The effects of bath composition on the morphologies of electroless nickel under-bump metallurgy on Al input/output pad

The electroless nickel plating on an aluminum input/output (I/O) pad was investigated. The aluminum pad was pretreated in a zincate solution prior to electroless nickel plating. Zinc particles on the aluminum pad gave a good adherent nickel layer. The adhesion and uniformity of zinc on the aluminum is the key factor in under-bump metallurgy (UBM). The electrode potential changes with and without zinc ions in the bath were measured to analyze the sequence of two competing reactions: zinc deposit and hydrogen evolution. The relationship between aluminum dissolution and the ratio of zinc and NaOH was investigated. The electroless nickel deposition rate was dependent on bath composition. The effects of complexing ligand and additive on the nickel deposit were analyzed. Electrode potential changes were measured with time to confirm nucleation and grain growth. Adhesion of the UBM was related to zinc-particle dissolution and nickel nucleation. The uniform nickel UBM was fabricated on a real Al I/O pad.     

Adaptive Kernel Function of SVM for Improving Speech/Music Classification of 3GPP2 SMV

Because a wide variety of multimedia services are provided through personal wireless communication devices, the demand for efficient bandwidth utilization becomes stronger. This demand naturally results in the introduction of the variable bitrate speech coding concept. One exemplary work is the selectable mode vocoder (SMV) that supports speech/music classification. However, because it has severe limitations in its classification performance, a couple of works to improve speech/music classification by introducing support vector machines (SVMs) have been proposed. While these approaches significantly improved classification accuracy, they did not consider correlations commonly found in speech and music frames. In this paper, we propose a novel and orthogonal approach to improve the speech/music classification of SMV codec by adaptively tuning SVMs based on interframe correlations. According to the experimental results, the proposed algorithm yields improved results in classifying speech and music within the SMV framework.     

Extraction and Regularization of Various Building Boundaries with Complex Shapes Utilizing Distribution Characteristics of Airborne LIDAR Points

This study presents an approach for extracting boundaries of various buildings, which have concave boundaries, inner yards, non‐right‐angled corners, and nonlinear edges. The approach comprises four steps: building point segmentation, boundary tracing, boundary grouping, and regularization. In the second and third steps, conventional algorithms are improved for more accurate boundary extraction, and in the final step, a new algorithm is presented to extract nonlinear edges. The unique characteristics of airborne light detection and ranging (LIDAR) data are considered in some steps. The performance and practicality of the presented algorithm were evaluated for buildings of various shapes, and the average omission and commission error of building polygon areas were 0.038 and 0.033, respectively     

GPS‐Based Orbit Determination for KOMPSAT‐5 Satellite

Korea Multi‐Purpose Satellite‐5 (KOMPSAT‐5) is the first satellite in Korea that provides 1 m resolution synthetic aperture radar (SAR) images. Precise orbit determination (POD) using a dual‐frequency IGOR receiver data is performed to conduct high‐resolution SAR images. We suggest orbit determination strategies based on a differential GPS technique. Double‐differenced phase observations are sampled every 30 seconds. A dynamic model approach using an estimation of general empirical acceleration every 6 minutes through a batch least‐squares estimator is applied. The orbit accuracy is validated using real data from GRACE and KOMPSAT‐2 as well as simulated KOMPSAT‐5 data. The POD results using GRACE satellite are adjusted through satellite laser ranging data and compared with publicly available reference orbit data. Operational orbit determination satisfies 5 m root sum square (RSS) in one sigma, and POD meets the orbit accuracy requirements of less than 20 cm and 0.003 cm/s RSS in position and velocity, respectively.     

A high-yield fabrication process for silicon neural probes

There is a great need for silicon microelectrodes that can simultaneously monitor the activity of many neurons in the brain. However, one of the existing processes for fabricating silicon microelectrodes-reactive-ion etching in combination with anisotropic KOH etching-breaks down at the wet-etching step for device release. Here we describe a modified wet-etching sidewall-protection technique for the high-yield fabrication of well-defined silicon probe structures, using a Teflon shield and low-pressure chemical vapor deposition (LPCVD) silicon nitride. In the proposed method, a micro-tab holds each individual probe to the central scaffold, allowing uniform anisotropic KOH etching. Using this approach, we obtained a well-defined probe structure without device loss during the wet-etching process. This simple method yielded more accurate fabrication and an improved mechanical profile.     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Photocurable propyl-cinnamate-functionalized polyhedral oligomeric silsesquioxane as a gate dielectric for organic thin film transistors

A polyhedral oligomeric silsesquioxane (POSS)-based insulating material with photocurable propyl-cinnamate groups (POSS-CYNNAM) was designed and synthesized through simple single step reaction for use as a gate dielectric in organic thin-film transistors (OTFT). POSS-CYNNAM was soluble in common organic solvents and formed a smooth thin film after spin-casting. A thin film of POSS-CYNNAM was cross-linked and completely solidified under UV irradiation without the use of additives such as photoacid generators or photoradical initiators. ITO/insulator/Au devices were fabricated and characterized to measure the dielectric properties of POSS-CYNNAM thin films, such as leakage current and capacitance. A pentacene-based OTFT using the synthesized insulator as the gate dielectric layer was fabricated on the transparent indium tin oxide (ITO) electrode, and its performance was compared to OTFTs using thermally cross-linked poly(vinyl phenol) (PVP) as the insulator. The fabricated POSS-CYNNAM OTFT showed a comparable performance to devices based on the PVP insulator with 0.1 cm²/Vs of the field effect mobility and 4.2 × 10⁵ of an on/off ratio.     

High-performance polymer light emitting diodes with interface-engineered graphene anodes

Recently, graphene-based organic light emitting diodes (OLEDs) were successfully demonstrated using graphene as anodes. However, the graphene electrodes have not been utilized for polymer light emitting diodes (PLEDs) yet, although the simpler device structure and the solution-based fabrication process of PLEDs are expected to be more advantageous in terms of time and cost. Here we demonstrate high-performance polymer light emitting diodes (PLEDs) with simple two-layer structures using interface-engineered single-layer graphene films as anodes. The single-layer graphene synthesized by chemical vapor deposition methods was transferred onto a glass substrate utilizing an elastic stamp, and its work function was engineered by varying the duration and the power of ultraviolet ozone (UVO) treatment. Thus, we were able to optimize the contact between silver electrodes and the graphene anodes, leading to the considerable enhancement of light-emitting performance.