC/cm².     

Improvement of hardness of MOS capacitors to electron-beamirradiation and hot-electron injection by ultradry oxidation of silicon

The sensitivity to electron-beam-induced damage and to hot-electron-induced damage of metal/SiO₂/Si capacitors has been improved by using ultradry oxide. The ultradry oxide was grown in a double-walled quartz furnace in which water concentration was reduced to less than 1 p.p.m. The interface trap generation in ultradry MOS capacitors due to electron beams is nearly one order of magnitude smaller than that in conventional dry MOS capacitors. Interface trap generation in ultradry MOS capacitors caused by hot electrons is half of that in dry MOS capacitors     

Drivability improvement on deep-submicron MOSFETs by elevation ofsource/drain regions

Deep submicron MOSFETs with elevated source/drain (S/D) structures, where S/D extension regions were partially elevated besides deep S/D regions, were fabricated by use of Si selective epitaxial growth technique. As fairly compared with a well-developed conventional MOSFET, we clarify an advantage of the elevated S/D structures, i.e., improvement upon driving performance with keeping excellent short-channel characteristics, which is enhanced for decrease in gate sidewall spacer width. The experimental results are explained in terms of the reduction in S/D parasitic resistance by addition of the Si epitaxial layer where the impurity profile is suitable     

A variational principle for minimizing experimental measurement errors and its application to a hybrid experimental-numerical method

In general, experimentally measured fields such as moiré-interferometry fringes contain various errors associated with the measurement and subsequent data analysis. Moreover, the measured displacement field does not necessarily satisfy the equilibrium equation in solid mechanics, especially when the measurement errors are involved. First, a variational principle minimizing the experimental measurement errors is derived to overcome such difficulties. Next, on the basis of this variational principle, a new hybrid moiré-interferometry and finite-element method is developed. Concepts of restoration energy and restoration force are also presented in the context of the present hybrid method. The present hybrid method demonstrates automatic detection and elimination of the measurement errors and smooth visualization of stress contours. The present hybrid method automatically achieves the path independence of the J integral, restoring the path-dependence caused by the measurement errors.     

Ohmic contacts to Si-implanted InP

Ohmic contacts to Si-implanted, n⁺ layers on semi-insulating InP are investigated on the basis of the transmission line model. It is found that Au/Ni/AuGeNi/InP system shows a good ohmic behaviour with the specific contact resistance $\text{ρ}{}_{\mathrm{c}}\text{of}\text{2 × 10}{}^{\mathrm{?5}}\text{Ω}\text{cm}{}^2$ and the minimum contact resistance $\text{Z}{}_{\mathrm{c}}\text{of}\text{～ 2 × 10}{}^{\mathrm{?3}}\text{Ω}\text{cm}$ for a Si-dose higher than 2 × 10¹⁴ cm^?2 at 100 or 200 keV. The results indicate that, in the FET fabrication, at least 120 μm in length is necessary in order to obtain source and drain electrodes with the minimized resistance.     

High-gain GaAs avalanche photodiodes with proton-implanted guard ring

A GaAs avalanche photodiode with a multiplication factor as high as 8000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer.