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11.
逆向工程技术在机械领域的应用 总被引:2,自引:0,他引:2
逆向工程技术已成为联系新产品开发过程中各种先进技术的纽带,并成为实现新产品快速开发的重要技术手段.介绍了逆向工程的概念、技术流程、测量系统、常用软件以及实际应用. 相似文献
12.
Youngmo Han 《IEEE transactions on systems, man, and cybernetics. Part A, Systems and humans : a publication of the IEEE Systems, Man, and Cybernetics Society》2007,37(6):854-863
This paper is about gaze control in active vision. The problem to tackle is, given a camera imaging a particular 3-D point, to place the 3-D point at the center of the image by rotating the camera about its own optical center. For separating this procedure from structure estimation, we use a normalized camera coordinate system, which leads to formulation defined on the unit sphere. In designing the algorithm, we try to avoid the disadvantages of local coordinates or approximation. For this purpose, we design the algorithm by considering the intrinsic geometric properties of the underlying space, not using any kinds of parameterization or approximation. The proposed algorithm is simple and of a closed form, and that makes it suitable for real-time application. 相似文献
13.
On Ultra-Fine Leak Detection of Hermetic Wafer Level Packages 总被引:1,自引:0,他引:1
Theoretical and practical ranges of leak rates measurable by the helium mass spectrometer are characterized. The effect of noise due to: 1) background helium present in the spectrometer and 2) desorption of helium that attaches itself to the specimen surface during bombing is quantified experimentally. The results guide a framework to extract the true leak rate from the measured leak rate profile. An optical interferometry based hermeticity measurement technique for ultra-fine leaks is proposed. The setup to implement the technique is described and a preliminary experimental result is reported. 相似文献
14.
Bin Xie Shi X.Q. Han Ding 《Components and Packaging Technologies, IEEE Transactions on》2008,31(2):361-369
In an anisotropic conductive adhesive (ACA) assembly, the electrical conduction is usually achieved with the conductive particles between the bumps of integrated circuit (IC) and corresponding conductive tracks on the glass substrate. Fully understanding of the mechanical and electrical characteristics of ACA particles can help to optimize the assembly process and improve the reliability of ACA interconnection. Most conductive particles used in the ACA assembly are with cracks in the metal coating of the particles after the ACA bonding. This paper introduced the fracture analysis by applying the cohesive elements in the numerical model of the nickel-coated polymer particle and further simulating the cracks initiation and propagation in the nickel coating during the ACA bonding. The simulation results showed that the stress distribution on the nickel-coated particle with cracks was significantly different from that on the nickel-coated particle without crack, indicating that the stress analysis by taking the crack into consideration is very important for the reliability assessment of the ACA interconnection. The stress analysis of cohesive elements indicated that the cracks initiated at the central area of the nickel coating and propagated to the polar area. Furthermore, by the introduction of a new parameter of the virtual resistance, a mathematical model was established to describe the electrical characteristics of the nickel-coated particle with cracks. The particle resistance of the nickel-coated particle with cracks was found to be much higher than that of the particle without crack in the optimized bonding pressure range, indicating that it is necessary to take the crack into consideration for the particle conduction analysis as well. Therefore, the fracture analysis on the conductive particle by taking the crack into consideration could accurately evaluate the reliability of ACA interconnection and avoid serious reliability issues. 相似文献
15.
Cheol-Min Park Byung-Hyuk Min Jae-Hong Jun Juhn-Suk Yoo Min-Koo Han 《Electron Device Letters, IEEE》1997,18(1):16-18
We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained 相似文献
16.
Motoharu Fujigaki In Hong Yang Yoshiharu Morimoto Eung Kyo Han 《NDT & E International》1996,29(4):197-203
There is no good method to measure the shape and the strain distributions of a structure changing with time. We have previously proposed the Fourier transform grid method (FTGM) to measure the three-dimensional shape and surface strain distributions of stationary objects by analysing the two-dimensional grating images recorded with two cameras. In the stereoscopic method, it is very important to determine the accurate geometric parameters of the camera system. In this paper, the positions and the directions of cameras are accurately determined using the FTGM applied to images of a reference object on which a two-dimensional grating is drawn. Applications for analysing shape and strain distributions of vibrating rubber plates and a moving human skin are shown. 相似文献
17.
18.
部分种子成分的特征X射线在等效生物材料中衰减的测定 总被引:6,自引:5,他引:1
用Si(Li)探测器实现了Na、Mg、S、Cl的特征X射线在有机膜中的相对衰减以及与O、K元素的特征X射线能量相当的X射线或轫致辐射在有机膜中的相对衰减,分别得出了它们减的数学描述,并把实验得到不同能量的X射线在有机膜中的质量吸收系数与Berkeley的OCG软件计算出的结果相比,相关都小于30%。 相似文献
19.
20.
Assaderaghi F. Chen J. Solomon R. Chian T.-Y. Ko P.K. Hu C. 《Electron Device Letters, IEEE》1991,12(10):518-520
It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested 相似文献